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  • 1
    Electronic Resource
    Electronic Resource
    TEM Investigations on the Structure and Stability of Diffusion Barriers for VLSI Contacts (1991)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 19-20 (Jan. 1991), p. 611-616 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.19-20.611.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Investigations of the Behaviour of Transition Metals in Silicon (1989)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 6-7 (Jan. 1989), p. 49-56 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.6-7.49.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1390-1392 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si, Ge, SiC, and diamond samples were implanted with H2+ at 120–160 keV with 5.0×1016 ions/cm2 (corresponding to 1.0×1017 H+ ions/cm2) and annealed at various temperatures to introduce hydrogen filled microcracks. An effective activation energy was determined for the formation of optically detectable surface blisters from the time required to form such blisters at various temperatures. The measured effective activation energies are close to the respective bond energies in all four materials. The time required to completely split hydrogen implanted layers from bonded silicon substrates and to transfer them onto oxidized silicon wafers is a factor of about 10 longer. Both processes, blister formation and layer splitting, show the same activation energy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118586
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  • 4
    Electronic Resource
    Electronic Resource
    What determines the lateral bonding speed in silicon wafer bonding? (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 863-865 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In silicon wafer bonding, the initial contact area spreads laterally with a typical speed on the order of 10 mm/s. We observed that this lateral bonding speed increases with decreasing ambient pressure, and is independent of the distance of the contact front to the rim of the wafers and independent of wafer thickness. From these results, we conclude that the lateral bonding speed is mainly determined by pressing the ambient gas out between the two wafers from a very localized area close to the propagating bonding front. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115530
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  • 5
    Electronic Resource
    Electronic Resource
    Oxide precipitation at silicon grain boundaries (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 327-329 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxygen precipitates at various grain boundaries in crystalline silicon, formed after prolonged high temperature annealing, grow within a narrow size distribution. This narrow size distribution appears to depend on the specific grain boundary. On the basis of this observation a model is derived which is based on the energy balance between grain boundary energy, Si/SiO2 interface energy, and an additional term describing the energy of the ledges of the faceted precipitates. This model predicts an energy minimum for a defined size of the precipitates. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118405
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  • 6
    Electronic Resource
    Electronic Resource
    Multiple internal reflection spectroscopy of bonded silicon wafers (1995)
    Springer
    Applied physics 61 (1995), S. 101-105 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.35; 68.55; 78.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Interfaces of bonded hydrophilic and hydrophobic wafer pairs are studied by multiple internal reflection spectroscopy after annealing at 1100 °C. Si–H x and SiO–H stretching modes are still present in bonded hydrophilic wafers. Interfaces of bonded hydrophobic wafers, prepared by joining HF-etched surfaces without de-ionized water rinsing, are characterized by the dominance of hydrides (SiH, SiH2, SiH3). Their concentration is about 100 times higher than for bonded hydrophilic wafers. Comparison with the ATR-spectra of HF-treated surfaces showed appreciable shifts in the peak positions indicating that Si–H bonds might be involved in the bonding process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050173
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  • 7
    Electronic Resource
    Electronic Resource
    Multiple internal reflection spectroscopy of bonded silicon wafers (1995)
    Springer
    Applied physics 61 (1995), S. 101-105 
    Details
    ISSN: 1432-0630
    Keywords: 68.35 ; 68.55 ; 78.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Interfaces of bonded hydrophilic and hydrophobic wafer pairs are studied by multiple internal reflection spectroscopy after annealing at 1100°C. Si−Hx and SiO−H stretching modes are still present in bonded hydrophilic wafers. Interfaces of bonded hydrophobic wafers, prepared by joining HF-etched surfaces without defonized water rinsing, are characterized by the dominance of hydrides (SiH, SiH2, SiH3). Their concentration is about 100 times higher than for bonded hydrophilic wafers. Comparison with the ATR-spectra of HF-treated surfaces showed appreciable shifts in the peak positions indicating that Si−H bonds might be involved in the bonding process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538372
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  • 8
    Electronic Resource
    Electronic Resource
    Investigation of the thermal stability of Ni/C multilayers by X-ray methods (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 246-250 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Microstructural properties of Ni/C multilayers prepared by PLD (pulsed laser deposition) have been investigated after heat treatment in vacuum at temperatures in the range of 50°C to 500°C. X-ray diffractometry, X-ray reflectometry, fluorescence EXAFS (extended X-ray absorption fine structure) and HREM (high resolution transmission electron microscopy) have been applied to characterize samples in the initial state and after annealing. The multilayer reflectivity remained unchanged or increased at temperatures below 400°C due to sharpening of the interfaces caused by the formation of α-nickel and nickel carbide. The reflectivity decreased at temperatures above 400°C because of the fragmentation of the nickel layers. It can be shown, that both chemical and mechanical driving forces are responsible for the observed modifications of the initial specimen state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00322045
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  • 9
    Electronic Resource
    Electronic Resource
    Characterization of ultra smooth interfaces in Mo/Si-multilayers (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 383-388 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The interface structure of Mo/Si-multilayers prepared by Pulsed Laser Deposition (PLD) on Si substrates at room temperature has been investigated. Already the in-situ ellipsometer data acquired during film growth indicate a particular behaviour of this material system that is caused by reaction/diffusion processes of the condensing atoms. MoSix interlayers are formed both at the Mo on Si- and at the Si on Mo-interfaces. The results of multilayer characterization carried out by SNMS and RBS show similar concentration profiles for both types of the interlayers. More detailed information about interface structure and morphology can be provided by HREM investigations. In the TEM micrographs of various multilayers prepared for different laser light wavelengths an improvement of layer stack quality, i.e. formation of abrupt interfaces, with increasing photon energy is observed. Layer stacks having almost ideally smooth interfaces were synthesized by UV-photon ablation. HREM micrographs of these multilayers show a pronounced separation of spacer and absorber layers. The roughness σR of the interfaces between the amorphous Si- and MoSix-layers was determined by image analysis. On the average a level σR ≈ 0.1 nm is found. There is no indication for roughness replication or amplification from interface to interface as it is known from the appropriate products of conventional thin film technologies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s0021653530383
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  • 10
    Electronic Resource
    Electronic Resource
    Investigation of the thermal stability of Ni/C multilayers by X-ray methods (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 246-250 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Microstructural properties of Ni/C multilayers prepared by PLD (pulsed laser deposition) have been investigated after heat treatment in vacuum at temperatures in the range of 50° C to 500° C. X-ray diffractometry, X-ray reflectometry, fluorescence EXAFS (extended X-ray absorption fine structure) and HREM (high resolution transmission electron microscopy) have been applied to characterize samples in the initial state and after annealing. The multilayer reflectivity remained unchanged or increased at temperatures below 400° C due to sharpening of the interfaces caused by the formation of α-nickel and nickel carbide. The reflectivity decreased at temperatures above 400° C because of the fragmentation of the nickel layers. It can be shown, that both chemical and mechanical driving forces are responsible for the observed modifications of the initial specimen state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s0021653530246
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