Bibliothek

X
feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
Filter
Datenquelle
Materialart
Erscheinungszeitraum
  • 1
    Digitale Medien
    Digitale Medien
    Dielectric and ferroelectric response as a function of annealing temperature and film thickness of sol-gel deposited Pb(Zr0.52Ti0.48)O3 thin film (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2700-2711 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the thickness and annealing temperature dependence of the structural, morphological, compositional, and electrical properties including ferroelectric characteristics of Pb(Zr0.52Ti0.48)O3 thin films deposited by a sol-gel method. The thickness and annealing temperature of the films were in the range of 0.12–0.36 μm and 520–670 °C, respectively. The crystalline structure and growth behavior of the films have been studied by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. It is demonstrated that the weak ac electric field dependence of the permittivity of the films in terms of the Rayleigh law can be explained. The coercive field obtained from a sweep up and down schedule of the capacitance-voltage curves is asymmetrical and shows different behavior according to the annealing temperature and thickness. We also show that the activation energy coefficient, γ, obtained from frequency dependent polarization-electric field hysteresis loops is related to the annealing temperature and thickness of the films. A low leakage current density (∼100 nA/cm2 at 200 kV/cm) and low annealing temperature (∼520 °C) demonstrate the potential of the deposited films for integrated ferroelectric random access memory and piezoelectric sensor applications. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.371114
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 2
    Digitale Medien
    Digitale Medien
    Microstructure dependence of electrical properties of (Ba0.5Sr0.5)TiO3 thin films deposited on Pt/SiO2/Si (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5891-5894 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Stoichiometric (Ba0.5Sr0.5)TiO3 (BST) thin films with various thicknesses have been prepared on Pt/SiO2/Si substrates using conventional rf magnetron sputtering method with a ceramic target containing excess BaO and SrO. With increasing film thickness, the grain size of the BST films gradually increased. It was observed that the dielectric constant increased from 348 to 758 when grain size increased from 32 to 82 nm in BST films deposited at 600 °C. The decrease of dielectric constant in thinner BST films was attributed to the initial low dielectric constant layer and small grain size. In the current–voltage curves for BST films, higher leakage current densities and narrower flat regions (hopping conduction region) in the low bias field were obtained with increasing grain size. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363583
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 3
    Digitale Medien
    Digitale Medien
    Mode of Action of the Antibacterial Cecropin B2: A Spectrofluorometric Study (1994)
    s.l. : American Chemical Society
    Biochemistry 33 (1994), S. 10681-10692 
    Details
    ISSN: 1520-4995
    Quelle: ACS Legacy Archives
    Thema: Biologie , Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/bi00201a016
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 4
    Digitale Medien
    Digitale Medien
    RHEOLOGICAL PROPERTIES, WHEY SEPARATION, AND MICROSTRUCTURE IN SET-STYLE YOGURT: EFFECTS OF HEATING TEMPERATURE AND INCUBATION TEMPERATURE (2003)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of texture studies 34 (2003), S. 0 
    Details
    ISSN: 1745-4603
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Werkstoffwissenschaften, Fertigungsverfahren, Fertigung
    Notizen: The effects of heat treatment and incubation temperature on the rheological and microstructural properties of yogurt were studied. A central composite experimental design and response surface methodology were used for data analysis. The rheological properties were determined by dynamic low amplitude oscillation and the amount of spontaneous whey separation was quantified by the volumetric flask test. Confocal scanning laser microscopy was used to examine the gel structure. The storage moduli of yogurts increased with an increase in heating temperature and a decrease in incubation temperature. The maximum loss tangent value during gelation, permeability, and amount of spontaneous whey separation of yogurts increased with a decrease in heating temperature and with an increase in incubation temperature. These parameters indicated an increased possibility for rearrangements, which was confirmed by presence of large pores in the gel network. Second order polynomial models successfully predicted the effects of heating temperature and incubation temperature on the rheological properties, permeability, and whey separation of yogurts. Whey separation was negatively correlated with storage modulus (r= -0.66), and was positively correlated with the maximum loss tangent (r= 0.63) and permeability (r= 0.78). This study demonstrates that weak yogurt gels, which have high loss tangent values, favor rearrangements in the network and the resulting network has larger pores (high permeability) and exhibits greater whey separation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1745-4603.2003.tb01079.x
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 5
    Digitale Medien
    Digitale Medien
    Preparation and Characterization of Pt Counter Electrode with Buffer Layer for Dye-Sensitized Solar Cell (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 119 (Jan. 2007), p. 283-286 
    Details
    ISSN: 1662-9779
    Quelle: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Thema: Physik
    Notizen: Dye-sensitized solar cell (DSSC) is of great interest as one of renewableenergy sources. So far, many investigations related to TiO2 electrode, dye, electrolyte,Pt counter electrode, etc. were carried out. Here, we focus on Pt counter electrode forproviding an enhanced catalytic property and physical stability. Pt has high-conductivityand superior catalytic properties. However, in case of Pt as counter electrode for DSSC,there exists partial problem due to poor adhesion between Pt and FTO glass. In thiswork, we tried to enhance the properties of Pt catalyst by two methods; first, theinsertion of buffer layer under Pt thin film; second, the heat treatment of Pt films. Wereport the effect of buffer layer using Cr and Ti and the effect of heat treatment on Ptelectrode under 400oC. Electrochemical characteristics of Pt electrodes were measuredusing electrochemical impedance spectroscopy and cyclic-voltammetry. A degree ofelectrode reaction, current density, electrode potential and interface resistance, etc werediscussed with measured electrochemical data. In comparison with sputtered Pt counterelectrode with and without buffer layers, heat-treated Pt counter electrode showed goodperformance in terms of the current density and interface resistance properties
    Materialart: Digitale Medien
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.119.283.pdf
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 6
    Digitale Medien
    Digitale Medien
    Five Strip-Type Dye Sensitized Solar Cells with Metal Grid Lines (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 119 (Jan. 2007), p. 315-318 
    Details
    ISSN: 1662-9779
    Quelle: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Thema: Physik
    Notizen: Dye sensitized solar cells (DSSC) have great potential alternative toexpensive conventional solar cells, since high efficiency and relatively simplefabrication process. However, in large size cell, there is a key factor that delayed theentry of such cells in commercial market. Performance of large size cell is lower thansmall size cells, since a carrier loss occurs in high resistive TCO glass substrate. Herewe demonstrate a simple method to reduce resistive loss and efficient collection ofphoto generated carriers via strip type cells with metal grids. Using strip type cells, weconstitute series and parallel type DSSC panels in order to achieve required voltage andcurrent respectively. Stripe cells were prepared from commercial TiO2 powder by screenprinting method. In addition, metal grids were established adjacent to sealant line. Usingthese as unit cell, portable DSSC panels were assembled and I-V performance wascarried out in indoor light condition (fluorescent light, 30mW/cm2) and standardcondition (Pin 100 mW/cm2, AM 1.5)
    Materialart: Digitale Medien
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.119.315.pdf
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 7
    Digitale Medien
    Digitale Medien
    Improvement of Thermal Stability of Nickel Silicide Using Multi-Capping Structure (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 121-123 (Mar. 2007), p. 1261-1264 
    Details
    ISSN: 1662-9779
    Quelle: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Thema: Physik
    Notizen: In this paper, the electrical properties of NiSi have been characterized using multi cappinglayer structure for nano CMOS application. We have investigated the formation and thermal stabilityof Ni silicide using Ni, Ti and TiN capping layers (Ti/Ni/TiN) as a function of Rapid ThermalProcessing (RTP) temperature. It was shown that the NiSi with multi capping layer has lower sheetresistances than that with single capping (TiN) layer. NiSi with multi capping layer also showed muchbetter thermal stability. It was verified that the formation Ni-Ti-Si ternary like layer at the top regionof thhe NiSi results in improvement of thermal stability
    Materialart: Digitale Medien
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.121-123.1261.pdf
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 8
    Digitale Medien
    Digitale Medien
    Novel Ni Germanosilicide Technology Using N-Doped Ni and Ni Stack Structure for Nano CMOS Applications (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 121-123 (Mar. 2007), p. 623-626 
    Details
    ISSN: 1662-9779
    Quelle: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Thema: Physik
    Notizen: In this paper, novel Ni Germanosilicide technology using the 1%-nitrogen doped Ni andpure Ni stack structure has been proposed for nano-scale CMOS technology. The Ni Germanosilicideis formed on the Si0.8Ge0.2 layer which is known as an optimal composition for strained siliconapplication. Proposed structure showed much better thermal stability than pure Ni case. Silicidecharacteristics such as the sheet resistance, the interface uniformity of silicide/SiGe, surfaceroughness, and depth profile of the Ni, Si, and Ge showed little degradation even with the hightemperature post-silicidation annealing at 600 [removed info] for 30 min. Therefore, the proposed method ishighly promising for nano-scale CMOS technology
    Materialart: Digitale Medien
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.121-123.623.pdf
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 9
    Digitale Medien
    Digitale Medien
    Pulsed Laser Deposition and Characterization of InZnO Alloyed Thin Film (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 368-372 (Feb. 2008), p. 308-311 
    Details
    ISSN: 1013-9826
    Quelle: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Thema: Maschinenbau
    Notizen: High-quality In2O3 powder and ZnO powder had been used to make the ceramic target and theatomic ratio of 1 to 1 of indium and zinc had been prepared in this study. The alloyed thin films had beendeposited on sapphire (001) substrates at different temperatures (100–600ºC) by using pulsed laserdeposition (PLD) technique. An x-ray diffractometer and an atomic force microscope were used toinvestigate the structural and morphological properties of the alloyed thin films. It was observed that thealloyed thin films deposited at the temperatures lower than 300ºC were amorphous, and the alloyed thinfilms deposited at high temperatures were crystallized. A spectrophotometer was used to investigate thetransmittances of the alloyed thin films. It was found that the alloyed thin films were of high quality. Theband gap energies of the alloys were calculated by linear fitting the sharp absorption edges of thetransmittance spectra. The Hall measurements were also carried out to identify the electrical properties ofthe thin films
    Materialart: Digitale Medien
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.368-372.308.pdf
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 10
    Digitale Medien
    Digitale Medien
    Gallium and Nitrogen Co-Doped ZnO Thin Films by Pulsed Laser Deposition (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 368-372 (Feb. 2008), p. 322-325 
    Details
    ISSN: 1013-9826
    Quelle: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Thema: Maschinenbau
    Notizen: Pulsed laser deposition (PLD) technique is a very powerful method for fabricating variousoxide thin films due to its native merits. In this study, gallium and nitrogen co-doped ZnO thin films(0.1 at.%) were deposited at different temperatures (100-600ºC) on sapphire (001) substrates by usingPLD. X-ray diffractometer, atomic force microscope, spectrophotometer, and spectrometer were usedto characterize the structural, the morphological and the optical properties of the thin films. Hallmeasurements were also carried out to identify the electrical properties of the thin films
    Materialart: Digitale Medien
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.368-372.322.pdf
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...