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  • 1
    Electronic Resource
    Electronic Resource
    Study and improvement of anomalous interface states of metal-oxide-semiconductor structures induced by rapid thermal post-oxide annealing (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5038-5042 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anomalous interface states were caused by post-oxide rapid thermal annealing in an n+ polycrystalline silicon metal-oxide-semiconductor capacitor. These anomalous interface states have been investigated using high/low frequency capacitance/gate voltage (C/V) measurements. An additional annealing process (450 °C, 30 min in 90% N2/10% H2 mixed gas) was found to improve the anomalous interface states. The improved results were identified using a constant current injection stress test.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353774
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  • 2
    Electronic Resource
    Electronic Resource
    A low drive voltage electroabsorption modulator using an InGaAs/InP superlattice (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5895-5897 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectral transmission, reflection, and photocurrent absorption data obtained on gas-source molecular beam epitaxy grown InGaAs/InP multiple quantum well (MQW) and superlattice p-i-n diode structures demonstrate, for the first time in this materials system, that similar modulation to MQW structures can be achieved using superlattices, but at significantly lower operating voltages. Specifically, we have observed photocurrent absorption changes of as much as 58%, transmission changes of 8.2%, and reflection changes of 32% for applied biases of only 4 V, in nonresonant modulators operating at a wavelength ∼1.5 μm. These results encourage the possibility of employing such devices in fast, high density optical modulator arrays operating over the 1.3–1.6 μm range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355305
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  • 3
    Electronic Resource
    Electronic Resource
    Ratio matching. Comments (1974)
    s.l. : American Chemical Society
    Analytical chemistry 46 (1974), S. 1876-1878 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60348a010
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  • 4
    Electronic Resource
    Electronic Resource
    Insulated-gate multiple quantum well optical modulator on InP (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1964-1966 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Insulated-gate metal-insulator-semiconductor (MIS) diodes have been fabricated on multiple quantum well stacks of InP/InGaAs grown by gas-source molecular beam epitaxy. These devices have shown excitonic resonances and optical modulation spectra in pass-through operation similar in shape, but smaller in magnitude, to what has been previously reported with p-i-n and Schottky diode structures. Compared to these other devices the MIS modulator has the advantage of being totally planar with excellent interdevice electrical isolation suggesting its suitability for high complexity array applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103981
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  • 5
    Electronic Resource
    Electronic Resource
    Programmable organic light-emitting devices (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3023-3025 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report a promising type of electrically programmable, i.e., reconfigurable, organic light-emitting devices (OLEDs) incorporating a thin carrier-blocking layer as the sacrificial fusing layer. In such devices, the carrier-blocking layer has a lower glass transition temperature than neighboring layers. By raising the internal temperature of the device above the transition temperature of the carrier-blocking layer with a large enough current, interdiffusion between organic layers could occur through such a layer. As a consequence, neighboring layers are fused and a new path for carrier transport is formed, bypassing the carrier-blocking property and altering the device characteristics. A device that emits blue light as fabricated but can be transformed into a green-emitting one is demonstrated. Such a type of device may be used for color pixels in OLED displays, user-programmable OLED applications, and nonvolatile memory devices.© 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1414305
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  • 6
    Electronic Resource
    Electronic Resource
    Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1168-1170 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Schottky barrier heights of various metals on the high permitivity oxides tantalum pentoxide, barium strontium titanate, lead zirconate titanate, and strontium bismuth tantalate have been calculated as a function of the metal work function. It is found that these oxides have a dimensionless Schottky barrier pinning factor S of 0.28–0.4 and not close to 1 because S is controlled by Ti–O-type bonds not Sr–O-type bonds, as assumed in earlier work. The band offsets on silicon are asymmetric with a much smaller offset at the conduction band, so that Ta2O5 and barium strontium titanate are relatively poor barriers to electrons on Si. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123476
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  • 7
    Electronic Resource
    Electronic Resource
    Electronic structure of the ferroelectric layered perovskite SrBi2Ta2O9 (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1704-1706 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The band structure of the layered perovskite SrBi2Ta2O9 (SBT) was calculated by tight binding and the valence band density of states was measured by x-ray photoemission spectroscopy. We find both the valence and conduction band edges to consist of states primarily derived from the Bi–O layer rather than the perovskite Sr–Ta–O blocks. The valence band maximum arises from O p and some Bi s states, while the conduction band minimum consists of Bi p states, with a wide band gap of 5.1 eV. It is argued that the Bi–O layers largely control the electronic response whereas the ferroelectric response originates mainly from the perovskite Sr–Ta–O block. Bi and Ta centered traps are calculated to be shallow, which may account in part for its excellent fatigue properties. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118003
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  • 8
    Electronic Resource
    Electronic Resource
    Highly bright blue organic light-emitting devices using spirobifluorene-cored conjugated compounds (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 577-579 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An efficient and morphologically stable pyrimidine-containing spirobifluorene-cored oligoaryl, 2,7-bis[2-(4-tert-butylphenyl)pyrimidine-5-yl]-9,9′-spirobifluorene (TBPSF), as an emitter or a host for blue organic light-emitting devices (OLEDs), is reported. The steric hindrance inherent with the molecular structure renders the material a record-high neat-film photoluminescence (PL) quantum yield of 80% as a pure blue emitter (PL peak at 430 nm) of low molecular weight, and a very high glass-transition temperature (Tg) of 195 °C. Blue OLEDs employing this compound as the emitter or the emitting host exhibit unusual endurance for high currents over 5000 mA/cm2. When TBPSF is used as a host for perylene in a blue OLED, maximal brightness of ∼80 000 cd/m2 had been achieved, representing the highest values reported for blue OLEDs under dc driving. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1493669
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of rapid thermal annealing on gate induced drain leakage in a n-channel metal-oxide-semiconductor field effect transistor (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3058-3059 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Significant gate induced drain leakage caused by post-oxide rapid thermal annealing (RTA) was studied in this letter in comparison with the non-RTA process for n-channel metal-oxide- semiconductor field effect transistor. It is found that the sub-breakdown leakage increases with increasing RTA temperature. We proposed that interface states and recombination centers generated after RTA are the dominant factors in the enhancement of the leakage current. In addition, it is found that RTA has no effect on the avalanche breakdown voltage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110257
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  • 10
    Electronic Resource
    Electronic Resource
    Extra interface state generation enhanced by fluorine in tungsten-polycided metal-oxide-semiconductor devices with nitrided oxide gate dielectric (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1456-1458 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interface state generation in oxynitride gate dielectric devices with tungsten-polycide (W-polycide) and polycrystalline silicon (poly-Si) gate structures were investigated. A significant amount of fluorine-induced interface states were detected in W-polycide gate device with nitridation of thermal gate oxide by both the charge pumping technique and capacitance/gate voltage (C/V) measurement. Re-oxidation of oxynitride gate oxide results in partial annealing of these interface states. A model of the fluorine induced strain gradient between silicon dioxide and silicon (SiO2/Si) interface was proposed to explain the extra interface state generation mechanism. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114493
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