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  • 1
    Electronic Resource
    Electronic Resource
    A time delay system with high threshold immunity (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 315-317 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A time delay system of high threshold immunity was constructed with specially designed NAND gates in which the transistors were biased off with a considerably high biasing voltage. Such a system was reliably used in the pulsed power experiment where strong electromagnetic noise was produced and proved itself to be superior to the conventional time delay system consisting of integrated circuit chips in noise immunity. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150199
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Gate bias controlled charge distribution in the subbands of In0.29Al0.71As/In0.3Ga0.7As modulation doped heterostructures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4743-4748 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gate voltage dependent charge distribution within the quantum wells of modulation δ-doped In0.29Al0.71As/In0.3Ga0.7As heterostructures, grown by molecular beam epitaxy and fabricated into front-gated, six-arm, Hall bar configurations, were evaluated by means of resistivity, Hall effect, and Shubnikov–de Haas (SdH) oscillatory magnetoresistance measurements. δ-doping the barrier layer with Si to 6×1012/cm2 leads to an apparent electron density, as obtained from Hall measurement made at 1.6 K, ns=2.65×1012/cm2. The SdH spectra exhibit a gate voltage-dependent transition from one subband to two subbands and the total electron density is in good agreement with that obtained from the Hall data. From a fast Fourier transform of the SdH data and low field magnetoresistance measurements the electron densities and mobilities of the two subbands at Vg=0 were found to be ns1=2.39×1012 cm−2, μ1=21 800 cm2/V s and ns2=3.96×1011 cm−2, μ2=16 000 cm2/V s, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357243
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Band offset of GaAs/In0.48Ga0.52P measured under hydrostatic pressure (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 744-746 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence spectra of an In0.48Ga0.52P alloy and a p-type GaAs/In0.48Ga0.52P multiple quantum well, both grown by molecular beam epitaxy, have been obtained under hydrostatic pressures from 0 to 6 GPa. The zero-pressure extrapolation of the InGaP(X) to GaAs(Γ) transitions yields a 0.40±0.02 valence-band offset, and hence only a small, 0.06 ± 0.02 eV, conduction-band offset. These offset values are in agreement with measured values of the confinement energy versus well width.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104534
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  • 4
    Electronic Resource
    Electronic Resource
    Consequences of the silicon donor distribution tail in δ-doped, pseudomorphic AlxGa1−xAs/In1−yGa1−yAs modulation-doped heterostructures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1546-1548 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the properties of modulation-doped, pseudomorphic AlxGa1−xAs/ InyGa1−yAs heterostructures containing embedded, Si δ-doped GaAs wells. From resistivity and Hall effect measurements, and from Shubnikov–de Haas measurements at 1.6 K, we have determined the charge transport parameters before and after optically induced ionization of the DX centers in the structures. We find a DX center diffusion tail associated with the δ-doped donors extending into the undoped AlxGa1−xAs barrier and spacer layers and conclude that for efficient modulation doping of a quantum well, δ-doping and embedding of the donors within a GaAs well can reduce but not entirely eliminate the effects of DX centers on the charge transport parameters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112939
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  • 5
    Electronic Resource
    Electronic Resource
    Strain relaxation of compositionally graded InxGa1−xAs buffer layers for modulation-doped In0.3Ga0.7As/In0.29Al0.71As heterostructures (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1129-1131 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Modulation-doped In0.3Ga0.7As/In0.29Al0.71As heterostructures have been grown on GaAs substrates by molecular beam epitaxy using a compositionally step-graded InxGa1−xAs buffer layer. We found that the buffer layer produces essentially total relaxation with 〈2×106/cm2 dislocations present in the In0.3Ga0.7As layer. The structural perfection of this layer is reflected in the electrical and galvanomagnetic properties of its two-dimensional electron-gas channel which has a sheet-electron density of 1.2×1012/cm2, peak mobilities of 9 300 cm2/V s at room temperature and 31 000 cm2/V s at 77 K, and a mobility anisotropy of ∼4% along orthogonal 〈110〉 directions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106429
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  • 6
    Electronic Resource
    Electronic Resource
    Torsional modulus of vapor-grown carbon fibers (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2347-2349 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The torsional modulus (G) of vapor-deposited carbon fibers of both as-grown and annealed samples were determined with a torsion pendulum. G is found to be both stress and size dependent. The extrapolated zero-stress value of torsional modulus is 105±5 GPa for a 5.4 μm diameter as-grown fiber and 200±10 GPa for a 8.4 μm diameter annealed fiber. G decreases with increasing diameter. These unusually high values of torsional moduli, compared to other types of carbon fibers, are believed to be the results of the tree-ring structural morphology and the degree of graphitization of these vapor-deposited carbon fibers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107021
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  • 7
    Electronic Resource
    Electronic Resource
    Composition dependent transport properties of strain relaxed InxGa1−xAs(x〈0.45) epilayers (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1116-1118 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The concentration and mobility of the two-dimensional electron gas present at the interface between strain-relaxed, lattice matched, InyAl1−yAs/InxGa1−xAs(x 〈 0.45), modulation doped heterojunctions grown by means of compositionally step-graded buffer layers on GaAs substrates, were measured at room temperature and at 77 K. The composition dependence of the electron density is attributed to the dependence of the band-gap energy of InxGa1−xAs and that of InyAl1−yAs on x, with a conduction band offset, ΔEc∼0.67ΔEg. The room temperature electron mobility increases from 9×103 cm2/V s for x=0.07 to 1.05×104 cm2/V s for x=0.45. Such strain-relaxed heterostructures have higher electron mobilities than similar pseudomorphic structures with the same sheet electron concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107686
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    Paper (German National Licenses)
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