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  • 1
    Digitale Medien
    Digitale Medien
    Pulsed laser deposition (PLD) — an advanced state for technical applications (1995)
    Springer
    Optical and quantum electronics 27 (1995), S. 1385-1396 
    Details
    ISSN: 1572-817X
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract The conventional thin-film deposition equipment of pulsed laser deposition (PLD) has been modified for the preparation of individual thin solid films and nanometer-layer stacks of uniform thickness across 100-mm substrates. The planar target configuration was replaced by a cylindrical one and the target motion regime has been improved to provide precise spatial control of the plasma plume orientation. During thin-film deposition, substrate translation is preferred instead of the usual rotation technique. With this arrangement the emission characteristic of the plasma source can be computer controlled and the desired coating can be tailored via a stepper-motor-driven manipulator for the desired layer thickness profile across an extended substrate. Thus, for example, a homogeneous film thickness is obtained even for lower target/substrate distances, and an appropriate deposition rate can be maintained. In a second version, this cylinder geometry principle of plasma plume control by target surface morphology is extended to a spatial solution. The hemispherical target surface becomes the basic element for inside-wall coating of tubes or even of more complex hollow bodies. First applications of the equipment are explained and compared with typical results of the conventional technique.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00326490
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  • 2
    Digitale Medien
    Digitale Medien
    Ion beam mixing in Al/Fe multilayered thin films
    Amsterdam : Elsevier
    Vacuum 38 (1988), S. 987-990 
    Details
    ISSN: 0042-207X
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Maschinenbau , Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1016/0042-207X(88)90559-3
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  • 3
    Digitale Medien
    Digitale Medien
    Characterization of ultra smooth interfaces in Mo/Si-multilayers (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 383-388 
    Details
    ISSN: 1618-2650
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie
    Notizen: Abstract The interface structure of Mo/Si-multilayers prepared by Pulsed Laser Deposition (PLD) on Si substrates at room temperature has been investigated. Already the in-situ ellipsometer data acquired during film growth indicate a particular behaviour of this material system that is caused by reaction/diffusion processes of the condensing atoms. MoSix interlayers are formed both at the Mo on Si- and at the Si on Mo-interfaces. The results of multilayer characterization carried out by SNMS and RBS show similar concentration profiles for both types of the interlayers. More detailed information about interface structure and morphology can be provided by HREM investigations. In the TEM micrographs of various multilayers prepared for different laser light wavelengths an improvement of layer stack quality, i.e. formation of abrupt interfaces, with increasing photon energy is observed. Layer stacks having almost ideally smooth interfaces were synthesized by UV-photon ablation. HREM micrographs of these multilayers show a pronounced separation of spacer and absorber layers. The roughness σR of the interfaces between the amorphous Si- and MoSix-layers was determined by image analysis. On the average a level σR ≈ 0.1 nm is found. There is no indication for roughness replication or amplification from interface to interface as it is known from the appropriate products of conventional thin film technologies.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/s0021653530383
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  • 4
    Digitale Medien
    Digitale Medien
    Investigation of the thermal stability of Ni/C multilayers by X-ray methods (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 246-250 
    Details
    ISSN: 1618-2650
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie
    Notizen: Abstract Microstructural properties of Ni/C multilayers prepared by PLD (pulsed laser deposition) have been investigated after heat treatment in vacuum at temperatures in the range of 50° C to 500° C. X-ray diffractometry, X-ray reflectometry, fluorescence EXAFS (extended X-ray absorption fine structure) and HREM (high resolution transmission electron microscopy) have been applied to characterize samples in the initial state and after annealing. The multilayer reflectivity remained unchanged or increased at temperatures below 400° C due to sharpening of the interfaces caused by the formation of α-nickel and nickel carbide. The reflectivity decreased at temperatures above 400° C because of the fragmentation of the nickel layers. It can be shown, that both chemical and mechanical driving forces are responsible for the observed modifications of the initial specimen state.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/s0021653530246
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    Investigation of the thermal stability of Ni/C multilayers by X-ray methods (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 246-250 
    Details
    ISSN: 1618-2650
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie
    Notizen: Abstract Microstructural properties of Ni/C multilayers prepared by PLD (pulsed laser deposition) have been investigated after heat treatment in vacuum at temperatures in the range of 50°C to 500°C. X-ray diffractometry, X-ray reflectometry, fluorescence EXAFS (extended X-ray absorption fine structure) and HREM (high resolution transmission electron microscopy) have been applied to characterize samples in the initial state and after annealing. The multilayer reflectivity remained unchanged or increased at temperatures below 400°C due to sharpening of the interfaces caused by the formation of α-nickel and nickel carbide. The reflectivity decreased at temperatures above 400°C because of the fragmentation of the nickel layers. It can be shown, that both chemical and mechanical driving forces are responsible for the observed modifications of the initial specimen state.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00322045
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    Characterization of ultra smooth interfaces in Mo/Si-multilayers (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 383-388 
    Details
    ISSN: 1618-2650
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie
    Notizen: Abstract The interface structure of Mo/Si-multilayers prepared by Pulsed Laser Deposition (PLD) on Si substrates at room temperature has been investigated. Already the in-situ ellipsometer data acquired during film growth indicate a particular behaviour of this material system that is caused by reaction/diffusion processes of the condensing atoms. MoSix interlayers are formed both at the Mo on Si- and at the Si on Mo-interfaces. The results of multilayer characterization carried out by SNMS and RBS show similar concentration profiles for both types of the interlayers. More detailed information about interface structure and morphology can be provided by HREM investigations. In the TEM micrographs of various multilayers prepared for different laser light wavelengths an improvement of layer stack quality, i.e. formation of abrupt interfaces, with increasing photon energy is observed. Layer stacks having almost ideally smooth interfaces were synthesized by UV-photon ablation. HREM micrographs of these multilayers show a pronounced separation of spacer and absorber layers. The roughness σR of the interfaces between the amorphous Si- and MoSix-layers was determined by image analysis. On the average a level σR ≈ 0.1 nm is found. There is no indication for roughness replication or amplification from interface to interface as it is known from the appropriate products of conventional thin film technologies.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00322074
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  • 7
    Digitale Medien
    Digitale Medien
    A modified plasma source for controlled layer thickness synthesis in laser pulse vapour deposition (LPVD) (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 19-29 
    Details
    ISSN: 1057-9257
    Schlagwort(e): Thin films ; Laser ablation ; X-ray mirrors ; Plasma sources ; UHV deposition equipment ; Ni/C multilayer structures ; SNMS depth profiling ; TEM cross-section ; Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: The conventional thin film deposition equipment of LPVD has been modified for the preparation of nanometre-layer stacks of uniform thickness at reduced target/substrate separation. Therefore the planar target was replaced by a cylindrical one and the target motion regime has been modified.During thin film deposition a substrate translation is preferred instead of the usual rotation technique. With this arrangement the emission characteristic of the plasma source can be computer controlled and tailored via a stepper-motor-driven manipulator for the desired layer thickness profile across an extended substrate. Thus, for example, a homogeneous film thickness is obtained even for lower target/substrate distances, and an appropriate deposition rate can be maintained.First applications of the equipment are explained and compared with typical results of the conventional technique.
    Zusätzliches Material: 11 Ill.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1002/amo.860020104
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