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  • 1
    Electronic Resource
    Electronic Resource
    Reactions of chlorine with liquid metals. 2. Lead (1984)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 88 (1984), S. 3529-3531 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150660a030
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  • 2
    Electronic Resource
    Electronic Resource
    Reactions of chlorine with liquid metals. 1. Indium (1984)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 88 (1984), S. 3521-3528 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150660a029
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  • 3
    Electronic Resource
    Electronic Resource
    Surface mobility of C60 on SiO2 (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 4855-4859 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The interaction of a collisionless beam of thermal C60 nanoclusters with a silicon dioxide surface has been investigated with modulated molecular beam-mass spectroscopic techniques. Analysis of the amplitude and phase lag of the desorbed C60 shows the interaction mechanism to involve the elementary steps of sticking, desorption, and long-range surface diffusion. Surface diffusion coefficients determined in this measurement indicate that surface C60 nanoclusters approach two-dimensional gas-like behavior. The sticking probability of C60 clusters on SiO2 is determined to be unity. The best fit desorption rate constant kd for C60 from SiO2 is 5×1010 exp(−23 kcal/mol/RT) in agreement with previous temperature programmed desorption experiments. The efficiencies of electron impact ionization of C60 to C60+ and C60++ is measured for electron energies from 10 to 105 eV for neutrals at 875 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.466032
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  • 4
    Electronic Resource
    Electronic Resource
    Pulsed laser deposition of ZnO nanocluster films by Cu-vapor laser (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1149-1152 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of stoichiometry, grain size, cathodoluminescence colors, adhesion, and surface morphology of zinc oxide films, deposited by a Cu-vapor laser at room temperature, as a function of oxygen ambient pressure during synthesis were investigated. Auger electron spectroscopy showed that ZnO films with a Zn/O ratio close to 1 were obtained at oxygen pressures 〉10−1 Torr. X-ray diffraction revealed that pulsed laser deposited zinc oxide films were composed mainly of nanocrystals, the average grain size of which grew from 5 to 17.5 nm as the oxygen pressure was increased from 10−5 to 1 Torr. The surface morphology of the films, as determined by secondary electron microscopy, also exhibited increasing roughness as the grain size increased. Films grown in an oxygen pressure 〉1.5×10−1 Torr glowed blue under electron bombardment, while slightly substoichiometric films glowed white under similar excitation. Films deposited in an oxygen background pressure up to 1.5×10−1 Torr exhibited good adhesion to substrates. Deposition rate on the order of 4.6 nm/s was obtained. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370857
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  • 5
    Electronic Resource
    Electronic Resource
    GaAs nanostructures and films deposited by a Cu-vapor laser (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2208-2210 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of GaAs nanoclusters and films deposited on substrates by a Cu-vapor laser were investigated. Nanoclusters of GaAs were produced by laser ablating a GaAs target in an Ar background gas. X-ray diffraction and transmission electron microscopy revealed that these GaAs nanoclusters had randomly oriented crystalline cores and As-rich amorphous oxide outer shells. These clusters assembled, upon vacuum annealing, along step edges and at defects on substrates to form wire-like structures. Our results also showed that GaAs films, when deposited in vacuum, did not have crystalline cores and were rich in As. Postdeposition annealing in vacuum to between 400 and 500 °C drove off the excess As. The stoichiometry of the films was confirmed by both Auger electron spectroscopy and x-ray photoelectron spectroscopy. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124966
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  • 6
    Electronic Resource
    Electronic Resource
    Deposition of SiC films by pulsed excimer laser ablation (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1540-1542 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of β-SiC were grown on Si substrates by excimer laser pulse ablation of bulk SiC. The films were examined by Auger electron, x-ray, and photoelectron spectroscopies and laser ionization mass analysis techniques. The film was smooth as monitored by scanning electron microscopy. Scanning electron and scanning tunneling microscopy (STM) showed inclusions in the deposited SiC films, and laser ionization mass analysis detected SiC dimers in the vapor plume emitted from the target.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103346
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  • 7
    Electronic Resource
    Electronic Resource
    Y-Ba-Cu-O superconducting films produced by long-pulse laser vaporization (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 197-199 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deposition of superconducting thin films from YBa2Cu3O7 targets using a long-pulse (ms) Nd-glass laser with 50 J/pulse energy has been demonstrated. The deposition rate was approximately 100 nm/pulse and the film stoichiometry was close to that of the target. Scanning electron microscopy revealed spherical inclusions in the film. Scanning tunneling microscopy in air showed a terrace-ledge structure on the uniform portion of the film. A film produced by four pulses on a SrTiO3 substrate, held at 540 °C, and post-annealed in O2 at 850 °C for about 2h exhibited an onset transition at 78 K and zero resistance at 61 K. This new approach can provide fast deposition rates and broad-area film coverage per laser shot.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102405
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  • 8
    Electronic Resource
    Electronic Resource
    Observation of C60 cage opening on Si(111)-(7×7) (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 150-152 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The "opening'' of C60 on Si(111)-(7×7) has been directly observed by scanning tunneling microscopy and correlated with Auger electron spectroscopy (AES) and temperature-programmed desorption spectroscopy. Isolated C60 clusters are observed on Si(111)-(7×7) after annealing the surface to 620 K. Annealing the surface to 1020 K causes the C60 cages to open and thereby cover more of the surface. Also evident is that the opened clusters agglomerate on the surface. The opening of the C60 cage is correlated with an increase in the amount of silicon—carbon bonding and with the increase in the carbon-to-silicon AES peak height ratio with increasing annealing temperature. The ratio increases since the opened cages cover more of the substrate silicon atoms, reducing AES emission from the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110382
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  • 9
    Electronic Resource
    Electronic Resource
    Vapor pressure of Buckminsterfullerene (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1313-1314 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The vapor pressures of the fullerenes C60 and C70 have been measured over the temperature range 400–600 °C by the Knudsen-effusion thermogravimetric technique. For C60, a heat of sublimation of 38±1 kcal/mol is obtained, and the value for C70 is 45±1 kcal/mol. The vapor pressure of C60 ranges from 1.8×10−5 and 1.4×10−2 Torr and that of C70 is between 1.4×10−5 and 8.7×10−3 Torr over the temperature range investigated. At 500 °C, the vapor pressure of C60 is about 1035 that of graphite. The entropy of vaporization of C60 obeys Trouton's rule.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107327
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  • 10
    Electronic Resource
    Electronic Resource
    Low-temperature vapor-phase etching of silicon carbide by dioxygen difluoride (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3480-3482 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Efficient room-temperature vapor-phase etching of SiC by the compound dioxygen difluoride (FOOF) has been demonstrated. FOOF was generated using a design based on thermal-atomization technique which produced gram quantities of the compound per hour. On both poly- and epitype silicon carbide at room temperature, about 6% of the FOOF molecules striking the surface reacted to form SiF4 and CO. Examination by atomic force microscopy (AFM) showed that the roughness and morphology of the etched surface were virtually indistinguishable from those of the original surface. No residues or anisotropies were present on the etched surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113770
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