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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of texture and microstructure of oriented PbTiO3 thin films grown by metalorganic chemical vapor deposition on Si(100) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4805-4810 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oriented PbTiO3 (PT) thin films, approximately 2000 A(ring) thick, have been successfully grown on Si(100) using a low-pressure, cold-wall metalorganic chemical vapor deposition technique at temperatures as low as 450 °C. Titanium isopropoxide, Ti(C3H7O)4, tetraethyl lead, Pb(C2H5)4, and pure oxygen were used as precursor materials in this work. The dependence of film texture and microstructure on the Pb/Ti source flow ratio and growth temperature is described. With proper growth conditions, stoichiometric PbTiO3 films can be produced. Two types of polycrystalline PbTiO3 films, including multi-oriented and single-oriented textures, were obtained. At growth temperatures above the Curie point (cubic-to-tetragonal transition temperature), multi-oriented textures were found. On the other hand, oriented films were fabricated at growth temperatures in the range of 450–475 °C. It is hypothesized that the preferred orientation is due to the combined effects of thermal stress and anisotropic growth rates along different crystal directions. Microstructure examinations using scanning electron microscopy showed visible grain boundaries for all crystalline samples, as well as the non-columnar cross-section morphology, which indicates highly dense and uniform structures. Using the transmission electron microscopy technique, these grains were found to consist of many fine crystalline particles (10–50 nm). Selected area electron diffraction patterns from these crystalline particles have been indexed in terms of the tetragonal PbTiO3 phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357252
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  • 2
    Electronic Resource
    Electronic Resource
    Electronic structure of barium titanate studies by the extended Hückel tight-binding method (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 451-454 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structure of barium titanate is determined according to the extended Hückel tight-binding method using atomic data based on a self-consistent-field calculation. The effects of the phase transition on the partial density of states are studied. The electronic contribution to the phase stability of the compound is calculated from the total density of states. The tetragonal phase is found to be stable as compared to the cubic phase. The density of states is compared with available x-ray photoemission spectra and is found to be in agreement with some features in experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357095
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  • 3
    Electronic Resource
    Electronic Resource
    A high-temperature x-ray-diffraction study of epitaxial PbTiO3 thin films on MgO(100) grown by metal-organic chemical-vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6235-6242 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial lead titanate (PbTiO3) thin films were grown on MgO(100) single-crystal substrate by metal-organic chemical-vapor deposition at a growth temperature of 650 °C. The films were dense, stoichiometric, and epitaxial. The domain structure was studied via x-ray-diffraction ω scans and in-plane Φ scans. Existence of c and a domains in the PbTiO3 films was evident. Consistent with literature reports, the a domains were found to have four variants 90° apart from each other, tilting about 2.2° away from the surface normal. The population ratio between c and a domain of the PbTiO3 films was determined to be approximately 2.3 to 1. The domain structure was found to be stable and reproducible during repeated thermal cycling above and below Tc. Furthermore, lattice parameters and Curie temperatures of PbTiO3 thin films were measured during the thermal cycles. The lattice parameters were found to be smaller and the Curie temperatures were shifted lower than the corresponding bulk values. This is attributed to the film stress effect. A theory based on the Landau–Ginzburg–Devonshire function has been developed to explain the shift of the Curie temperatures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363700
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  • 4
    Electronic Resource
    Electronic Resource
    X-ray truncation rod study of Ge(001) surface roughening by molecular beam homoepitaxial growth (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6858-6864 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface roughness was determined by x-ray diffraction for Ge films on Ge(001) grown by molecular beam epitaxy at room temperature. The truncation rod intensities and transverse-scan line profiles were measured as a function of perpendicular momentum transfer. Depending on the initial morphology of the surface, the same growth condition resulted in very different surface morphologies. Two types of initial surfaces were used. One was an atomically flat surface with very large terraces. The other, characterized by a roughness exponent α=1, had a high density of steps. Deposition on the flat surfaces resulted in a fairly smooth surface, but with a graded crystalline density below the surface. Deposition on the α=1 surfaces resulted in a more jagged surface characterized by an increase in the average height–height correlation function and a final roughness exponent of α=1/2. Additional and complementary information about the surface structure was obtained by scanning tunneling microscopy observations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361507
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  • 5
    Electronic Resource
    Electronic Resource
    In-situ x-ray diffraction study of the impurity effects on the cubic-to-tetragonal phase transformation in PbTiO3 (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5856-5863 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The impurity effects on the phase transformation in a single crystal of PbTiO3 have been studied by in-situ x-ray diffraction technique. Two single crystals were employed for this study with one containing a noticeable amount of impurities. For the pure sample, a hysteresis of the structural parameters such as lattice constants with respect to temperature for the cubic-to-tetragonal phase transformation is found. Such a hysteresis loop is typical of the martensitic phase transformation. Existence of the athermal regions has been reported for the first time. The athermal regions were found to be asymmetric between heating and cooling cycles. Furthermore, the lattice parameters in both athermal regions show different behavior. These are caused by microstrain effects during growth of the product phase. In fact, within the athermal regions both the cubic and tetragonal phases are highly strained due to coherency strain. The sample with impurities has shown the existence of embryonic tetragonal fluctuations at temperatures far above Tc. The presence of impurities lowers Tc, and results in a wider hysteresis. The athermal regions are narrower for the sample with impurities, suggesting preferred heterogeneous nucleation at impurity defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358400
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical characteristics of 25 nm Pr(ZrTi)O3 thin films grown on Si by metalorganic chemical vapor deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2157-2159 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb(Zr0.5Ti0.5)O3 thin films 25 nm in thickness were grown on LaNiO3/Pt/Ti buffered Si substrates at 600 °C by metalorganic chemical vapor deposition. P–E studies showed a remanent polarization value of 8 μC/cm2 with a coercive field of 200 kV/cm. In polarization fatigue studies, these films only showed slight degradation in remanent polarization up to 4×108 cycles (±3 V oscillation) before breakdown. Moreover, the effect of space charge on the C–V behavior of these films was illustrated I–V characteristics of these films were also described. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305824
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of thickness on the electrical properties of metalorganic chemical vapor deposited Pb(Zr, Ti)O3 (25–100 nm) thin films on LaNiO3 buffered Si (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1509-1515 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb(Zr, Ti)O3 (PZT) thin films with (100) preferred orientation were prepared using metalorganic chemical vapor deposition on LaNiO3 (LNO) buffered platinized Si with thickness varying from 25–100 nm. The dependence of electrical properties of PZT films on thickness was studied using several techniques, including polarization–electric field (P–E), temperature variable current–voltage (I–V), and capacitance–voltage (C–V) measurements. Because of the formation of Schottky barriers at ferroelectric/electrode interfaces, built-in electric fields are present. A progressive increment in carrier concentration and interfacial built-in electric field versus reducing PZT film thickness was observed, which is believed to be a dominant factor controlling the measured dielectric/ferroelectric properties. The higher built-in electric field in thinner PZT films would pin the dipoles at the interfacial region and retard the response of dipoles to the external electric field. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1383262
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  • 8
    Electronic Resource
    Electronic Resource
    In situ x-ray diffraction measurement of Pd2Si transformation kinetics using a linear position-sensitive detector (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1182-1190 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The x-ray diffraction technique described previously for measurement of growth kinetics of Pd2Si layers from their solid state reaction couples has been extended by the use of a one-dimensional position-sensitive detector (PSD). Additionally, the method has been extended to include measurement of the Pd layer. A detailed description of the experimental arrangement and analytical procedures is presented. The kinetics of epitaxial Pd2Si film growth were measured in situ over a range of 170–230 °C. The PSD results, using data obtained from both the Pd2Si and Pd layers, were able to confirm parabolic growth behavior for the Pd2Si film. The rate constants followed Arrhenius behavior and yielded an activation energy of E=1.32±0.07 eV with a prefactor k0=0.49 cm2/s for the Pd2Si layer analysis and E=1.34±0.17 eV with a prefactor of 0.72 cm2/s for the Pd layer analysis. The PSD technique significantly enhances data collection and provides extended analytical capabilities. The method has the potential for measuring rate kinetics of other solid state reactions/transformations such as surface oxidation and alloy decomposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339977
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  • 9
    Electronic Resource
    Electronic Resource
    Kinetics of Pd2Si layer growth measured by an x-ray diffraction technique (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3467-3474 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An x-ray diffraction approach has been developed for determination of the kinetics of growth of Pd2Si layers. Epitaxial Pd2Si films were grown on Si(111) substrates over a temperature range of 160–222 °C by a solid-state reaction between the substrates and the Pd overlayers. The parabolic rate equation was verified and rate constants showed Arrhenius behavior with an activation energy Ea=1.06 eV and prefactor k0=7×10−4 cm2/s. The low value of Ea suggests a short-circuit diffusion mechanism. It is reasonable to expect that impurities and microstructure may play important roles in the growth process. Impurity levels in the specimens were evaluated by analytic techniques suited to thin-film study: Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Auger electron spectrometry. No impurities were present at concentrations approaching 1 at. %. Some O, C, and F were detected at the Pd2Si/Si interfaces. The annealing ambient was the major source of further contamination. Upon emergence of the growth interface through the sample surface (some Pd2Si on surface), impurity pickup was detected. Interfacial roughness was indicated by all the techniques to be on the order of 20 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336816
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  • 10
    Electronic Resource
    Electronic Resource
    Gauging film thickness: A comparison of an x-ray diffraction technique with Rutherford backscattering spectrometry (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 643-645 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An x-ray diffraction technique for determining thin-film thickness is presented which should prove to be a valuable alternative to the array of spectroscopies (Rutherford backscattering spectrometry, Auger electron spectroscopy, etc.) currently favored for these measurements. Some of the virtues of this x-ray diffraction approach are its nondestructive nature, fast data acquisition rate (enabling in situ observations), thickness resolution better than 5 nm, and conventional equipment requirements. Results are shown for Pd2Si thin films grown during isothermal annealing of Pd coatings (100 nm) on Si at 200 °C for various amounts of time. A comparison of these x-ray measurements with Rutherford backscattering spectrometry data taken from the same specimens is used to demonstrate the validity of the x-ray technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334757
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