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  • 1
    Electronic Resource
    Electronic Resource
    Erratum: "Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors" [J. Appl. Phys. 86, 4600 (1999)] (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1588-1588 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372060
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical and noise properties of thin-film transistors on very thin excimer laser annealed polycrystalline silicon films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3684-3686 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin-film transistors, fabricated on polycrystalline silicon films prepared by combined solid phase crystallization of amorphous silicon and excimer laser annealing processes, have been investigated by electrical and low frequency noise measurements in relation to the active layer thickness and the laser energy density. The device performance is improved with increasing the laser energy density until a critical value where the film is completely melted. By decreasing the active layer thickness from 50 to 25 nm, although the subthreshold characteristics are improved, the electron mobility and the threshold voltage are degraded. The noise data indicate that the degradation is related to electron trapping in both gate and substrate oxide interface traps. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123221
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  • 3
    Electronic Resource
    Electronic Resource
    Study of leakage current in n-channel and p-channel polycrystalline silicon thin-film transistors by conduction and low frequency noise measurements (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4095-4101 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The off-state current in n- and p-channel polycrystalline silicon thin-film transistors (polysilicon TFTs) is investigated systematically by conduction measurements at various temperatures and low-frequency noise measurements at room temperature. It is demonstrated that the leakage current is controlled by the reverse biased drain junction. The main conduction mechanisms are due to thermal generation at low electric fields and Poole–Frenkel accompanied by thermionic filed emission at high electric fields. The leakage current is correlated with the traps present in the polysilicon bulk and at the gate oxide/polysilicon interface which are estimated from the on-state current activation energy data. Analysis of the leakage current noise spectral density confirms that deep levels with uniform energy distribution in the silicon band gap are the main factors in determining the leakage current. The density of deep levels determined from noise analysis is in agreement with the value obtained from conductance activation energy analysis. The substantially lower leakage current observed in the n-channel polysilicon TFT is explained by the development of positive fixed charges at the interface near the drain junction which suppress the electric field. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365720
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4600-4606 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and electrical properties of excimer laser annealed polycrystalline silicon thin-film transistors (polysilicon TFTs) are investigated in relation to the laser energy density. The devices were fabricated on 50 nm thick polysilicon films prepared by excimer laser crystallization (ELA) of amorphous silicon or by a combined solid phase crystallization (SPC) and ELA process. The structural properties of the polysilicon films have been investigated by transmission electron microscopy analysis. The effective density of states distributions in the polysilicon films and in the oxide traps near the oxide/polysilicon interface have been determined from low frequency noise measurements. The TFT performance parameters are compared with respect to their correlation with the structural properties of the polysilicon films and their electrically active defects, the basic variables being the starting material (amorphous silicon or SPC polysilicon) and the laser energy density. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371409
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  • 5
    Electronic Resource
    Electronic Resource
    Dimension scaling of low frequency noise in the drain current of polycrystalline silicon thin-film transistors (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 7083-7086 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental results of low frequency noise in polycrystalline silicon thin-film transistors (polysilicon TFTs) with varying gate dimensions (constant gate width W and varying gate length L) are presented. The power spectral density of the drain current fluctuations SI was found to depend linearly on the inverse of the effective gate area Ag,eff which is related to the gate area W×L and the number of grains present within the transistor channel. This result implies localization of the low frequency noise sources on the gate oxide-polysilicon interface and on the grain boundaries. The 1/Ag,eff scaling law must be taken into account for correct estimation of trap densities in polysilicon TFTs. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371721
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  • 6
    Electronic Resource
    Electronic Resource
    Investigation of noise sources in platinum silicide Schottky barrier diodes (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1468-1470 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-frequency noise measurements have been carried out in platinum silicide Schottky diodes on n-type silicon in the forward conduction regime and with the forward current IF as a parameter. The power spectral density of the current fluctuations shows a 1/f behavior and is proportional to IFβ (with 1〈β≤2). The experimental noise data have been successfully explained by an existing model of the random walk of electrons via the interface states, modified by taking into account the Schottky barrier inhomogeneity across the interface. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1454208
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  • 7
    Electronic Resource
    Electronic Resource
    Charge carrier response time in sputtered a-C/n-Si heterojunctions (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2381-2383 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous carbon (a-C)/n-Si heterojunctions were developed by rf magnetron sputtering from a carbon target on Si(100) n-type substrates kept at room temperature. Subsequent metallization by the deposition of sputtered TiN on top of the carbon films resulted in the creation of effective heterojunction devices as shown by electrical characterization. The electrical performance of the devices was further investigated by admittance spectroscopy, allowing the calculation of the charge carrier response time which was found to be of the order of 10−6 s at room temperature, the lower value reported so far when compared to similar values reported for chemically vapor deposited films. These results showed that the devices were suitable for use in fast electronics working in hard environments. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1404403
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical characterization of TiN/a-C/Si devices grown by magnetron sputtering at room temperature (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1682-1684 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous carbon (α-C) films were deposited on Si substrates by magnetron sputtering at room temperature, followed by a deposition of TiN on top of the carbon films to form heterojunction devices. The electrical properties of the TiN/α–C/Si devices were characterized by capacitance–voltage, conductance–voltage, and current–voltage measurements as a function of temperature. The results showed that the devices behaved like metal–insulator–semiconductor devices at low temperatures, while at higher temperatures, the carbon films exhibited a high internal conductivity and the overall performance was similar to that of heterojunction devices. The conductivity was adequately modeled and found to follow the thermionic field emission model. The TiN exhibited an excellent behavior as a metallic electrode of the devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1352658
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  • 9
    Electronic Resource
    Electronic Resource
    Empirical relationship between low-frequency drain current noise and grain-boundary potential barrier height in high-temperature-processed polycrystalline silicon thin-film transistors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 118-120 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relationship between low-frequency drain current noise spectral density SI and grain-boundary potential barrier height Vb is investigated in high-temperature-processed polycrystalline silicon thin-film transistors. It is demonstrated that a general empirical relationship exists between SI and Vb indicating that the noise sources are located at the grain boundaries. The implications of the obtained relationship between SI and Vb from the practical viewpoint are discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125675
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  • 10
    Electronic Resource
    Electronic Resource
    Threshold voltage of excimer-laser-annealed polycrystalline silicon thin-film transistors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2442-2444 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on experimental studies of n-channel excimer-laser-annealed polycrystalline silicon thin-film transistors with gate ratio width/length varying from 0.5 to 2.5, we propose a reliable method to determine the threshold voltage Vt from linear extrapolation of the transconductance to zero. The results reveal that the determined values of Vt are independent of the device geometry and the applied drain voltage in the linear region, in contrast with the drain current linear extrapolation method. The values of Vt are correlated with the density of the total trap states derived from the subthreshold gate swing voltage. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126370
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