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  • 1
    Electronic Resource
    Electronic Resource
    The bonding of CAs acceptors in InxGa1−xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6754-6760 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InxGa1−xAs layers (0≤x≤0.37) doped with carbon (〉1020 cm−3) were grown on semi-insulating GaAs substrates by chemical beam epitaxy using carbon tetrabromide (CBr4) as the dopant source. Hall measurements imply that all of the carbon was present as CAs for values of x up to 0.15. The C acceptors were passivated by exposing samples to a radio frequency hydrogen plasma for periods of up to 6 h. The nearest-neighbor bonding configurations of CAs were investigated by studying the nondegenerate antisymmetric hydrogen stretch mode (A−1 symmetry) and the symmetric XH mode (A+1 symmetry) of the H–CAs pairs using IR absorption and Raman scattering, respectively. Observed modes at 2635 and 450 cm−1 had been assigned to passivated Ga4CAs clusters. New modes at 2550 and 430 cm−1 increased in strength with increasing values of x and are assigned to passivated InGa3CAs clusters. These results were compared with ab initio local density functional theory. Modes due to AlInGaCAs clusters were detected in samples containing grown in Al and In. These results demonstrate that for InGaAs, CBr4 is an efficient C doping source since both In–CAs bonds as well as Ga–CAs bonds are formed, whereas there is no evidence for the formation of In–CAs bonds in samples doped with C derived from trimethylgallium or solid sources. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363803
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  • 2
    Electronic Resource
    Electronic Resource
    Predicting thin-film stoichiometry in reactive sputtering (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 887-891 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical, optical, and mechanical properties of a compound film depend strongly on the composition of the film. Therefore, it is interesting to study a wide variety of compositions of many new compound materials. Reactive sputtering is a widely used technique to produce compound thin films. With this technique it is possible to fabricate thin films with different compositions. However, it has not yet, to any great extent, been possible to predict the composition of the sputtered film. In this article we will present a model that enables us to predict both sputtering rate and film composition during reactive sputtering. The results point out that there exists a very simple linear relationship between processing parameters for maintaining constant thin-film composition in the reactive sputtering process. Based on these results, it is possible for the first time to combine information of both sputtering rate and film composition into the same graphical representation. Access to this new and simple graphical representation may eliminate much of the "trial and error'' work that earlier has been associated with the reactive sputtering process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340030
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  • 3
    Electronic Resource
    Electronic Resource
    Metastable assisted deposition of TiN films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1521-1523 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An excess heat from an exothermic reaction of metastable Ar (43P0) and Ar (43P2) atoms with N2 molecules at low contents of N2 in Ar was found to be responsible for an enhanced thermionic emission, an enhanced production of Ti target vapor, an increased ionization, and consequently for an enhanced deposition rate of TiN films in the radio frequency hollow cathode plasma jet (RHCPJ). This finding emphasizes favorable geometry of hollow cathodes, as well as an important role of metastables in plasma-assisted processes. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114479
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  • 4
    Electronic Resource
    Electronic Resource
    Investigations of evaporated silicon p-n junctions and their application to junction field-effect transistors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2148-2152 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-n junctions formed by vacuum evaporation of silicon on crystalline silicon have been investigated. The junctions were formed by ion implantation of 49BF+2 in the evaporated silicon films. Subsequently, an isochronal heat treatment in the range of 600–850 °C was performed and its influence on the doping distributions and corresponding diode behavior was studied. Secondary-ion mass spectrometry was used to investigate the resulting boron distributions. A sharp decrease in the boron concentration was found at the interface for the sample annealed at 850 °C.The fabricated p-n junctions were evaluated by measuring the current-voltage characteristics. Comparisons were made to ordinary diffused p-n junctions in bulk silicon. Using the current-voltage measurements, the leakage current and the ideality factor of the diodes were extracted. The reverse currents were also measured and show a nonsaturating behavior. The resistivity of the films were investigated as a function of anneal temperature, and it was found that the boron in the films is effectively activated for heat treatments 〉700 °C. An estimation of the hole mobility in the films was made from the measured resistivity and doping distributions. The annealed structure was investigated with transmission electron microscopy. The heat treated films were found to be polycrystalline with very small grains (〈250 A(ring)). To demonstrate the usefulness of this technology, a junction field-effect transistor with evaporated gate diode was fabricated. The performance of this transistor is also demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345550
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  • 5
    Electronic Resource
    Electronic Resource
    Superhigh-rate plasma jet etching of silicon (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1615-1617 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new, very high rate dry etching system based on the plasma jet principle is presented. In this device the active gases are fed into the processing vacuum chamber through a small 0.5 mm i.d. nozzle. By applying radio frequency power (13.56 MHz) a hollow cathode discharge is created inside the nozzle. This discharge will be very intense and effective in dissociating the gas mixture used for reactive etching. A jet stream of radicals will be formed. By placing a silicon substrate in front of this jet stream it is possible to perform very high rate reactive etching of silicon. Etch rates as high as 0.1–0.2 mm/min can be easily obtained. It is demonstrated that the etch rate and the width of the etching crater are sensitive to different processing conditions. The width of the etching crater may be smaller than the diameter of the nozzle exit under certain conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102215
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  • 6
    Electronic Resource
    Electronic Resource
    Comparison of pKá Values Determined by Electrometric Titration and Ultraviolet Absorption Methods (1954)
    s.l. : American Chemical Society
    Analytical chemistry 26 (1954), S. 726-727 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60088a031
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  • 7
    Electronic Resource
    Electronic Resource
    Linear arc discharge source for large area plasma processing (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 577-579 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A linearly scalable plasma source based on the radio frequency generated hot hollow cathode discharge between two parallel plates with a magnetic field perpendicular to the plates near the outlet of the cathode is introduced. The magnetic field facilitates and confines the hollow cathode discharge which leads to a high power density and a high cathode wall temperature. The geometry and location of hot zones is directly controlled by magnetic field. The linear arc discharge (LAD) source exhibits similar features as the cylindrical radio frequency hollow cathode plasma jet. Experiments indicate a metastable assisted growth of TiN films. LAD source extends abilities of the radio frequency hollow cathode plasma jet to the large area processing. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118210
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  • 8
    Electronic Resource
    Electronic Resource
    Diel variation in habitat use by planktivores in field enclosure experiments: the effect of submerged macrophytes and predation (1998)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of fish biology 53 (1998), S. 0 
    Details
    ISSN: 1095-8649
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: The importance of submerged macrophytes and predation risk for habitat use by 0+ perch (Perca fluviatilis) and 0+ roach (Rutilus rutilus) was investigated in triplicate 78-m2 field enclosures with and without macrophytes in the middle. During three experimental runs, habitat use by fish were monitored every 6 h with Breder traps. Each period included 2 days of fish monitoring before stocking with piscivorous perch, and 2 days after. Predation risk significantly changed habitat use by 0+ perch in the morning, midday and evening, but not at night. By comparing with the unvegetated controls, we found a refuging effect of macrophytes in the morning. Under predation risk there was significant diel variation in habitat use by 0+ perch, suggesting a migration from the open water habitat at night into the macrophytes in the morning. Roach continued to use open water even after predators were stocked, but responded like perch by reducing overall activity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1095-8649.1998.tb00242.x
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  • 9
    Electronic Resource
    Electronic Resource
    Adjunctive peribulbar anaesthesia for paediatric ophthalmic surgery: are the risks justified? (2002)
    Oxford UK : Blackwell Science Ltd.
    Pediatric anesthesia 12 (2002), S. 0 
    Details
    ISSN: 1460-9592
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1460-9592.2002.0787a.x
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  • 10
    Electronic Resource
    Electronic Resource
    Guided intubation via the laryngeal mask (1992)
    Oxford, UK : Blackwell Publishing Ltd
    Anaesthesia 47 (1992), S. 0 
    Details
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2044.1992.tb03278.x
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