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  • 1
    Electronic Resource
    Electronic Resource
    HgCdTe dual-band infrared photodiodes grown by molecular beam epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4620-4622 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the demonstration of an all molecular beam epitaxy HgCdTe bias-selectable dual-band infrared photodetector. The mesa device, an n-p-n three layer HgCdTe heterostructure, was in situ doped with arsenic and indium for p- and n-type doping. The device design is similar to a heterostructure floating base transistor. The feasibility of the two-color bias-switchable detector was demonstrated by obtaining backside illuminated spectrally pure dual-band detection at 77 K. Wavelength cutoff (λco) selection to 5.2 μm with 60% quantum efficiency (QE) was obtained by applying a negative bias of −250 meV, and to λco=7.9 μm with 36% QE by applying a positive bias of 250 meV. The current-voltage characteristics of this device can be described in terms of a simple back-to-back diode model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349099
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  • 2
    Electronic Resource
    Electronic Resource
    Molecular-beam epitaxy growth and in situ arsenic doping of p-on-n HgCdTe heterojunctions (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2143-2148 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper we present, results on the growth of in situ doped p-on-n heterojunctions on HgCdTe epilayers grown on (211)B GaAs substrates by molecular-beam epitaxy (MBE). Long wavelength infrared (LWIR) photodiodes made with these grown junctions are of high performance. The n-type MBE HgCdTe/GaAs alloy epilayer in these structures was grown at Ts=185 °C and it was doped with indium (high 1014 cm−3 range) atoms. This epilayer was directly followed by the growth, at Ts=165 °C, of an arsenic-doped (1017–1018 cm−3 ) HgTe/CdTe superlattice structure which was necessary to incorporate the arsenic atoms as acceptors. After the structure was grown, a Hg annealing step was needed to interdiffuse the superlattice and obtain the arsenic-doped p-type HgCdTe layer above the indium-doped layer. LWIR mesa diodes made with this material have 77 K R0A values of 5×103, 81, 8.5, and 1.1 Ω cm2 for cutoff wavelengths of 8.0, 10.2, 10.8, and 13.5 μm, respectively; the 77 K quantum efficiency values for these diodes were greater than 55%. These recent results represent a significant step toward the demonstration of MBE as a viable growth technique for the in situ fabrication of large area LWIR focal plane arrays.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348741
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    p-i-n HgCdTe photodiodes grown by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2806-2808 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the successful molecular beam epitaxy (MBE) growth of in situ arsenic- and indium-doped p-i-n HgCdTe double heterostructures. High-performance, short-wavelength, infrared (2.09 μm) photodiodes operating at 300 K have been fabricated with these double heterostructures. The observed current-voltage characteristics and quantum efficiency of these diodes can be explained by assuming that the current components are dominated by generation-recombination currents. These photodetectors exhibit quantum efficiencies of 78%. Growth of this kind of in situ doped structures indicates that the HgCdTe MBE technology has matured to the point where doped HgCdTe multilayer heterostructures can be grown and used to fabricate advanced infrared electronic devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104742
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  • 4
    Electronic Resource
    Electronic Resource
    Characteristics of p-n junctions fabricated on Hg1−xCdxTe epilayers grown by molecular beam epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2151-2153 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-n junctions have been fabricated, using the ion implantation technique, on a Hg1−xCdxTe epilayer grown by molecular beam epitaxy (MBE) on a CdTe(111)B substrate. These junctions have been made on as-grown p-type layers, 12 μm thick. The layer (x=0.34) exhibits at 77 K a hole mobility of 800 cm2 V−1 s−1 and a carrier concentration of 3.6×1015 cm−3. The diode dark currents in the diffusion regime and the spectral response attest to the excellent uniformity in composition of the layer. We have also established that in the diffusion regime the data can be explained by the ideal diode equation with electrical parameters measured on the as-grown MBE layers. We consider this an important step in the understanding of the relationship between material parameters and device performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99561
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  • 5
    Electronic Resource
    Electronic Resource
    Infrared diodes fabricated with HgCdTe grown by molecular beam epitaxy on GaAs substrates (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1025-1027 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared photodiodes fabricated with HgCdTe epilayers grown on GaAs substrates by molecular beam epitaxy (MBE) are reported here for the first time. Growth was carried out on the (211)B orientation of GaAs, and the as-grown epilayer (x=0.24) was p type. The n-p junction was formed by Be ion implantation, the resistance-area product (R0 A) at zero bias was 1.4×103 Ω cm2 , the wavelength cutoff was 8.0 μm, and the quantum efficiency was 22%; all were measured at 77 K. We show that in the diffusion regime diodes fabricated with MBE HgCdTe/GaAs have comparable R0 A product values to those made with HgCdTe grown by bulk techniques. This result discloses new possibilities for advanced monolithic HgCdTe devices based on GaAs integrated circuit technology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100787
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  • 6
    Electronic Resource
    Electronic Resource
    Long and middle wavelength infrared photodiodes fabricated with Hg1−x CdxTe grown by molecular-beam epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1747-1753 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Long and middle wavelength infrared (LWIR, MWIR) p+-n photodiodes have been fabricated with Hg1−xCdxTe (0.20〈x〈0.30) grown by molecular-beam epitaxy (MBE). The epilayers were grown on (211)B lattice-matched ZnCdTe substrates. The surface morphology was smooth and free of in-plane twins. The Cd concentration (x) was uniform across the wafer, with standard deviations (Δx) as low as 0.0017. Structural properties were measured by double-crystal x-ray rocking curve and dislocation etching; FWHM values as low as 34 arcsec and etch pit density values as low as 1×105 cm−2 were measured. p+ -n homojunctions were formed by arsenic diffusion; unpassivated mesa photodiodes were fabricated by standard photolithographic techniques. MWIR and LWIR photodiodes fabricated with MBE material exhibited good diode performance, comparable to that obtained on photodiodes fabricated with the more matured technique of liquid-phase epitaxy. 77-K R0A products of the diodes measured were 6.35×107, 22.3, and 1.76 Ω cm2 with cutoff wavelengths of 4.66, 9.96, and 12.90 μm, respectively. The R0A product for a VLWIR photodiode was 1.36×102 Ω cm2 with a cutoff wavelength of 16.23 μm at 35 K. LWIR diodes with no antireflection coating had a quantum efficiency of 48.6%. The present results represent a significant step toward the demonstration of MBE as a viable growth technique for the fabrication of large infrared focal plane arrays.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342925
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  • 7
    Electronic Resource
    Electronic Resource
    Minority carrier lifetime and diffusion length in HgTe/CdTe superlattices by molecular beam epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1196-1198 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient minority carrier lifetime and steady state diffusion length measurements have been performed on n-type HgTe/CdTe superlattices grown on CdZnTe(100) substrates. The n-type (100) superlattice sample shows a lifetime of 90–100 ns at 77–160 K which then decreases with increasing temperature down to 50 ns near 300 K. p-type HgTe/CdTe superlattices show normal behavior for temperature-dependent lifetimes. The measured lifetime is approximately 20 ns at 77 K and increases continuously to 85 ns at 300 K. An independent measurement of minority carrier diffusion length in a p-type HgTe/CdTe superlattice has led to an excellent agreement with a transient lifetime value of 66 ns at 200 K. The minority carrier diffusion length in a direction parallel to the interfaces indicates that the lateral transport properties are not much different from the transport properties of bulk HgCdTe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107592
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  • 8
    Electronic Resource
    Electronic Resource
    Excess tunnel currents in AlGaAs/GaAs multiple quantum well infrared detectors (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1324-1326 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present experimental evidence of excess tunnel current at low temperatures in AlGaAs/GaAs multiple quantum well infrared detectors that is not accounted for by existing theory. Prior discussions of current mechanisms in these detectors only take into account ideal device properties. For quantum well detectors with thick barrier layers, which are useful for infrared detection, the excess tunnel current component possesses the features of sequential resonant tunneling, i.e., temperature independence of the current, and saturation of the current at intermediate bias voltages with negative conductance oscillations. However, the current is orders of magnitude larger than theory predicts. Comparison with data reported by other groups shows the magnitude of the discrepancy is sample dependent. These results suggest that defects play an important role in determining the tunnel current magnitude. This current component is significant because it limits attainable detector performance at low temperatures for applications requiring operation in reduced infrared backgrounds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107331
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of the dislocation density on minority-carrier lifetime in molecular beam epitaxial HgCdTe (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2718-2720 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoconductive minority-carrier lifetime has been measured as a function of temperature and etch-pit density in n-type HgCdTe grown by molecular beam epitaxy with a composition range x=0.22–0.23 to determine the limiting recombination mechanisms, particularly those related to dislocation density. In the extrinsic region at temperatures T〈77 K, the minority-carrier lifetime is limited by Shockley–Read recombination. Strong correlation between minority-carrier lifetime and dislocation density is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105895
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  • 10
    Electronic Resource
    Electronic Resource
    Planar p-on-n HgCdTe heterostructure photovoltaic detectors (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 976-978 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a process to fabricate planar Hg1−yCdyTe/Hg1−xCdxTe (x〈y) heterostructure photodiodes with the p-on-n configuration. The material used for this demonstration was grown by molecular beam epitaxy. The p-on-n planar devices consist of an arsenic-doped p-type epilayer (y=0.28) on top of a long wavelength infrared n-type epilayer (x=0.225, λ=10 μm). The planar junctions were formed by selective pocket diffusion of arsenic deposited by ion implantation. The detailed analysis of the current-voltage characteristics of these diodes as a function of temperature show that they have high performance and that their dark currents are diffusion limited down to 52 K. The results also show that the R0A values for these devices are highly uniform at 77 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108538
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