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  • 1
    Electronic Resource
    Electronic Resource
    Dielectric and ferroelectric response as a function of annealing temperature and film thickness of sol-gel deposited Pb(Zr0.52Ti0.48)O3 thin film (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2700-2711 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the thickness and annealing temperature dependence of the structural, morphological, compositional, and electrical properties including ferroelectric characteristics of Pb(Zr0.52Ti0.48)O3 thin films deposited by a sol-gel method. The thickness and annealing temperature of the films were in the range of 0.12–0.36 μm and 520–670 °C, respectively. The crystalline structure and growth behavior of the films have been studied by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. It is demonstrated that the weak ac electric field dependence of the permittivity of the films in terms of the Rayleigh law can be explained. The coercive field obtained from a sweep up and down schedule of the capacitance-voltage curves is asymmetrical and shows different behavior according to the annealing temperature and thickness. We also show that the activation energy coefficient, γ, obtained from frequency dependent polarization-electric field hysteresis loops is related to the annealing temperature and thickness of the films. A low leakage current density (∼100 nA/cm2 at 200 kV/cm) and low annealing temperature (∼520 °C) demonstrate the potential of the deposited films for integrated ferroelectric random access memory and piezoelectric sensor applications. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371114
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  • 2
    Electronic Resource
    Electronic Resource
    Solution deposition and heteroepitaxial crystallization of LaNiO3 electrodes for integrated ferroelectric devices (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3013-3015 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrically conducting LaNiO3 (LNO) thin layers were deposited on (100)SrTiO3 (STO) and (100)LaAlO3 (LAO) substrates and crystallized at temperatures between 700 and 800 °C. The chemical method of deposition was solution sol-gel processing. X-ray 2θ and rocking curve measurements, φ scans, and atomic force microscopy studies revealed the degree of crystallinity and heteroepitaxy for the integrated electrodes. The full-width at half-maximum for (100) LNO deposited on LAO and STO was 0.16° and 0.25°, respectively. Surface bonding states and chemistry were examined by x-ray photoelectron spectroscopy. The room temperature resistivity of LNO electrodes deposited on STO and LAO was 460 and 340 μΩ cm, respectively. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120247
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical properties of paraelectric (Pb,La)(Nb,Ti)O3 thin films for dynamic random access memory devices (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 764-766 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Paraelectric (Pb,La)(Nb,Ti)O3 (PLNT) thin films were deposited by the sol-gel method on (111)Pt/Ti/SiO2/Si substrates at temperatures as low as 600 °C for the use of ULSI (ultralarge scale integration) DRAM (dynamic random access memory) capacitors. Films exhibited a regular polycrystalline cubic perovskite phase and showed the presence of paraelectricity in terms of hysteresis of capacitance–voltage (C–V) and polarization–electric field (P–E) characteristics in metal–insulator–metal (MIM) capacitors. The dielectric constants of the films are 611 for a 200 nm thick film and 619 for a 300 nm thick film in a frequency of 100 kHz. The charge storage density obtained from the polarization measurement for a 200 nm thick film was about 50 fC/μm2, while a leakage current density of 70 nA/cm2 was observed at an applied field of 100 kV/cm. These values qualify the PLNT thin films for an alternate storage node dielectric in DRAM capacitors. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116735
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  • 4
    Electronic Resource
    Electronic Resource
    The Characteristics of a Mosaic Monochromator with a Cu Single Crystal (2004)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 270-273 (Aug. 2004), p. 1387-1391 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/48/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.270-273.1387.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    Surface Characterization of Electrochemically Fabricated CuO Doped ZnO Thin Film (2005)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 277-279 (Jan. 2005), p. 972-976 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In this study, ZnO and CuO doped zinc oxide thin films were cathodically deposited in aqueous zinc chloride solutions in the presence of oxygen on a Pt/Ti/SiO2/Si substrate through an electrochemical reaction. A mercurous sulfate electrode was used as a reference electrode and the counter electrode was a Pt spiral wire. Deposition was carried out in solutions containing Zn2+ ions introduced as ZnCl2 salt at concentrations ranging from 5.0 x 10-4 to 5.0 x 10-2 M. The bath temperatures were controlled from 65℃ to 80℃. The oxygen gas was introduced from argon/oxygen mixtures allowing its partial pressure to be fixed along with its concentration in the solution. Doping of CuO was carried out in cupric nitrate or a cupric chloride/0.1M KCl solution. The influence of the Cu/Zn concentration, deposition temperature of a solution, applied cathodic potential and deposition time were optimized. After the potential was applied, the cathodic current reached a steady state within 5 min. The composition, and the characterization of the surface of the films were investigated through X-ray diffractometry, X-ray photoelectron spectroscopy, atomic force microscopy and scanning electron microscopy
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/48/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.277-279.972.pdf
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  • 6
    Electronic Resource
    Electronic Resource
    A Study on Spin Injection of Ferromagnetic Electrode for OLED Application (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Advances in science and technology Vol. 52 (Oct. 2006), p. 98-103 
    Details
    ISSN: 1662-0356
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Natural Sciences in General , Technology
    Notes: We have investigated the magnetic effect on the electrical properties of Al and Nielectrode based organic light-emitting devices (OLEDs). The Ni electrode-based OLEDs werecompared to Al-based OLEDs in terms of their applied magnetic fields (0.3 T). We found that forcurrent density-voltage on Al and Ni electrodes for OLEDs, Ni electrodes can be applied to OLEDs.The value of magneto-impedance or the resistance ratio decreased in comparison to situations withthe absence of a magnetic field. The magneto-impedance or resistance effect indicated that the spinpolarization was preserved through the organic layer. We found that the frequency response ofmagneto-impedance decreased the external magnetic field at room temperature. Electricalcharacterizations of the OLEDs with spin-polarized electrodes indicated the applicability of theferromagnetic electrodes to organic light-emitting devices
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/42/transtech_doi~10.4028%252Fwww.scientific.net%252FAST.52.98.pdf
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