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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of heavily carbon-doped GaAs grown by metalorganic chemical vapor deposition and metalorganic molecular beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 981-987 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon-doped GaAs with carbon concentrations ranging from 2×1017 cm−3 to 2.6×1020 cm−3 has been characterized by variable temperature Hall effect measurements, secondary ion mass spectrometry (SIMS), and double-crystal x-ray diffraction (DCXD). The samples studied were grown by metalorganic chemical vapor deposition (MOCVD) and by metalorganic molecular beam epitaxy (MOMBE). The hole mobility is dominated by degenerate conduction for hole concentrations ≥1×1019 cm−3, and the 77 K resistivity is typically 30%–35% lower than at 300 K in these samples. The mobilities of C-doped p+-GaAs are found to be significantly higher than for Zn- or Be-doped p+-GaAs for doping concentrations in excess of 2×1018 cm−3. The maximum achievable hole mobilities for C-doped material grown by the two techniques are nearly identical, indicating that neither MOCVD nor MOMBE has an inherent advantage over the other for producing low-resistivity p-type GaAs. SIMS analysis and Hall effect measurements reveal that the total carbon concentration, [C], is higher than the as-grown hole concentration, p, in the most heavily doped samples. DCXD measurements show general agreement with the lattice mismatch predicted by Vegard's law. However, for [C](approximately-greater-than)1020 cm−3 a discrepancy between the predicted and measured mismatch suggests that partial lattice relaxation or the presence of interstitial carbon may need to be considered in order to adequately describe the lattice contraction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351776
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  • 2
    Electronic Resource
    Electronic Resource
    Yellow–green luminescence from isoelectronic nitrogen centers in GaP grown by molecular-beam epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1841-1843 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular-beam-epitaxial growth of GaP incorporating isoelectronic N traps was achieved through coinjection of NH3 and PH3 which were dissociated into P2 and PN fluxes. The photoluminescence spectrum of a sample with a N concentration of ∼2×1019 cm−3 indicated that the dominant emission wavelength was at 5691 A(ring) (2.18 eV), which is characteristic of the nearest-neighbor pair transition NN1. The spectrum of a sample containing ∼2×1020 cm−3 N atoms also displayed strong NN1 pair luminescence in addition to much stronger emission line at 5846 A(ring) (2.121 eV), which is believed to be from a local mode outside the vibrational band. The peak intensity of this local mode was ∼25 times greater than the peak emission of the NN1 line from the lighter doped sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349501
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  • 3
    Electronic Resource
    Electronic Resource
    Growth-induced shallow acceptor defect and related luminescence effects in molecular beam epitaxial GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 741-754 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of a defect responsible for the "g'' bound exciton line at 1.5112 eV that is frequently detected in photoluminescence spectra of GaAs grown by molecular beam epitaxy (MBE). A direct correlation has been observed between this line and a transition at 1.4946 eV, which is shown to result from a conduction band-to-acceptor recombination involving a shallow, unidentified acceptorlike defect that is labeled "A.'' The activation energy of the defect is 24.8±0.2 meV, about 1.7 meV lower than that of CAs acceptor. Upon hydrogenation the defect is passivated more extensively than any known shallow acceptor species in GaAs. This result is analyzed in terms of a passivation model, from which it can be inferred that the A defect is not due to a simple substitutional Group II impurity on a Ga site. Incorporation of the A defect strongly affects the luminescence properties of the material. An almost complete quenching of the donor-bound exciton lines, profound changes in the line shape and relative intensity of the free exciton recombination, and appearance of a sharp transition of unknown origin at 1.5138 eV were observed with increasing defect concentration. Apparently "donorless'' low temperature exciton recombination spectra are reported for defect-rich p-type MBE GaAs layers with donor concentrations as high as 7×1014 cm−3 and compensation ratios of ∼0.3. The dependence of the defect incorporation on MBE growth parameters is discussed. The feasibility of MBE growth of high purity, nearly shallow defect-free p-type GaAs layers at marginally As-stabilized surface conditions over an about 1–5 μm/h range of deposition rates is demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346779
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  • 4
    Electronic Resource
    Electronic Resource
    Hydrogenation of Si- and Be-doped InGaP (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5866-5870 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on the hydrogenation of Be-doped (p-type) and Si-doped (n-type) In1−xGaxP epitaxial layers grown lattice matched to GaAs (x ∼ 0.5). Low-temperature (1.7 K) photoluminescence, electrochemical carrier concentration profiling, and scanning electron microscopy are used to study the effects of hydrogenation on carrier recombination, carrier concentration, and surface morphology. Hydrogenation is found to passivate Si donors and Be acceptors and to improve photoluminescence efficiency, but causes mild surface damage. The carrier concentration following hydrogenation is found to be lowest in acceptor-doped material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346961
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  • 5
    Electronic Resource
    Electronic Resource
    Investigation of the thermal dissociation of PH3 and NH3 using quadrupole mass spectrometry (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8025-8030 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal dissociation of PH3 and NH3 injected through a Ta-based high-pressure gas-injection cell were studied. Using a quadrupole mass spectrometer, the Ta was found to effectively dissociate the PH3 into primarily P2, P4, and H2 molecules with an injector temperature as low as 550 °C. The introduction of NH3 through this same injector resulted in dissociation into N2 and H2 for an injector temperature greater than 900 °C. When NH3 and PH3 were coinjected, again P2, P4, N2, and H2 were the primary molecules produced; however, an additional dimer, PN, was also detected. The PN concentration was maximum at a cell temperature of 700 °C. This dimer was found to be an effective source for introducing nitrogen as an isoelectronic trap in GaP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347447
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  • 6
    Electronic Resource
    Electronic Resource
    The gas source molecular beam epitaxial growth of AlxGa1−xP on (100) GaP (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2133-2139 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of AlxGa1−xP for Al mole fractions between 0 and 1 has been achieved on (100) GaP substrates using gas source molecular beam epitaxy with elemental Ga and Al, and P2 cracked from PH3 as the source materials. The observed reflection high energy electron diffraction pattern of the GaP surface indicates that an exponential increase in the incident P2 flux is required to maintain good morphology beyond 690 °C. This temperature was found to correspond closely to the congruent vaporization temperature of Ga from the growth surface. The addition of Al on the surface was found to substantially increase the Ga congruent vaporization temperature from the GaP surface. The growth rates for AlxGa1−xP as a function of growth temperature between 600 and 750 °C were determined by transmission electron microscopy. Using elemental Si as an n-type dopant, free electron concentrations as high as 1.65×1019 cm−3 in GaP and 1.5×1019 cm−3 in Al0.28Ga0.72P were achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346569
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  • 7
    Electronic Resource
    Electronic Resource
    Microstructure and wet oxidation of low-temperature-grown amorphous (Al/Ga,As) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 747-752 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous and polycrystalline compounds of (Ga,As) and (Al,As) grown at very low temperatures by molecular-beam epitaxy are characterized. The ultimate microstructure and the amount of excess arsenic incorporated in the (Ga,As) or (Al,As) layers are found to depend on the arsenic overpressure during the low-temperature growth. With lower arsenic overpressure, a polycrystalline structure prevails and less excess arsenic is observed inside the layer. In contrast, a high incorporation of excess arsenic achieved by high-arsenic overpressures leads to the formation of amorphous films. Upon wet oxidation, the lateral oxidation rate of (Al,As) is found to depend on the crystallinity of the (Al,As) layer and the amount of excess arsenic. During the same process, recrystallization proceeds in the (Ga,As) layer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326466
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  • 8
    Electronic Resource
    Electronic Resource
    Strain dependence on barrier material and its effect on the temperature stability of photoluminescence wavelength in self-assembled GaInAs quantum wires (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5623-5626 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain-induced lateral-layer ordering process was used to fabricate GaInAs quantum wire (QWR) heterostructures on InP whose QWR layers are separated by different barrier materials. Using cross-sectional transmission electron microscopy the microstructure of the different QWR samples was studied. It was found that GaInAs QWR heterostructures with nominally lattice matched AlGaInAs barriers resulted in heavily strained QWR regions relative to the same structure with nominally lattice matched AlInAs or InP barriers. Furthermore, photoluminescence studies demonstrate that these heavily strained QWR samples with AlGaInAs barriers have a wavelength-shift rate of 0.2 to 1.0 Å/°C in the 293–360 K range. This is in comparison to GaInAs QWR samples with ternary or binary barriers and a GaInAs quantum well control sample that have wavelength-shift rates of ∼2.5 and ∼6.0 Å/°C, respectively. It is shown empirically that a minimum amount of strain in the GaInAs QWR/AlGaInAs barrier region is required to achieve wavelength-shift rates below 1 Å/°C. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415755
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  • 9
    Electronic Resource
    Electronic Resource
    Strain relaxation and defect reduction in InxGa1−xAs/GaAs by lateral oxidation of an underlying AlGaAs layer (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6922-6924 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain relaxation in In0.25Ga0.75As and In0.4Ga0.6As grown on GaAs substrates at low temperature has been studied before and after laterally oxidizing an underlying Al0.98Ga0.02As layer. The relaxation as a function of layer thickness has been measured by cross-sectional transmission electron microscopy and x-ray analysis. It is found that oxidation of the Al0.98Ga0.02As layer improves the relaxation of the strained InxGa1−xAs layer. Moreover, the interfacial misfit dislocations have been removed, and the threading dislocation density has decreased approximately by one order of magnitude after oxidation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287766
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  • 10
    Electronic Resource
    Electronic Resource
    Visible wavelength (6470 A(ring)) GaxIn1−xP/GaAs0.66P0.34 quantum wire heterostructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7124-7129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Utilizing the strain-induced lateral-layer ordering (SILO) process, we have grown GaxIn1−xP multiple quantum wires (MQWR) on ternary GaAs0.66P0.34 substrates using a modified strain-balance mechanism. The resulting [110] lateral modulation occurred with a periodicity of ∼300 A(ring). Two dimensions of quantum confinement were obtained by surrounding the laterally confined GaxIn1−xP regions by layers of higher-energy-gap Al0.15Ga0.53In0.32P in the growth direction. A redshift in the photoluminescence emission was observed as the growth temperature was increased attributed to a stronger lateral composition modulation at the higher growth temperatures. Based on the modified strain-balance mechanism, light-emitting diodes with the GaxIn1−xP MQWR active region were fabricated using the SILO process. Strongly TE-polarized room-temperature electroluminescence from these devices was observed at 6470 A(ring). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363725
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