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  • 1
    Electronic Resource
    Electronic Resource
    Gold implantation in n-type silicon: Entropy factor and diffusion studies (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1601-1605 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rutherford backscattering spectrometry and spreading resistance techniques have been used to determine the concentration profiles of gold implanted and diffused in n-type silicon. Diffusion has been performed at 1243 K for times ranging between 1 and 20 h in a dry-nitrogen flux. Resistivity profiles were transformed into concentration profiles by solving the charge balance equation. The entropy factor for the ionization of gold acceptor level was determined to be 50±5. By using this value and solving the charge balance equation we have calculated the silicon resistivity versus gold concentration (and therefore minority-carrier lifetime) curves as a function of the resistivity of starting material. Experimental gold concentration profiles were compared to the profiles obtained by numerical solution of the diffusion equation for gold in silicon. The measured diffusion coefficients coincide with the values determined for p-type material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346638
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  • 2
    Electronic Resource
    Electronic Resource
    Precipitation of arsenic diffused into silicon from a TiSi2 source (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 726-731 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion into a p-type Si substrate of arsenic ions implanted into TiSi2 layers has been investigated for several thermal diffusion treatments in the 900–1100 °C temperature range. The drive-in was performed using either a rapid thermal annealing system or a traditional furnace. Shallow (20–80-nm depth) junctions were obtained with a high (1019–1020/cm3) dopant concentration at the silicide-silicon interface. The amount of diffused arsenic atoms measured by Rutherford backscattering spectrometry increases linearly with the square root of the annealing time. A similar relation was found for the amount of electrically active arsenic, as measured by Van der Pauw structure in combination with anodic oxidation. The two quantities differ and the inactive dopants precipitate in the diffused layer as seen by transmission electron microscopy. This behavior might be associated to the high tensile stress induced by the silicide layer on the surface silicon region and to its influence on the solid solubility and clustering of arsenic atoms. Precipitates are easily dissolved after thermal annealing in the absence of the TiSi2 layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347357
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  • 3
    Electronic Resource
    Electronic Resource
    Control of gold concentration profiles in silicon by ion implantation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1350-1354 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of ion-implanted gold in a silicon single crystal has been studied by the spreading resistance technique. In this work we investigate both unidimensional and bidimensional diffusion across the wafer and along the wafer surface, respectively, by using limited or unlimited gold sources. We will show that by using ion implantation of gold it is possible to produce unique concentration profiles through the fine control of the amount of gold atoms in the diffusion source; both depth and surface profiles can be tailored. All the measured profiles are in good agreement with the theoretical prediction of the kick-out mechanism for gold diffusion in silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347271
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  • 4
    Electronic Resource
    Electronic Resource
    Entropy factor of donor level in gold implanted silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 558-560 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rutherford backscattering spectrometry and spreading resistance techniques have been used to determine the concentration profiles of gold implanted on and diffused in p-type silicon. The measurement of the gold concentration is possible by the solution of the charge neutrality condition and thus it requires the determination of the entropy factor X associated with the ionization of the gold donor level. The value of 28±2 compares well with the latest determination of X obtained by using rather complex techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99416
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  • 5
    Electronic Resource
    Electronic Resource
    Ion-induced epitaxial growth of chemical vapor deposited Si layers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 712-714 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin layers of Si were chemical vapor deposited onto as-received 〈100〉 p-type Si wafers. The samples were subsequently implanted with 1×1015/cm2, 80 keV As. The native oxide film impedes the growth even at 800 °C, 1 h; instead irradiation with 600 keV Kr++ at 450 °C causes the epitaxial growth of the entire deposited and amorphized Si layer. The sheet resistance of these As-doped layers (130 Ω/(D'Alembertian)) coincides with that of samples in which the amorphous layer was obtained by As ion implantation only. The value is at least ten times lower than that of the polycrystalline layer doped with the same amount of As.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99355
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  • 6
    Electronic Resource
    Electronic Resource
    Influence of a thin interfacial oxide layer on the ion beam assisted epitaxial crystallization of deposited Si (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2605-2607 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial crystallization of chemical vapor deposited Si layers on 〈100〉 Si substrates with a thin interfacial oxide layer was induced by a 600 keV Kr beam in the temperature range 350–500 °C. During irradiation the single crystal-amorphous interface velocity was measured in situ by monitoring the reflectivity of He-Ne laser light. We show that a critical irradiation dose is needed before the interfacial oxide breaks down and epitaxial regrowth can take place. This critical dose depends exponentially on the reciprocal temperature with an activation energy of 0.44 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100538
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  • 7
    Electronic Resource
    Electronic Resource
    Diffusion of ion-implanted gold in p-type silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6291-6295 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report detailed measurements of gold concentration profiles in 〈100〉, p-type silicon. The gold has been introduced by ion implantation and diffused in the temperature range 1073–1473 K and for times ranging from 60 s to 100 h. The resistivity profiles have been converted into gold concentration profiles by using the recently measured value of the entropy factor for the ionization of the gold donor level. The measured profiles and their time dependence can be accounted for by the kick-out diffusion mechanism. The activation energies for the effective diffusion coefficient and for the gold substitutional concentration are 1.7±0.1 and 1.6±0.1 eV, respectively. The resulting flux of silicon self-interstitials is thus described by an activation energy of 3.3±0.1 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342087
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  • 8
    Electronic Resource
    Electronic Resource
    Ion beam annealing during high current density implants of phosphorus into silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 4038-4042 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The damage left by high current density∼10 μA/cm2 implants of 120-keV P+ into 4-in. (500-μm-thick) and 5-in. (600-μm-thick) Si wafers of 〈100〉 orientation has been measured by 2.0-MeV He backscattering in combination with the channeling effect technique. The fluences ranged between 1 and 7.5×1015/cm2. The amount of disorder is highest at 1×1015/cm2 and then decreases with fluence. The annealing of the amorphous layer takes place by the movement of two and one amorphous–single crystal interfaces for the 500- and 600-μm-thick wafers, respectively. The experimental data are compared with a beam annealing model based on the temperature-rise profile, the amount of point defects generated by the ion in the collision cascade volume, and the assumption of a regrowth process governed by an activation energy of 0.25 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337038
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  • 9
    Electronic Resource
    Electronic Resource
    Size effects in the epitaxial realignment of polycrystalline silicon films onto Si substrates (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1895-1897 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial realignment of As-doped polycrystalline silicon layers has been investigated by varying the dimensions of the contact area with the crystalline silicon substrate. Rectangular strips of width in the 0.2–100 μm range and length in the mm range were used. In the 1–100 μm strips the realignment proceeds by the two-dimensional growth of epitaxial columns, while in the 0.2–0.3 μm strips by the one-dimensional growth. The experimental realigned fractions quantitatively follow the trend predicted by the classical model of nucleation and growth in two and one dimension, respectively. The growth kinetics is slowed down in the small width geometry and the thermal budget to realign the films increases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109535
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  • 10
    Electronic Resource
    Electronic Resource
    Titanium silicide as a diffusion source for arsenic (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7174-7176 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The matter transport of arsenic ions implanted into titanium silicide layers has been investigated after thermal diffusion treatment in the 800 °C–1100 °C temperature range. The arsenic atoms redistribute between TiSi2 and Si with a segregation coefficient depending on temperature. The diffused amount increases linearly with the square root of annealing time at 1100 °C. The n-doped shallow Si layer has a quite good electrical activity with a mean resistivity of about 1.2 MΩ cm. The leakage current of the reverse-biased n+/p junction is instead quite high. Stacking faults are observed in the diffused layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344550
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