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  • 1
    Electronic Resource
    Electronic Resource
    What determines the lateral bonding speed in silicon wafer bonding? (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 863-865 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In silicon wafer bonding, the initial contact area spreads laterally with a typical speed on the order of 10 mm/s. We observed that this lateral bonding speed increases with decreasing ambient pressure, and is independent of the distance of the contact front to the rim of the wafers and independent of wafer thickness. From these results, we conclude that the lateral bonding speed is mainly determined by pressing the ambient gas out between the two wafers from a very localized area close to the propagating bonding front. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115530
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  • 2
    Electronic Resource
    Electronic Resource
    Onset of blistering in hydrogen-implanted silicon (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 982-984 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The onset of surface blistering in hydrogen-implanted single crystalline silicon was studied. A combination of atomic force microscopy and optical measurements shows that hydrogen-containing platelets grow laterally below silicon surface until they suddenly pop up as surface blisters due to the internal hydrogen pressure after a critical size has been reached. Experimentally and theoretically, the critical size of the onset blisters was found to increase with increasing implantation depth or top layer thickness. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123430
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  • 3
    Electronic Resource
    Electronic Resource
    A "smarter-cut" approach to low temperature silicon layer transfer (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 49-51 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon wafers were first implanted at room temperature by B+ with 5.0×1012 to 5.0×1015 ions/ cm2 at 180 keV, and subsequently implanted by H2〈sup ARRANGE="STAGGER"〉+ with 5.0×1016 ions/cm2 at an energy which locates the H-peak concentration in the silicon wafers at the same position as that of the implanted boron peak. Compared to the H-only implanted samples, the temperature for a B+H coimplanted silicon layer to split from its substrate after wafer bonding during a heat treatment for a given time is reduced significantly. Further reduction of the splitting temperature is accomplished by appropriate prebonding annealing of the B+H coimplanted wafers. Combination of these two effects allows the transfer of a silicon layer from a silicon wafer onto a severely thermally mismatched substrate such as quartz at a temperature as low as 200 °C. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120601
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  • 4
    Electronic Resource
    Electronic Resource
    Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1390-1392 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si, Ge, SiC, and diamond samples were implanted with H2+ at 120–160 keV with 5.0×1016 ions/cm2 (corresponding to 1.0×1017 H+ ions/cm2) and annealed at various temperatures to introduce hydrogen filled microcracks. An effective activation energy was determined for the formation of optically detectable surface blisters from the time required to form such blisters at various temperatures. The measured effective activation energies are close to the respective bond energies in all four materials. The time required to completely split hydrogen implanted layers from bonded silicon substrates and to transfer them onto oxidized silicon wafers is a factor of about 10 longer. Both processes, blister formation and layer splitting, show the same activation energy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118586
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  • 5
    Electronic Resource
    Electronic Resource
    Hydrophobic silicon wafer bonding (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 625-627 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Wafers prepared by an HF dip without a subsequent water rinse were bonded at room temperature and annealed at temperatures up to 1100 °C. Based on substantial differences between bonded hydrophilic and hydrophobic Si wafer pairs in the changes of the interface energy with respect to temperature, secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), we suggest that hydrogen bonding between Si-F and H-Si across two mating wafers is responsible for room temperature bonding of hydrophobic Si wafers. The interface energy of the bonded hydrophobic Si wafer pairs does not change appreciably with time up to 150 °C. This stability of the bonding interface makes reversible room-temperature hydrophobic wafer bonding attractive for the protection of silicon wafer surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111070
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  • 6
    Electronic Resource
    Electronic Resource
    Denuded zone formation in carbon-implanted silicon and its application to device quality silicon-on-insulator preparation (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 970-972 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For producing ultrathin (〈0.1 μm) device quality silicon-on-insulator (SOI) films, commercially available 4-in. diameter (100) SOI wafers with single-crystal layer thickness of 1.5±0.5 μm were carbon-implanted (190 keV and 3×1016 cm−2) followed by bonding to oxidized Si wafers. The buried oxide in the SOI wafers was used as the first etch stop and the second etch was stopped at the implanted carbon peak. The formation of a carbon denuded zone allowed us to obtain ≤900±50 A(ring) SOI films free of carbon precipitation. Since precision polishing to thin one wafer of a bonded pair down to ±0.5 μm in thickness variation is available in industry, it should be possible to start the described SOI process with a bulk Si wafer, rather than an expensive SOI wafer, and obtain similar results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108536
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  • 7
    Electronic Resource
    Electronic Resource
    SEMICONDUCTOR WAFER BONDING (1998)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 28 (1998), S. 215-241 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract When mirror-polished, flat, and clean wafers of almost any material are brought into contact at room temperature, they are locally attracted to each other by van der Waals forces and adhere or bond. This phenomenon is referred to as wafer bonding. The most prominent applications of wafer bonding are silicon-on-insulator (SOI) devices, silicon-based sensors and actuators, as well as optical devices. The basics of wafer-bonding technology are described, including microcleanroom approaches, prevention of interface bubbles, bonding of III-V compounds, low-temperature bonding, ultra-high vacuum bonding, thinning methods such as smart-cut procedures, and twist wafer bonding for compliant substrates. Wafer bonding allows a new degree of freedom in design and fabrication of material combinations that previously would have been excluded because these material combinations cannot be realized by the conventional approach of epitaxial growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.matsci.28.1.215
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  • 8
    Electronic Resource
    Electronic Resource
    Study on si electrostatic and electroquasistatic micromotors
    Amsterdam : Elsevier
    Sensors and Actuators A: Physical 35 (1993), S. 171-174 
    Details
    ISSN: 0924-4247
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0924-4247(93)80147-9
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  • 9
    Electronic Resource
    Electronic Resource
    GaAs piezoelectric modulated resistors
    Amsterdam : Elsevier
    Sensors and Actuators A: Physical 35 (1993), S. 247-254 
    Details
    ISSN: 0924-4247
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0924-4247(93)80163-B
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  • 10
    Electronic Resource
    Electronic Resource
    A novel bonding technology for GaAs sensors
    Amsterdam : Elsevier
    Sensors and Actuators A: Physical 21 (1990), S. 40-42 
    Details
    ISSN: 0924-4247
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0924-4247(90)85007-Q
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