Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Electrical, optical properties, and surface morphology of high purity InP grown by chemical beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5300-5308 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High purity InP layers have been grown by chemical beam epitaxy using H2 as the carrier gas for transporting the metal alkyl trimethylindium into the growth chamber. InP layers exhibiting Hall mobility as high as 238 000 cm2/V s at 77 K and with a peak value of 311 000 cm2/V s at 50 K and residual Hall concentration of 6×1013 cm−3 at 77 K were grown at 500 °C using a low V/III ratio (2.2) and a phosphine (PH3) cracking cell temperature of 950 °C. The 4.2 K photoluminescence spectra were dominated by donor bound exciton (D0,X)n up to n=6 and free exciton (X) transitions for InP layers grown above 500 °C. All the InP samples exhibited very weak acceptor related photoluminescence transitions indicating very low concentration of acceptors. The energy of these transitions suggests that Mg is the major residual acceptor. Donor impurity identification by high resolution magnetophotoluminescence indicated that S and Si are the major impurities. PH3 has been found to be the major source of S impurities in the present study.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357181
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Alloy broadening in photoluminescence spectra of GaxIn1−xAsyP1−y lattice matched to InP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2633-2639 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low temperature photoluminescence measurements of GaxIn1−xAsyP1−y alloys nearly lattice matched to InP to study the line broadening of the observed band to band and near band gap transitions in these materials were performed. We find that the dominant broadening mechanism is alloy broadening that originates from the spatial fluctuations of the band gap energy due to random anion and cation distribution. A model that assumes that occupation of the group-III sites by Ga and In atoms and of the group-V sites by As and P atoms occurs randomly, is fitted to the photoluminescence spectra of our samples. This provides an excellent description of the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356239
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Structural and optical characterization of monolayer interfaces in Ga0.47In0.53As/InP multiple quantum wells grown by chemical beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2640-2648 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out a detailed structural and optical characterization of Ga0.47In0.53As/InP multiple quantum wells grown by chemical beam epitaxy using a well-defined sequence of growth interruption times between successive layers. These growth interruption times result in the formation of interfacial layers which drastically alter the structural properties of Ga0.47In0.53As/InP multiple quantum wells. An analysis of double-crystal x-ray diffraction data reveals that exposure of InP to arsine for 2 s is sufficient to create approximately 3 monolayers of InAs0.55P0.45 ternary under biaxial compressive strain at the InP/Ga047In0.53As interface. Moreover, exposure of Ga0.47In0.53As to phosphine for 2 s results in the formation of approximately 2 monolayers of Ga0.48In0.52As0.21P0.79 quaternary under biaxial tensile strain at the Ga0.47In0.53As/InP interface. We find that long exposures to hydrides (over 5 s) rather than short ones give rise to interfacial layers with less compositional disorder and/or thickness fluctuation. Moreover, photoluminescence and absorption spectroscopy data reveal the negligible effect of InAsxP1−x and GaxIn1−xAsyP1−y interfacial layers on the emission and optical absorption properties of Ga0.47In0.53As/InP multiple quantum wells with sufficiently thick Ga0.47In0.53As layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361134
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence of heavily Zn-doped Ga0.85In0.15As grown by low-pressure metalorganic vapor phase epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4288-4294 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zn-doped, p-type, Ga0.85In0.15As samples grown by low-pressure metalorganic vapor phase epitaxy, with free carrier concentrations in the range of 3.22×1015–1.95×1020 cm−3, have been studied by photoluminescence as a function of temperature. At low doping levels, recombinations involving discrete impurity states and free excitons provided a measurement of both the 0 K reference band gap, Eg(0)=(1.296±0.003) eV, and of the Zn acceptor binding energy, E(Zn0)=(25±3) meV in the Ga0.85In0.15As alloy. High doping concentrations cause a band gap shrinkage ||ΔEg|| which has been observed with photoluminescence experiments. A model taking into account Kane band tails and assuming a constant matrix element for the relevant optical transitions has been fitted to the photoluminescence spectra of layers with doping levels in the range of 1.6×1019–1.95×1020 cm−3. This provided a good description of the experimental results. The 0 K band gap shrinkage, which appeared to be smaller than in GaAs, follows the relation ||ΔEg||=1.4×10−8p1/3 for Ga0.85In0.15As, with ||ΔEg|| in eV and p in cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352190
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Anomalous electrical behavior of n-type GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4874-4878 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hall data are presented for two n-type GaAs epilayers of different origin with dissimilar thickness, grown by metalorganic chemical vapor deposition. Both the Hall mobility and Hall electronic concentration were analyzed for each sample on the basis of a complete electrical transport model. The results for a 3-μm-thick sample, which was also the purest, were in good agreement with theory in the whole temperature range, without accounting for depletion effects. The other sample, 9 μm thick and more heavily doped, showed an increase of the Hall electronic concentration above 200 K, along with a depressed room-temperature Hall mobility. As for previous studies in InP, this behavior is well described by the presence of a deep center or complex of unknown origin.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343201
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    The effect of an asymmetric band of localized deep donors on the electronic transport of high-purity n-type InP (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5526-5531 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effect of the shape of a band of localized deep donors on the electronic transport of three high-purity n-type InP epilayers. A model accounting for a broad asymmetric band of localized deep donors or complexes of unknown origin, centered 167 meV below the conduction band edge with a width of about 245 meV, provided a remarkable description of both the Hall mobility and Hall electronic concentration in the temperature range of 4.2–300 K. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366410
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...