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1

Digitale Medien

Electrical and noise properties of thin-film transistors on very thin excimer laser annealed polycrystalline silicon films (1999)

Angelis, C. T. ; Dimitriadis, C. A.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 74 (1999), S. 3684-3686

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Thin-film transistors, fabricated on polycrystalline silicon films prepared by combined solid phase crystallization of amorphous silicon and excimer laser annealing processes, have been investigated by electrical and low frequency noise measurements in relation to the active layer thickness and the laser energy density. The device performance is improved with increasing the laser energy density until a critical value where the film is completely melted. By decreasing the active layer thickness from 50 to 25 nm, although the subthreshold characteristics are improved, the electron mobility and the threshold voltage are degraded. The noise data indicate that the degradation is related to electron trapping in both gate and substrate oxide interface traps. © 1999 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.123221

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2

Digitale Medien

Study of leakage current in n-channel and p-channel polycrystalline silicon thin-film transistors by conduction and low frequency noise measurements (1997)

Angelis, C. T.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 82 (1997), S. 4095-4101

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The off-state current in n- and p-channel polycrystalline silicon thin-film transistors (polysilicon TFTs) is investigated systematically by conduction measurements at various temperatures and low-frequency noise measurements at room temperature. It is demonstrated that the leakage current is controlled by the reverse biased drain junction. The main conduction mechanisms are due to thermal generation at low electric fields and Poole–Frenkel accompanied by thermionic filed emission at high electric fields. The leakage current is correlated with the traps present in the polysilicon bulk and at the gate oxide/polysilicon interface which are estimated from the on-state current activation energy data. Analysis of the leakage current noise spectral density confirms that deep levels with uniform energy distribution in the silicon band gap are the main factors in determining the leakage current. The density of deep levels determined from noise analysis is in agreement with the value obtained from conductance activation energy analysis. The substantially lower leakage current observed in the n-channel polysilicon TFT is explained by the development of positive fixed charges at the interface near the drain junction which suppress the electric field. © 1997 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.365720

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3

Digitale Medien

Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors (1999)

Angelis, C. T. ; Dimitriadis, C. A.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 86 (1999), S. 4600-4606

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The structural and electrical properties of excimer laser annealed polycrystalline silicon thin-film transistors (polysilicon TFTs) are investigated in relation to the laser energy density. The devices were fabricated on 50 nm thick polysilicon films prepared by excimer laser crystallization (ELA) of amorphous silicon or by a combined solid phase crystallization (SPC) and ELA process. The structural properties of the polysilicon films have been investigated by transmission electron microscopy analysis. The effective density of states distributions in the polysilicon films and in the oxide traps near the oxide/polysilicon interface have been determined from low frequency noise measurements. The TFT performance parameters are compared with respect to their correlation with the structural properties of the polysilicon films and their electrically active defects, the basic variables being the starting material (amorphous silicon or SPC polysilicon) and the laser energy density. © 1999 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.371409

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4

Digitale Medien

Dimension scaling of low frequency noise in the drain current of polycrystalline silicon thin-film transistors (1999)

Angelis, C. T. ; Dimitriadis, C. A.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 86 (1999), S. 7083-7086

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Experimental results of low frequency noise in polycrystalline silicon thin-film transistors (polysilicon TFTs) with varying gate dimensions (constant gate width W and varying gate length L) are presented. The power spectral density of the drain current fluctuations SI was found to depend linearly on the inverse of the effective gate area Ag,eff which is related to the gate area W×L and the number of grains present within the transistor channel. This result implies localization of the low frequency noise sources on the gate oxide-polysilicon interface and on the grain boundaries. The 1/Ag,eff scaling law must be taken into account for correct estimation of trap densities in polysilicon TFTs. © 1999 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.371721

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