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  • 1
    Electronic Resource
    Electronic Resource
    A model for the determination of the solid composition of ternary III-V and II-VI metalorganic chemical vapor deposition epilayers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 871-873 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple kinetic model for the metalorganic chemical vapor deposition growth of ternary III-V and II-VI epilayers denoted by AxC1−xB, is presented. The model yields the relationship between the solid composition x of the epilayer and the gas-phase concentrations of the constituents in various limiting cases. The solid composition x is given by x=(1+α−1×CGMC/CGMA)−1 =[1+α−1(1−Z−1)]−1 where α is a fitting parameter determined by the process parameters, CGMA and CGMC are the gas-phase concentrations of the metalorganic sources of A and C, respectively. The gas-phase composition Z is defined by Z=CGMA/(CGMA +CGMC). The predictions of the model are compared with measured data. The data points are calculated with one fitting parameter α, indicating the validity of the model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346773
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  • 2
    Electronic Resource
    Electronic Resource
    On the evolution of GaInAs/GaAs strained epitaxial layers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1744-1747 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We find that in a highly lattice-mismatched heteroepitaxial growth, as critical thickness is reached, defects are formed within a thin layer at the surface and do not necessarily propagate to the interface. At that thin layer the strain is locally decreased resulting in a larger lattice parameter, which persists until the next step takes place. This procedure is inferred from the Raman scattering data of InxGa1−xAs/GaAs. Disorder induced Raman spectroscopy in a scattering forbidden configuration is shown to be an extremely sensitive tool for observing this stepwise release of the strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351207
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  • 3
    Electronic Resource
    Electronic Resource
    Strain buildup in InxGa1−xAs partially relaxed quantum well (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 874-879 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Partially relaxed InxGa1−xAs strained-well layers of a fixed thickness above critical, grown on GaAs and capped by GaAs of different thicknesses, were studied by Raman spectroscopy in conjunction with Auger electron spectroscopy and secondary-ion-mass spectroscopy. It is shown that further strain relaxation of the well takes place with increasing GaAs capping thickness initially, but for cap thickness above 100 A(ring) this trend is reversed. This puzzling result is explained by the 3D growth mode. The presence of a high concentration of dislocations intensifies the diffusion of indium to the extent that the two layers become indistinguishable by all three methods. This diffusion of indium is severely reduced with increasing strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357763
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of strained quantum wells by high-resolution x-ray diffraction (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1869-1875 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The GaAs/GaInAs/GaAs quantum-well structures grown by metalorganic chemical vapor deposition were studied using high-resolution x-ray diffractometry and photoluminescence techniques. Diffraction profiles were fitted to experimental rocking curves by a simulation procedure, based on the direct summation of scattered waves. The analytical expressions obtained shed light on various relevant parameters and, together with a specific growth procedure, permitted determination of the thickness and composition of strained quantum wells. By following fine interference effects in the x-ray diffraction spectra quantum wells as thin as 1.4 nm could be characterized. In order to check the validity of the procedure, the obtained quantum-well parameters were used to calculate the peak positions in luminescence spectra and good agreement with experimental data was found. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361075
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  • 5
    Electronic Resource
    Electronic Resource
    Phonon study of strained InGaAs layers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 400-402 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Relaxation of strain in InxGa1−xAs layers on GaAs is studied by Raman spectroscopy for layers below and above the critical thickness. We show that the enormous strain of the perfect epitaxial layer is released stepwise with the thickness. It is suggested that dislocations formed at the layer surface impose the growth of the next sublayer of partially released strain, preserving the former grown sublayer of higher strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104647
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  • 6
    Electronic Resource
    Electronic Resource
    n-type delta-doped strained quantum well lasers for improved temperature-dependent performance (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1484-1486 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that the incorporation of Te n-type δ doping close to a single-strained InGaAs/GaAs quantum well improves the temperature stability of the laser, as indicated by the higher characteristic temperature and by the reduced sensitivity of the threshold current to temperature variations. This improvement results from the strong coupling between the quantum well and the δ-doping well. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120599
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  • 7
    Electronic Resource
    Electronic Resource
    GaInP/GaP partially ordered layer type-I strained quantum well (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4236-4238 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strong photoluminescence is observed in strained GaInP quantum wells (QW) grown on GaP. Variable temperature photoluminescence indicates that the pseudomorphic quantum well consists of type-I regions of ordered GaInP and type-II regions of disordered GaInP. Observation of photoluminescence at room temperature suggests that this QW may be useful as an active layer for laser structures grown on GaP. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116956
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  • 8
    Electronic Resource
    Electronic Resource
    n-type delta-doped quantum well lasers with extremely low transparency current density (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2043-2045 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that placing an n-type Te δ doping aside a single strained quantum well (QW) is an efficient way to control the initial carrier concentration in the QW and thus to lower transparency current density, Jtr, while preserving low internal losses. This is in contrast with uniform doping of the active area. Jtr of 11.3 A/cm〈thin〉2 and threshold current density of 54.4 A/cm2, which are both the lowest values reported to date for strained InxGa1−xAs/GaAs semiconductor lasers, were obtained. A somewhat higher injection efficiency is obtained when the energy levels are adjusted so that the electrons tunnel from the delta well directly into the QW. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116297
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  • 9
    Electronic Resource
    Electronic Resource
    Long-lived InGaAs quantum well lasers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1861-1862 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pseudomorphic InGaAs lasers with cw operating lifetimes exceeding 5000 h are reported for the first time. The device structure, grown by low-pressure metalorganic chemical vapor deposition, incorporates a single In0.37Ga0.63As strained-layer quantum well in a GaAs/AlGaAs graded-index separate confinement heterostructure. These devices are remarkable for their immunity to sudden failure and for their (gradual) degradation rates which are comparable to the best GaAs lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101260
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  • 10
    Electronic Resource
    Electronic Resource
    Distribution of atoms in mixed III-V compounds (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 966-968 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In mixed III-V semiconductors, AB1−xCx, the atoms are supposed to be randomly distributed. Using resonant Raman scattering as a probe, we determined the departure from a random distribution inside small volumes of the order of V(approximately-equal-to)(50 A(ring))3. It has been shown that the frequency splitting of the vibrational modes in the allowed and forbidden configuration can be attributed to the deviation from the nominal composition x within the characteristic volume of the electron-phonon interaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340043
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