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  • 1
    Electronic Resource
    Electronic Resource
    Kinetics of carboxylic acid surface displacement reactions: a coupled surface plasmon and surface Raman scattering investigation (1991)
    s.l. : American Chemical Society
    Langmuir 7 (1991), S. 2188-2195 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00058a036
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  • 2
    Electronic Resource
    Electronic Resource
    Production and evolution of composition, morphology, and luminescence of microcrystalline arsenic oxides produced during the anodic processing of (100) GaAs (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4997-5003 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs when exposed to a 7 V anodic bias in aqueous HCl, forms pitted structures from which visible photoluminescence has been observed. Previous work in our laboratory identified the source of the luminescence to be arsenic oxide microcrystals, formed during the electrochemical oxidation, which evolve in composition and morphology during the course of the anodic processing. The density and size of pits is dependent on the solution conditions as well as the applied potential program (stepped vs swept to 7 V. At early times (t〈30 min) the pits are composed of a mixture of small (∼1 μm) and larger (10's of μm) faceted microcrystals identified by x-ray photoelectron spectroscopy and energy-dispersive x-ray analysis to be a combination of As(III) and As(V) oxides. At longer times As(III) oxides predominate, and the smaller microcrystals are no longer observed, suggesting that the smaller microcrystals are As(V) oxide, and that they evolve chemically into As(III) oxide over the course of the oxidation. A suitable reaction pathway which explains the observed predominance of As(III) species is suggested. The luminescence properties of these electrochemically produced structures were investigated by near-field excitation. The luminescent properties evolve in parallel with the morphology and composition although the form of the spectrum is invariant in time and consistent with that obtained from bulk As2O3 and As2O5. The similarity of emission obtained from the two types of microcrystals suggests an impurity-related origin. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371470
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  • 3
    Electronic Resource
    Electronic Resource
    Structure evolution in a-SiC:H films prepared from tetramethylsilane (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2951-2960 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of deposition conditions on the molecular structure of thin films deposited from tetramethylsilane through plasma enhanced chemical vapor deposition was investigated using infrared spectroscopy, ultraviolet–visible absorption spectroscopy, and sputtered neutral atom mass spectrometry (SNAMS). The infrared spectra revealed a strong dependence of film structure on the deposition pressure, with high pressures (〉50 mTorr) producing linear, polymeric films, and low pressures (〈50 mTorr) producing amorphous, crosslinked films. The structure of the polymeric films was dominated by carbon atoms incorporated as intact, chain terminating methyl groups. The crosslinked films contained fewer methyl groups and proportionately more bridging methylene and branching methylidyne groups. SNAMS measurements revealed that the carbon-to-silicon ratio was inversely dependent on deposition pressure, with carbon content increasing as deposition pressures decrease. UV–visible measurements indicated that the optical properties of the films were strongly dependent on deposition pressure, particularly at pressures below 100 mTorr. Films prepared in these experiments exhibited optical gaps ranging from 2.1 to 3.9 eV. From these results, a film structure evolution model is postulated, stressing the interactions between precursor structure, fragment structure, and plasma energetics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348606
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  • 4
    Electronic Resource
    Electronic Resource
    Structural modification in reactive-ion-etched i-InP and n+-InP studied by Raman scattering (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2983-2994 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural and electrical property modifications in i-InP and n+-InP by reactive ion etching have been characterized by using Raman scattering to observe changes in the positions and intensities of intrinsic phonons and coupled phonon-plasmon bands. Different etch gas compositions (Ar, He, CH4/H2, CH4/Ar, CH4/He, and CH4/H2/Ar), bias potentials (0–500 V), and etch times were examined. Electrical property changes were followed by correlating results with a one-sided abrupt junction model. Ar and He, which interact with the material by physical sputtering processes, were found to induce the greatest structural and electrical modifications. Ar-etched samples exhibited the greatest structural modification, with evidence of structural damage coming from far beyond the calculated penetration depth of low-energy Ar+, while samples etched in methane-based plasmas showed very little structural perturbation. Etching in all of the gas mixtures used produced some degree of electrical modification in n+-InP, with He plasmas causing the most significant changes. In general, samples etched with lower ion energies and sputter components exhibited the least structural and electrical modification.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353031
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  • 5
    Electronic Resource
    Electronic Resource
    High precision temperature- and energy-dependent refractive index of GaAs determined from excitation of optical waveguide eigenmodes (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1328-1330 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaAs-Al0.22Ga0.78As heterostructure was prepared and used as a multimode optical waveguide. Propagation constants for individual modes were measured by exciting one mode at a time via real-space surface grating couplers, and the resulting eigenmode distributions were used to obtain the refractive index of GaAs at a matrix of temperatures and photon energies spanning 40 K〈T〈300 K and 1.40 eV〈hν〈1.50 eV. Values for dn/dT and the extrapolated refractive index at T=0 K were also obtained. The dominant error source in these measurements was uncertainty in the angular placement of the sample. These measurements agree well with the few pre-existing temperature-dependent measurements, but are an order of magnitude more precise.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103473
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  • 6
    Electronic Resource
    Electronic Resource
    Enhanced Raman scattering at dielectric surfaces. 2. Molecular orientations from polarized surface Raman scattering (1990)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 2039-2042 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100368a058
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  • 7
    Electronic Resource
    Electronic Resource
    Spatially resolved band-edge emission from partially coalesced GaN pyramids prepared by epitaxial lateral overgrowth (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3031-3033 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Partially coalesced GaN pyramidal structures are formed by metal-organic chemical vapor deposition using the epitaxial lateral overgrowth method. Spatially resolved optical characterization of these structures has been carried out using cathodoluminescence (CL) microscopy and spectroscopy. The coalesced region exhibits much stronger and more uniform luminescence than other regions of the sample. In addition, the emission from the coalesced region is blue-shifted, while that from the sidewalls is red-shifted, relative to broad area grown samples. The peak shift mechanism is discussed based on the CL temperature and power dependence and analysis of the confocal Raman scattering. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126569
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  • 8
    Electronic Resource
    Electronic Resource
    Metal-assisted chemical etching in HF/H2O2 produces porous silicon (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2572-2574 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple and effective method is presented for producing light-emitting porous silicon (PSi). A thin (d〈10 nm) layer of Au, Pt, or Au/Pd is deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2. Depending on the type of metal deposited and Si doping type and doping level, PSi with different morphologies and light-emitting properties is produced. PSi production occurs on the time scale of seconds, without electrical current, in the dark, on both p- and n-type Si. Thin metal coatings facilitate the etching in HF and H2O2, and of the metals investigated, Pt yields the fastest etch rates and produces PSi with the most intense luminescence. A reaction scheme involving local coupling of redox reactions with the metal is proposed to explain the metal-assisted etching process. The observation that some metal remains on the PSi surface after etching raises the possibility of fabricating in situ PSi contacts. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319191
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  • 9
    Electronic Resource
    Electronic Resource
    Near-surface electronic structure in GaAs (100) modified with self-assembled monolayers of octadecylthiol (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1755-1757 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Passivation of the GaAs (100) surface by self-assembled monolayers of octadecylthiol (ODT) has been studied using inelastic light scattering as a probe of the near-surface electronic structure. Application of the ODT self-assembled monolayers reduces the width of the depletion region at the surface of GaAs resulting in a reduction of the surface band bending, and the electron scattering time is increased as well. The ODT passivated surfaces are more stable to environmental degradation, over time and under temperature stress, than inorganic sulfide treated surfaces which have been reported. Organic thiol passivation may provide an attractive alternative to inorganic sulfide protocols for reduction of surface recombination velocities in III–V devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113357
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  • 10
    Electronic Resource
    Electronic Resource
    Sputter-induced formation of an electron accumulation layer in In0.52Al0.48As (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3575-3577 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ar-sputtering of In0.52Al0.48As was investigated with room-temperature Raman and photoluminescence spectroscopy. A clear increase of carrier density in the near-surface region was observed in the Raman spectra. The PL intensity was found to depend in a complex way on plasma self-bias potential, incident laser irradiance, and InAlAs doping level, indicating that the recombination mechanisms dominating the PL response differ with changing experimental conditions. The observed trends can be explained by sputter-induced formation of an electron accumulation layer in the near-surface region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111202
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