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Digitale Medien

Multiple internal reflection spectroscopy of bonded silicon wafers (1995)

Reiche, M. ; Hopfe, S. ; Gösele, U. ; [weitere]

Springer

Applied physics 61 (1995), S. 101-105

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Details

ISSN: 1432-0630

Schlagwort(e): 68.35 ; 68.55 ; 78.30

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract Interfaces of bonded hydrophilic and hydrophobic wafer pairs are studied by multiple internal reflection spectroscopy after annealing at 1100°C. Si−Hx and SiO−H stretching modes are still present in bonded hydrophilic wafers. Interfaces of bonded hydrophobic wafers, prepared by joining HF-etched surfaces without defonized water rinsing, are characterized by the dominance of hydrides (SiH, SiH2, SiH3). Their concentration is about 100 times higher than for bonded hydrophilic wafers. Comparison with the ATR-spectra of HF-treated surfaces showed appreciable shifts in the peak positions indicating that Si−H bonds might be involved in the bonding process.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF01538372

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