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  • 1
    Electronic Resource
    Electronic Resource
    Visible wavelength (6470 A(ring)) GaxIn1−xP/GaAs0.66P0.34 quantum wire heterostructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7124-7129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Utilizing the strain-induced lateral-layer ordering (SILO) process, we have grown GaxIn1−xP multiple quantum wires (MQWR) on ternary GaAs0.66P0.34 substrates using a modified strain-balance mechanism. The resulting [110] lateral modulation occurred with a periodicity of ∼300 A(ring). Two dimensions of quantum confinement were obtained by surrounding the laterally confined GaxIn1−xP regions by layers of higher-energy-gap Al0.15Ga0.53In0.32P in the growth direction. A redshift in the photoluminescence emission was observed as the growth temperature was increased attributed to a stronger lateral composition modulation at the higher growth temperatures. Based on the modified strain-balance mechanism, light-emitting diodes with the GaxIn1−xP MQWR active region were fabricated using the SILO process. Strongly TE-polarized room-temperature electroluminescence from these devices was observed at 6470 A(ring). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363725
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  • 2
    Electronic Resource
    Electronic Resource
    GaxIn1−xAs quantum wire heterostructures formed by strain-induced lateral-layer ordering (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6270-6275 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaxIn1−xAs quantum wire (QWR) arrays were grown on (100) on-axis InP substrates by single-step molecular-beam epitaxy. The QWRs were formed in situ in (GaAs)2/(InAs)2.2 short-period-superlattice (SPS) layers by the strain-induced lateral-layer ordering (SILO) process. An analysis of the cross-sectional and plan-view transmission electron microscopy images, photoluminescence peak energies, and polarization anisotropy has confirmed the QWR nature of these heterostructures. The SILO process occurs over a wide growth temperature range near 500 °C. However, both high and low growth temperatures result in a weaker lateral composition modulation. The strength of the lateral composition modulation is proportional to the total thickness of the SPS quantum-well layers, regardless of the thickness of the individual quantum well. In other words, the magnitude of composition modulation accumulates when growth proceeds. A strain-driven bulk solid-state diffusion model has been proven to be part of the driving force of the SILO process, in addition to a dynamic surface diffusion during growth. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360507
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  • 3
    Electronic Resource
    Electronic Resource
    Defect ordering in epitaxial α-GaN(0001) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 8195-8197 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of nominally undoped epitaxial wurtzite-structure α-GaN films, grown by gas-source molecular-beam epitaxy, plasma-assisted molecular-beam epitaxy, and metalorganic chemical-vapor deposition, has been investigated by transmission electron microscopy (TEM) and high-resolution TEM. The results show that undoped α-GaN films have an ordered point-defect structure. A model of this defect-ordered microstructure, based upon a comparison between experimental results and computer simulations, is proposed. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357873
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  • 4
    Electronic Resource
    Electronic Resource
    Improving the Al-bearing native-oxide/GaAs interface formed by wet oxidation with a thin GaP barrier layer (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2722-2724 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method of improving the Al-bearing compound/GaAs interface against water vapor oxidation has been demonstrated. Amorphous native oxide formed by wet oxidation of an amorphous (Ga, As)/(Al, As) heterostructure on GaAs has exhibited an improved oxide/semiconductor interface with the incorporation of a thin GaP barrier layer of about two monolayers on the GaAs substrate. High resolution transmission electron microscopy shows an interfacial roughness on the order of 15 Å, and an enhancement of photoluminescence of three order of magnitude as compared to the as-grown counterpart without a GaP barrier indicates a great reduction in interface electronic traps. Having an improved interfacial roughness, a reduced interface trap density and an amorphous native oxide, this technique has a potential use in GaAs-based metal-oxide-semiconductor field-effect transistors. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121071
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  • 5
    Electronic Resource
    Electronic Resource
    Formation of amorphous aluminum oxide and gallium oxide on InP substrates by water vapor oxidation (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6932-6934 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous aluminum oxide layers have been successfully produced by oxidizing amorphous (Al, As) compounds using water vapor at temperatures as low as 300 °C. The amorphous (Al, As) was deposited on InP substrates by molecular beam epitaxy at low temperatures (∼100 °C), and was found to have 50% more As than crystalline AlAs. Auger electron spectroscopy depth profiles indicate a complete depletion of As in the amorphous aluminum oxide layer. However, complete removal of As in the amorphous (Ga, As) layer requires a minimum oxidation temperature higher than 300 °C. This method has extended the use of native oxides to lattice-mismatched heterostructures. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368993
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of substrate misorientation on the growth of GaxIn1−xP lateral quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2694-2696 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the effects of misoriented GaAs substrates and varied substrate temperatures on the formation of GaxIn1−xP lateral quantum wells (LQWs) by the strain-induced lateral-layer ordering (SILO) process. Nominally [001] GaAs on-axis substrates, [001] substrates cut 2° off toward the [110] direction, and [001] substrates cut 2° off toward the [1¯10] direction were used to simultaneously grow LQWs. The samples were characterized using plan-view and cross-sectional transmission electron microscopy and polarized photoluminescence spectroscopy. We found that regardless of the substrate misorientation or substrate growth temperature, the SILO process induced LQWs always formed along the [1¯10] direction; primarily determined by the direction of the group-V dimer bonds on the surface during growth. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113491
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  • 7
    Electronic Resource
    Electronic Resource
    GaxIn1−xAs multiple-quantum-wire lasers grown by the strain-induced lateral-layer ordering process (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2220-2222 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Long wavelength (∼1.55 μm) GaxIn1−xAs multiple-quantum-wire (MQWR) lasers have been grown by a single-step molecular beam epitaxy technique. The MQWR heterostructure was fabricated in situ using the strain-induced lateral-layer ordering process. The wire formation was confirmed by cross-sectional transmission electron microscopy and polarized photoluminescence spectroscopy. The 77 K threshold current densities for the MQWR laser diodes with laser cavities along [110] and [1¯10] directions show an anisotropy ratio of ∼10. Lasers with contact stripes aligned perpendicular to the quantum wire direction consistently show a lower threshold current density than those with stripes aligned parallel. The typical threshold current density for the MQWR laser with a stripe perpendicular to the quantum wires is ∼1 kA/cm2 at 300 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114148
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