ISSN:
1432-0630
Keywords:
PACS: 68.35; 68.55; 78.30
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract. Interfaces of bonded hydrophilic and hydrophobic wafer pairs are studied by multiple internal reflection spectroscopy after annealing at 1100 °C. Si–H x and SiO–H stretching modes are still present in bonded hydrophilic wafers. Interfaces of bonded hydrophobic wafers, prepared by joining HF-etched surfaces without de-ionized water rinsing, are characterized by the dominance of hydrides (SiH, SiH2, SiH3). Their concentration is about 100 times higher than for bonded hydrophilic wafers. Comparison with the ATR-spectra of HF-treated surfaces showed appreciable shifts in the peak positions indicating that Si–H bonds might be involved in the bonding process.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390050173
