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  • 1
    Electronic Resource
    Electronic Resource
    GaN epitaxial layers grown on 6H-SiC by the sublimation sandwich technique (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1033-1035 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the structural and optical properties of GaN epitaxial layers grown on 6H-SiC. We employed the sublimation sandwich method to grow single crystal layers at high growth rates with free carrier concentrations of 2×1017 cm−3. Very narrow x-ray diffraction peaks of the GaN (0002) plane are obtained indicating the high quality of this system. These findings are directly reflected in the optical properties. The photoluminescence shows a single sharp exciton line with a half width of 4 meV. Impurity related donor acceptor transitions are seen with very weak intensities. However, at lower energies the internal luminescence transitions of the 3d transition metal ions Fe and V are observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112143
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  • 2
    Electronic Resource
    Electronic Resource
    Dynamics of bound-exciton luminescences from epitaxial GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 415-417 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Free- and bound-exciton luminescences of GaN epitaxial layers grown by a sublimation technique on 6H-SiC substrates were investigated using time-integrated and time-resolved photoluminescence measurements at low temperatures. Lifetimes were determined for the donor-bound exciton at 3.4722 eV and for two acceptor-bound excitons with energies of 3.4672 eV and 3.459 eV. On the basis of our results we obtain an upper limit of the free-exciton oscillator strength of 0.0046 for GaN. Luminescences between 3.29 eV and 3.37 eV are identified as due to excitons deeply bound to centers located near the substrate-epilayer interface. Free excitons are captured by these centers within 20 ps. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116703
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  • 3
    Electronic Resource
    Electronic Resource
    Strongly localized excitons in gallium nitride (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2556-2558 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on strong excitonic luminescence in wurtzite GaN at 3.309 and 3.365 eV (T=6 K). These lines lie well below the band gap and are found commonly in layers grown by different techniques and on different substrates. From detailed photoluminescence investigations we find small thermal activation energies and a very weak electron–phonon coupling. The photoluminescence behavior under hydrostatic pressure is indicative of strongly localized defects. These findings are similar to observations of excitons localized at extended defects such as dislocations in II–VI compounds. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116182
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  • 4
    Electronic Resource
    Electronic Resource
    Erbium in silicon carbide crystals: EPR and high-temperature luminescence (1999)
    Springer
    Physics of the solid state 41 (1999), S. 32-34 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Erbium ions have been incorporated for the first time in bulk 6H-SiC crystals during growth, and they were unambiguously identified from the 167Er EPR hyperfine structure. High-temperature luminescence of erbium ions at a wavelength of 1.54 µm has been detected. The observed luminescence exhibits an increase in intensity with increasing temperature. The observation of Er luminescence in 6H-SiC offers a promising potential for development of semiconductor light-emitting devices at a wavelength within the fiber-optics transparency window.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130723
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  • 5
    Electronic Resource
    Electronic Resource
    Electron paramagnetic resonance of defects with metastable properties in crystalline GaN (1998)
    Springer
    Physics of the solid state 40 (1998), S. 1648-1652 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract An EPR study of GaN revealed the presence of defects exhibiting metastable properties. EPR spectra of two centers (ii1a and ii1b) with axial symmetry along the hexagonal axis of the crystal, which have strongly anisotropic g factors, were observed. The anisotropy of the spectra decreases, and the line shape changes, with increasing temperature. The spectra of the ii1a and ii1b centers disappear at 25 and 50 K, respectively. Subsequent cooling of the samples does not restore the EPR signals, which implies that one observes here phenomena inherent in defects with metastable states. To restore EPR signals, one has to warm the samples to room temperature under very specific conditions. The possible microstructure of the discovered defects is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130626
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  • 6
    Electronic Resource
    Electronic Resource
    Radiospectroscopy of wide-gap semiconductors: SiC and GaN (1999)
    Springer
    Physics of the solid state 41 (1999), S. 712-715 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The present report submitted to the Anniversary Conference of the A. F. Ioffe Physicotechnical Institute, “Physics at the Turn of the 21st Century,” deals with recent EPR studies of main impurities in the wide-gap semiconductors SiC and GaN, which appear to be the most promising materials for microelectronics and quantum semiconductor electronics at the start of the 21st century.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130855
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  • 7
    Electronic Resource
    Electronic Resource
    Electron-nuclear double resonance of deep-boron acceptors in silicon carbide (1996)
    Springer
    JETP letters 63 (1996), S. 848-854 
    Details
    ISSN: 1090-6487
    Keywords: 61.72.Ji ; 76.70.Dx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Electron-nuclear double resonance spectra of deep-boron acceptors in silicon carbide have been observed. The quadrupole and hyperfine interaction constants are determined. A sharp decrease of the quadrupole interaction and suppression of the anisotropic part of the hyperfine interaction, as compared with shallow-boron acceptors, are found. The observed effects are explained by the motion of holes inside the deep-boron acceptor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567101
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  • 8
    Electronic Resource
    Electronic Resource
    Electron spin resonance of copper pair centers in crystals with perovskite structure (1999)
    Springer
    JETP letters 69 (1999), S. 943-948 
    Details
    ISSN: 1090-6487
    Keywords: 76.30.Fc
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Copper pair centers, which could be of interest for obtaining quantitative information about exchange interactions in superconductors based on cuprate perovskites, are observed in crystals with the perovskite structure by the ESR method. Such centers are investigated in KTaO3:Cu and K1−x LixTaO3:Cu crystals. A model consisting of a chain of two equivalent Cu2+ ions and three oxygen vacancies, extending along the 〈 100〉 axis, is proposed for the centers. The exchange interaction in the pairs is ferromagnetic.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.568117
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  • 9
    Electronic Resource
    Electronic Resource
    Electron paramagnetic resonance of scandium in silicon carbide (1997)
    Springer
    Physics of the solid state 39 (1997), S. 44-48 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The EPR spectra of scandium acceptors and Sc2+(3d) ions are observed in 6H-SiC crystals containing a scandium impurity. The EPR spectra of scandium acceptors are characterized by comparatively small hyperfine interaction constants, whose values are consistent with the constants for other group III elements in SiC: boron, aluminum, and gallium acceptors. The EPR spectra of scandium acceptors undergo major changes in the temperature interval 20–30 K. In the low-temperature phase the EPR spectra are characterized by orthorhombic symmetry, whereas the high-temperature phase has higher axial symmetry. The EPR spectra observed at temperatures above 35 K and ascribed by the authors to Sc2+(3d) ions, or to the A 2− state of scandium, have significantly larger hyperfine structure constants and narrower lines in comparison with the EPR spectra of scandium acceptors. The parameters of these EPR spectra are close to those of Sc2+(3d) in ionic crystals and ZnS, whereas the parameters of the EPR spectra of scandium acceptors correspond more closely to the parameters of holes localized at group III atoms, in particular, at scandium atoms in GeO2. It is concluded that in all centers the scandium atoms occupy silicon sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130124
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  • 10
    Electronic Resource
    Electronic Resource
    Transition and rare-earth elements in the SiC and GaN wide-gap semiconductors: Recent EPR studies (1999)
    Springer
    Physics of the solid state 41 (1999), S. 783-785 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract EPR studies of transition-element ions in SiC and GaN and of erbium in 6H-SiC are reported. Data are presented on Sc2+ ions and scandium acceptors, and chromium and molybdenum ions in various charge states in SiC. A study was made of nickel and manganese in nominally pure GaN grown by the sandwich sublimation method. The first EPR investigation of Er in 6H-SiC is reported. Erbium was identified from the hfs of the EPR spectra. Various possible models of erbium centers in silicon carbides are discussed. Strong room-temperature erbium-ion luminescence was observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130872
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