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  • 1
    Electronic Resource
    Electronic Resource
    Incorporation of oxygen into nanocrystalline silicon
    Amsterdam : Elsevier
    Solid State Communications 57 (1986), S. 215-222 
    Details
    ISSN: 0038-1098
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1098(86)90142-0
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    New stable microwave plasma passivated a-Si MIS cells with high open circuit voltage (1988)
    Springer
    Applied physics 46 (1988), S. 31-34 
    Details
    ISSN: 1432-0630
    Keywords: 81.60.-j ; 72.80.Ng ; 84.60.Jt
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A new microwave plasma surface passivation technique has been applied to a-Si∶H type solar cells at various low pressure O2 and H2O atmospheres. Open circuit voltageV OC close to 900 mV and in excess of 900 mV are obtained with Ir, and with Pt, respectively, as continuous barrier metals. The corresponding unpassivated cells (Schottky type solar cells) show considerably lower values ofV OC=650 mV. In contrast to published results involving Ni, Pd, Zr, and other metals as Schottky barriers, we have observed over a period of several months a remarkably good stability of the passivated devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615134
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Influence of plasma excitation frequency fora-Si:H thin film deposition (1987)
    Springer
    Plasma chemistry and plasma processing 7 (1987), S. 267-273 
    Details
    ISSN: 1572-8986
    Keywords: Amorphous silicon ; high-rate deposition ; frequency dependence ; properties ofa-Si
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The effect of plasma excitation frequency on the deposition rate and on the optical and electrical properties of amorphous silicon film is studied over the range 25–150 MHz. Deposition rates as high as 21 Å/sec are obtained at ∼70 MHz, which is a factor of 5–8 larger than typical rates obtained for the conventional 13.56-MHz silane glow-discharge system. Only minor changes occur in the defect density (as measured by the photothermal deflection spectroscopy method), the optical bandgap, and the electrical conductivity over this frequency range. In a preliminaryinterpretation given here, the large variation of the deposition rate as a function of excitation frequency is explained in terms of changes in the electron energy distribution function.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01016517
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    Paper (German National Licenses)
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