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  • 1
    Electronic Resource
    Electronic Resource
    Growth of InP on Si substrates by molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 140-142 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of single-crystal InP films on (100) Si substrates by molecular beam epitaxy (MBE) is described. Three different buffer layers were grown by gas-source MBE in order to reduce the density of dislocations created by the 8% InP-Si lattice mismatch. Double-crystal x-ray diffraction revealed that all buffer layers produced large-area single-crystal (100) InP films with the InP lattice tilted towards the 〈100〉 Si directions. A buffer layer of four Inx Ga1−x P/Iny Ga1−y P strained superlattices produced a specular InP film with an estimated dislocation density of 108 –109 cm−2 and a residual stress of less than 5×10−4.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101209
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of high pressure on silicon metal-oxide-semiconductor structures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2328-2331 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The frequency and bias dependence of capacitance in a planar silicon metal-oxide-semiconductor structure has been successfully measured in a diamond anvil high-pressure cell. Electrical contact was achieved with gold ribbon leads passed between one diamond and an insulator-coated pressure seal. Pressure effects on the SiO2 thickness and the silicon surface state profile were separated from changes in lead capacitance and leakage. As the pressure was increased to 30 kbar, SiO2 was compressed 12% normal to the planar surface, but only partially relaxed on a time scale of days after pressure release. The surface state profile, with a minimum at 1×1012 cm−2 eV−1, was essentially unaffected by pressure. Above 30 kbars leakage currents severely limited capacitance interpretation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342822
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Two wavelength optically controlled latch and AND gate (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 636-638 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new optical device which functions either as a gated latch or an AND gate is demonstrated. This device utilizes two different wavelengths of input light and is composed of two heterojunction phototransistors (HPTs) vertically integrated with a light emitting diode. The collector-base regions of the two HPTs are fabricated from different band-gap materials and thus, respond to different wavelengths of input light. The device structure was fabricated from InGaAsP/InP epitaxial layers grown by gas source MBE. The gated latch and AND gate are shown to have an on/off contrast ratio of 12 and 6, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107831
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    The influence of dislocation density on electron mobility in InP films on Si (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1090-1092 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The average electron mobility and dislocation density have been measured as functions of the film thickness in InP films grown on Si substrates by gas-source molecular beam epitaxy. In a region extending about 2 μm from the Si interface, the density of dislocations was found to be very high and clustering of dislocations was observed by transmission electron microscopy. The corresponding mobility was very small. Beyond 2 μm, clustering was not observed, the density of dislocations decreased, and the average mobility increased with increasing film thickness. Thus, the threading dislocations created by the large InP/Si lattice mismatch can significantly degrade the free carrier mobility of the InP film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106353
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    Paper (German National Licenses)
    Fulltext
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