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  • 1
    Electronic Resource
    Electronic Resource
    Morphology of platinum silicide films prepared by conventional and rapid thermal annealing and deep levels induced in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3109-3114 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron microscopic studies and the electrical properties of Pt contacts on n-type Si annealed by conventional furnace and rapid thermal annealing (RTA) were investigated with scanning electron microscopy, transmission electron microscopy, x-ray analysis, capacitance-voltage, and deep-level transient spectroscopy measurements. An incomplete reaction between Pt and Si is observed after furnace annealing at 550 °C due to the presence of oxygen in the ambient. An almost complete reaction between Pt and Si is achieved after silicidation by RTA at 550 °C. An acceptorlike level located 0.11 eV below the conduction-band edge with a concentration of 2×1013 cm−3 is detected only after furnace annealing at 550 °C. Silicidation by RTA at 550 °C does not introduce traps in the Si band gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349289
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of magnetron sputtering deposited thin films of TiN for use as a metal electrode on TiN/SiO2/Si metal–oxide–semiconductor devices (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7192-7196 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Titanium nitride (TiN) thin films were deposited by dc magnetron sputtering on SiO2/n-Si substrates in order to study their use as gate electrodes in metal–oxide–semiconductor (MOS) devices. Rutherford backscattering spectroscopy was used to determine the composition of the films and the results were correlated to those obtained by electrical measurements of the constructed MOS devices. Oxygen contamination of the TiN layers was observed, with percentage and spatial variations depending on the various deposition parameters such as the deposition temperature and the substrate bias. The best electrical performance was achieved for devices where the exposed TiN surface had low oxygen contamination. From these samples, the TiNx–Si barrier height was calculated to be equal to 0.52 eV. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1322068
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Charge carrier response time in sputtered a-C/n-Si heterojunctions (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2381-2383 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous carbon (a-C)/n-Si heterojunctions were developed by rf magnetron sputtering from a carbon target on Si(100) n-type substrates kept at room temperature. Subsequent metallization by the deposition of sputtered TiN on top of the carbon films resulted in the creation of effective heterojunction devices as shown by electrical characterization. The electrical performance of the devices was further investigated by admittance spectroscopy, allowing the calculation of the charge carrier response time which was found to be of the order of 10−6 s at room temperature, the lower value reported so far when compared to similar values reported for chemically vapor deposited films. These results showed that the devices were suitable for use in fast electronics working in hard environments. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1404403
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical characterization of TiN/a-C/Si devices grown by magnetron sputtering at room temperature (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1682-1684 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous carbon (α-C) films were deposited on Si substrates by magnetron sputtering at room temperature, followed by a deposition of TiN on top of the carbon films to form heterojunction devices. The electrical properties of the TiN/α–C/Si devices were characterized by capacitance–voltage, conductance–voltage, and current–voltage measurements as a function of temperature. The results showed that the devices behaved like metal–insulator–semiconductor devices at low temperatures, while at higher temperatures, the carbon films exhibited a high internal conductivity and the overall performance was similar to that of heterojunction devices. The conductivity was adequately modeled and found to follow the thermionic field emission model. The TiN exhibited an excellent behavior as a metallic electrode of the devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1352658
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    Paper (German National Licenses)
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