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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of GaAs/AlGaAs heterojunction bipolar transistor devices using photoreflectance and photoluminescence (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6160-6163 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance (PR) and photoluminescence (PL) techniques were used to characterize the AlGaAs/GaAs heterojunction bipolar transistor (HBT) wafers grown by molecular beam epitaxy (MBE). The line shape of the PR GaAs signal is closely related to the cleanliness of the MBE system. The Franz–Keldysh oscillations of the GaAs signal become sharper, well defined, and the oscillation amplitude increases slightly as the MBE system is cleaned up. The dc current gain of the HBT devices was observed to increase accordingly. The origin for this correlation is discussed. The PL spectra of the HBT device wafers indicate that the intensity of the free-to-bound transition corresponding to the donor to valence band becomes strong in high gain device wafers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371669
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  • 2
    Electronic Resource
    Electronic Resource
    Planarized growth of AlGaAs/GaAs heterostructures on patterned substrates by molecular beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2128-2130 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The profiles of AlGaAs/GaAs heterostructures grown by gas-source molecular beam epitaxy (GSMBE) on patterned substrates at different growth temperatures have been studied. It was found that at higher substrate temperature, the GSMBE growth results in Al clustering and the formation of high index planes. With a proper combination of low growth temperature and etched profile, a quasiplanarized surface is obtainable. A process simulation program is found to be capable of simulating the GSMBE growth profile at lower substrate temperature with reasonable accuracy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354739
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  • 3
    Electronic Resource
    Electronic Resource
    Determination of V/III ratios on phosphide surfaces during gas source molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 254-256 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phosphorus-controlled growth rate of homoepitaxial (100) InP, GaP, and AlP on GaP substrates by gas source molecular beam epitaxy was investigated. Elemental group-III sources and thermally cracked phosphine were used. The growth rate was monitored by the specular beam intensity oscillations of reflection high-energy electron diffraction. This technique gives exact values of V/III ratio on the surface by measuring the amount of phosphorus which is actually incorporated into the film. Here the V/III ratio is defined as P-controlled growth rate divided by group-III-controlled growth rate instead of the beam flux V/III ratio. Also the phosphorus surface desorption activation energies were measured to be 0.61 eV and in the range between 0.89 and 0.97 eV for InP and GaP, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104706
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  • 4
    Electronic Resource
    Electronic Resource
    Reflection high-energy electron-diffraction study of metalorganic molecular-beam epitaxy of GaAs using trimethylgallium and arsenic (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4393-4395 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth behavior of metalorganic molecular-beam epitaxial (MOMBE) growth of GaAs using trimethylgallium and solid arsenic is studied by the intensity oscillation behavior of reflection high-energy electron-diffraction (RHEED). The growth process is more complicated than conventional MBE using elemental sources. In MOMBE the growth rate depends not only on the substrate temperature but also on the arsenic pressure. In addition, the RHEED behavior indicates a possibility of atomic layer epitaxy using trimethylgallium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344914
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  • 5
    Electronic Resource
    Electronic Resource
    High-resolution x-ray diffraction of InAlAs/InP superlattices grown by gas source molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1530-1532 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural properties of InAlAs/InP superlattices grown by gas source molecular beam epitaxy on (001)InP were investigated extensively with high-resolution x-ray diffraction. Very high quality material was obtained as indicated by narrow peak widths, numerous satellite peaks, and distinct Pendellosung fringes. Intermixing of group-V elements at each interface was quantified by dynamical simulations of (004), (002), and (115) reflections. The accuracy of the fits to both peak positions and peak intensities for all three reflections provides strong evidence for the proposed four-layer periodic structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105168
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  • 6
    Electronic Resource
    Electronic Resource
    A differential reflection high energy electron diffraction measurement system (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 655-659 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An economical, real-time differential reflection high energy electron diffraction (RHEED) measurement system which is effective in a high-noise environment is described. Two fiber optic cables sample the RHEED intensities from the phosphorescent screen in a molecular beam epitaxy (MBE) growth chamber. The first cable observes the RHEED oscillations with the inherent background noise while the second cable monitors the background noise. The differential RHEED unit subtracts the RHEED signal combined with the background noise from the background noise, leaving only the RHEED signal. The resultant "clean'' RHEED oscillation is displayed on an IBM compatible computer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142063
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical characteristics of nearly relaxed InAs/GaP heterojunctions (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1551-1553 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of lattice mismatched InAs/GaP heterojunctions are examined. In spite of a high dislocation density at the heterointerface, the current versus voltage characteristics show nearly ideal behavior with low reverse leakage currents and high breakdown voltages. The forward current varied exponentially with bias displaying ideal factors of 1.10 or less. Band offsets estimated from current–voltage and capacitance–voltage analysis are consistent with previous estimates based on differences in Schottky barrier heights. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118614
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  • 8
    Electronic Resource
    Electronic Resource
    Use of annealed low-temperature grown GaAs as a selective photoetch-stop layer (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1678-1680 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate annealed low-temperature grown (LTG) GaAs to be a highly effective etch-stop layer while photoetching n-type normal-growth-temperature GaAs. During this process, the etch rate is controlled by the transport of photogenerated carriers to the semiconductor/electrolyte interface. Because of the very short minority carrier lifetime in LTG-GaAs, only a very small portion of photogenerated carriers can reach the semiconductor surface to complete the electrolytic decomposition reaction. Therefore, the etch rate of LTG-GaAs is reduced considerably. In our studies, the etch rate selectivity can be as high as 800. Furthermore, we demonstrate that doping concentration, presence of an ohmic contact, photon energy, and pH value of the etching solution can be used to control the etch rate of n-GaAs during the photoetching process. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115903
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  • 9
    Electronic Resource
    Electronic Resource
    Incoherent interface of InAs grown directly on GaP(001) (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 981-983 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report molecular beam epitaxial growth of InAs on GaP(001), which has the largest lattice mismatch (11%) among all the arsenides and phosphides. Reflection high-energy electron diffraction and high-resolution transmission electron microscopy were used to optimize the growth and characterize the epilayer. It is found that the growth mode can be controlled by the surface V/III ratio: three-dimensional and two-dimensional layer-by-layer growths under As-stable and In-stable conditions, respectively. In both cases, a regular network of pure edge-type (90°) misfit dislocations with a spacing of 4 nm was formed directly at the heterointerface, which corresponds to 85% of degree of strain relaxation. The epilayers grown under In-stable conditions have relatively smooth surfaces with low threading dislocation densities. This is owing to the fact that the interface misfit dislocations were exclusively of the edge-type which have no threading component and which relieve strain most effectively. The results demonstrate the ability to control the growth mode as well as the misfit dislocation nucleation type. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117102
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  • 10
    Electronic Resource
    Electronic Resource
    Erratum: "Incoherent interface of InAs grown directly on GaP (001)'' [Appl. Phys. Lett. 69, 981 (1996)] (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2609-2609 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118160
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