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  • 1
    Electronic Resource
    Electronic Resource
    Discovery of a new photoinduced electron trap state shallower than the DX center in Si doped AlxGa1−xAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5632-5634 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found a new electron trap state in Si-doped AlxGa1−xAs by deep level transient spectroscopy and constant temperature capacitance transient measurements under strong light illumination. This new trap is shallower than the DX center associated with Si impurity in that its emission and capture activation energies are equal to 0.20±0.05 and 0.17±0.05 eV, respectively. Its maximum concentration is comparable to the concentration of the DX center. Possible origins of this new trap and its relationship to the DX center are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343672
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence study of the growth of indium phosphide by metalorganic chemical vapor deposition (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5486-5492 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of unintentionally doped indium phosphide by low pressure metalorganic chemical vapor deposition (LPMOCVD) using triethlylindium and phosphine has been investigated by low temperature photoluminescence (PL). Pregrowth annealing was found to result in improved crystalline quality of the seed surface. The predominant acceptor impurity on the annealed substrate surface and in the initial epitaxial region (1200 A(ring)) was shown to be carbon. The major acceptor impurity in thicker epilayers further away from the substrate interface was determined to be Zn. Silicon was also identified from the PL spectra, though its concentration might be much smaller than that of zinc. No deep level impurities were observed in this material. Most important of all, the highly resolved exciton PL spectrum demonstrated that excellent quality InP comparable to the best material grown by vapor phase epitaxy could be grown by LPMOCVD without the need for phosphine cracking.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335460
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  • 3
    Electronic Resource
    Electronic Resource
    Annealing studies of low-temperature-grown GaAs:Be (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1699-1707 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The isochronal and isothermal annealing characteristics of acceptor-doped GaAs:Be grown at low substrate temperatures (300 °C) by molecular-beam epitaxy (LTMBE) have been studied. The Be was introduced in a range of concentrations from 1016 to 1019 cm−3. Electrical measurements of as-grown material up to the highest Be concentration of 1019 cm−3 show that no free holes are contributed to the valence band even though Raman spectroscopy of the Be local vibrational mode indicates that the majority of the Be impurities occupy substitutional sites. It is proposed that Be acceptors are rendered inactive by the high concentration of AsGa-related native donor defects present in LTMBE material. The concentration of AsGa-related defects in the neutral charge state was estimated from infrared absorption measurements to be as high as 3×1019 cm−3. A distinct annealing stage at 500 °C, similar to that found in irradiation-damaged and plastically deformed GaAs, marks a rapid decrease in the concentration of AsGa-related defects. A second annealing stage near 800 °C corresponds to the activation of Be acceptors. The presence of gallium vacancies VGa was investigated by slow positron annihilation. Results indicate an excess concentration of VGa in LTMBE layers over bulk-grown crystals. Analysis of isothermal annealing kinetics for the removal of AsGa-related defects gives an activation energy of 1.7±0.3 eV. The defect removal mechanism is modeled with VGa-assisted diffusion of AsGa to As precipitates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351200
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  • 4
    Electronic Resource
    Electronic Resource
    Defect density measurements of low temperature grown molecular beam epitaxial GaAs by photothermal deflection spectroscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 834-836 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The subgap optical absorption of GaAs layers grown by low temperature molecular beam epitaxy is measured by photothermal deflection spectroscopy (PDS). The absorption increases as the growth temperature decreases at a fixed wavelength. Defect densities evaluated from the absorption spectra and the known absorption cross sections are between 1018 and 1019 cm−3. It is shown that complementary PDS phase spectra can be used to separate the absorption of the epitaxial layers from the bulk. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115459
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  • 5
    Electronic Resource
    Electronic Resource
    Two-dimensional electron gas in In0.53Ga0.47As/InP heterojunctions grown by atmospheric pressure metalorganic chemical-vapor deposition (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3145-3149 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality modulation doped In0.53Ga0.47As/InP heterostructures have been grown by atmospheric pressure metalorganic chemical-vapor deposition (MOCVD) using solid trimethylindium source. The two-dimensional nature of electrons bound in the In0.53Ga0.47As/InP heterojunctions is proved by a Shubnikov-de Haas effect experiment. Electron Hall mobilities as high as 12000, 83000, 98000, and 92000 cm2/V s at 300, 77, 40, and 4.2 K are obtained, respectively. The electron effective mass is measured to be m@B|CR =0.043 m0 by cyclotron resonance experiments on the samples with two-dimensional electron sheet concentrations of (3.0–3.7)×1011/cm2. From far-infrared impurity absorption data the ionization energy of the residual donors in the MOCVD-grown In0.53Ga0.47As is determined to be 2.95 meV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335818
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of light on the DX centers in Si- and Te-doped GaAlAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2469-2471 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy (DLTS) and constant temperature capacitance transient measurements have been performed on the DX centers under light illumination in GaAlAs alloys doped with Si and Te. Assuming that the effect of light is to ionize the DX centers, experimental DLTS spectra have been simulated numerically. The stimulated spectra reproduces qualitatively the spectra in Te-doped samples only. In Si-doped samples, the stimulated spectra cannot reproduce the light-induced peak reported recently by Jia et al. [J. Appl. Phys. 66, 5632 (1989)]. Our results confirm that this peak may be associated with a light-induced metastable center related to Si in GaAlAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103854
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  • 7
    Electronic Resource
    Electronic Resource
    Analysis of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures by secondary-ion mass spectrometry and ion channeling (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1305-1307 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Secondary-ion mass spectrometry has been used to analyze the Al and In depth profiles in pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures. Surface segregation of In was found on the upper interface of the strained InGaAs layer under a moderate growth temperature of 510 °C. The segregation effect was found to be suppressed when the As4 overpressure was doubled. Ion channeling measurements are capable of differentiating the coherency of the strained InGaAs layer in the samples studied. A correlation was found between the coherency of the layer and its electrical transport property.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104344
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  • 8
    Electronic Resource
    Electronic Resource
    Growth studies of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2022-2024 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained GaAs/InGaAs/AlGaAs quantum well structures have been grown by molecular beam epitaxy at substrate temperatures from 375 to 510 °C. The well layer thickness and In composition are analyzed by ion channeling and particle-induced x-ray emission as a function of growth temperature. Test structures for modulation-doped field-effect transistors grown at 375 and 510 °C under two different As4 overpressures were also characterized by Van der Pauw measurements and low-temperature photoluminescence. The observed differences in film quality can be explained by the influence of substrate temperature and As4 flux on the cation surface mobility during growth of the InGaAs layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103005
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  • 9
    Electronic Resource
    Electronic Resource
    Characterization of strained InGaAs single quantum well structures by ion beam methods (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 45-47 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated strained InGaAs single quantum well structures using MeV ion beam methods. The structural properties of these structures, including composition and well size, have been studied. It has been found that the composition obtained by Rutherford backscattering spectrometry and particle-induced x-ray emission techniques agrees very well with that obtained by the ion channeling method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102642
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  • 10
    Electronic Resource
    Electronic Resource
    Actively mode-locked erbium fiber ring laser using a Fabry–Perot semiconductor modulator as mode locker and tunable filter (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2737-2739 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A wavelength-tunable actively mode-locked erbium fiber ring laser was demonstrated using a Fabry–Perot semiconductor modulator. The modulator played the simultaneous roles of an intensity mode locker and a tunable optical filter. Stable single- or dual-wavelength nearly transform-limited picosecond pulses at gigabit repetition rates were generated. Continuous wavelength tuning was achieved by simply controlling the temperature of the modulator. Pulse train with a repetition rate up to 19.93 GHz (eight times the driving frequency) was obtained by using rational harmonic mode-locking technique. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123998
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