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  • 1
    Electronic Resource
    Electronic Resource
    Anomalous rf magnetoresistance in copper at 4 K (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2266-2268 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the effect of a magnetic field on the surface resistance of polycrystalline Cu at f=1.2 GHz and at 4.4 K; under these conditions the surface resistance is well into the anomalous skin effect regime but has not reached its limiting value. We find that the transverse and longitudinal magnetoresistance are an order of magnitude smaller than the dc magnetoresistance and depend quadratically on the field. At low fields we observe a decrease in surface resistance with increasing field which can be interpreted as a size effect of the rf surface current, but is also typical of superconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99509
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  • 2
    Electronic Resource
    Electronic Resource
    Rechargeable E' centers in sputter-deposited silicon dioxide films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2118-2120 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electron trapping instability in silicon dioxide films sputtered onto silicon substrates was analyzed by metal-oxide-semiconductor electrical methods and electron paramagnetic resonance (EPR), and was compared with an E' defect model from molecular orbital cluster calculations. This comparison indicates that an E' defect may well be responsible for the observed trapping instability, since electrically measured trap filling and emptying was quantitatively correlated with a reversible variation in the EPR signal magnitude. The specific model proposed for this defect is a "surface-like'' or hemi-E' center, O3≡Si−, which upon loss of an electron becomes O3≡Si+ and relaxes towards a planar configuration. The relaxation energy associated with the restoration of the original configuration is manifested as a hysteresis in the electrical trap filling and emptying cycle.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101512
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  • 3
    Electronic Resource
    Electronic Resource
    Nitrogen depletion during oxidation in N2O (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 374-376 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of nitrogen in oxides has been studied after furnace oxidation in N2O at 900 °C. We observe that nitrogen is removed from the oxide bulk during oxidation in N2O, while simultaneously nitrogen is incorporated at the growing Si–SiO2 interface. This results suggests that nitrogen incorporation involves a dynamic equilibrium between competing processes which causes both nitrogen incorporation and depletion. A chemical model for nitrogen removal is proposed based on a reaction with NO. Reaction energies, estimated from semiempirical quantum-mechanical calculations, support the proposed model. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114633
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  • 4
    Electronic Resource
    Electronic Resource
    A NEW METHOD FOR SAMPLING SNOW MELT AND RAINFALL IN FORESTS (1980)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of the American Water Resources Association 16 (1980), S. 0 
    Details
    ISSN: 1752-1688
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Architecture, Civil Engineering, Surveying , Geography
    Notes: : Monitoring snow melt rates in high elevation, high snowfall forest stands is difficult mechanically and often impossible due to winter inaccessibility. A method for continuous unattended measurements of melt rate is described. With individual lysimeter pans connected to a common collector, any reasonable number of pans can be installed at each site.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1752-1688.1980.tb02512.x
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  • 5
    Electronic Resource
    Electronic Resource
    High-resolution vibrational spectroscopy of the OH− ion in an Mg-related defect in LiF and NaF (1993)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 15 (1993), S. 415-428 
    Details
    ISSN: 0392-6737
    Keywords: Defects in crystals ; Localized modes ; Other nonmetallic inorganics
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary High-resolution (0.05 cm−1) FTIR spectroscopy in the range (9÷300) K is applied to study the vibrational (stretching, bending and combination) modes of OH− (and its isotopic substitution with OD−) perturbed by a neighbouring defect induced by Mg2+ in LiF and NaF. The stretching-mode spectra are analysed in the framework of the anharmonic-oscillator model: the related Morse parameters have been determined. A model is proposed for the defect, responsible for the stretching line and two bending lines, which are accounted for by an inversion doubling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02456923
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