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  • 1
    Electronic Resource
    Electronic Resource
    Dynamic nuclear polarization studies of labile complex formation between lithium ion and nitronyl nitroxide or imidazoline-1-oxyl radical ligands (1976)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 98 (1976), S. 4405-4409 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00431a012
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  • 2
    Electronic Resource
    Electronic Resource
    Oxidative Products of Hexoses in Thermally Treated Tobacco (1963)
    [s.l.] : Nature Publishing Group
    Nature 198 (1963), S. 1089-1090 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Our investigation established that similar changes take place during the exposure of flue-cured, bright tobacco, to heat. It is probable that, in flue-cured tobacco, the conversions which result in the formation of formic acid are purely chemical. The increase in the formic acid content is ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/1981089b0
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  • 3
    Electronic Resource
    Electronic Resource
    Rechargeable E' centers in sputter-deposited silicon dioxide films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2118-2120 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electron trapping instability in silicon dioxide films sputtered onto silicon substrates was analyzed by metal-oxide-semiconductor electrical methods and electron paramagnetic resonance (EPR), and was compared with an E' defect model from molecular orbital cluster calculations. This comparison indicates that an E' defect may well be responsible for the observed trapping instability, since electrically measured trap filling and emptying was quantitatively correlated with a reversible variation in the EPR signal magnitude. The specific model proposed for this defect is a "surface-like'' or hemi-E' center, O3≡Si−, which upon loss of an electron becomes O3≡Si+ and relaxes towards a planar configuration. The relaxation energy associated with the restoration of the original configuration is manifested as a hysteresis in the electrical trap filling and emptying cycle.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101512
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  • 4
    Electronic Resource
    Electronic Resource
    Electron paramagnetic resonance of porous silicon: Observation and identification of conduction-band electrons (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7468-7470 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New features in electron paramagnetic resonance (EPR) of porous silicon have been examined here. A new isotropic EPR center was observed at g=1.9995(1) at T=4.2 K, in both p-type and n-type porous silicon. By comparing its g value with those of shallow donors in bulk silicon, the center was identified due to the conduction-band (CB) electrons in silicon microcrystals. The CB signal, present in freshly prepared p-type and n-type samples, can be dramatically and surprisingly enhanced by the presence of a polar solvent on the n-type porous silicon surface. Even though it was shown that most of the donor electrons in an n-type sample can be pulled into the porous layer from the substrate by solvent exposure of the porous layer, the possible electrochemical effects are not yet completely understood; to establish a reasonable model for them would require appropriately controlled experiments. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365289
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  • 5
    Electronic Resource
    Electronic Resource
    Electron paramagnetic resonance investigation of charge trapping centers in amorphous silicon nitride films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4034-4046 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have explored the nature of the silicon dangling-bond center in amorphous hydrogenated silicon nitride (a-SiNx:H) thin films, and its relationship to the charge trapping centers using electron paramagnetic resonance (EPR) and capacitance-voltage (C-V) measurements. We have investigated the quantitative relationship between the concentration of silicon dangling bonds using EPR and the concentration of charge traps, measured by C-V measurements, for both UV-illuminated and unilluminated a-SiNx:H thin films subjected to both electron and hole injection sequences. A theoretical framework for our results is also discussed. These results continue to support a model in which the Si dangling bond is a negative-U defect in silicon nitride, and that a change in charge state of preexisting positively and negatively charged Si sites is responsible for the trapping phenomena observed in these thin film dielectrics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355315
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  • 6
    Electronic Resource
    Electronic Resource
    Rechargeable E' centers in silicon-implanted SiO2 films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7359-7367 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Implantation of Si in does of 1015–1016 cm−2 into dry thermal oxides on silicon wafers produces a three-state MOS memory device. For both positive- and negative-going traps, gate voltage stress up to ±10 MV/cm−1 generates stable (±) oxide charge near the gate and ((minus-plus)) charge near the substrate. Electron paramagnetic resonance (EPR) measurement on corona-field (≤11 MV/cm) stressed oxides reveals E' centers in regions of positive charge, which may be recycled between the EPR-visible (+) state and the invisible neutral state. The correspondence of charge and EPR indicates a composite or Feigl-Fowloer-Yip E' center, O3 3/4 Si:...+Si 3/4 O3, arising from nonstoichiometric Si fused into the SiO2 lattice. Upon trapping an electron, the center rebonds to yield O3 3/4 SiSi 3/4 O3. The charging parameters of the E' center suggest tunneling of an electron from the (0→+) state, and are consistent with the theoretical prediction of the energy level and Franck–Condon relaxation. The three types of E' centers observed in this and related studies are compared with the E'α, Eβ and E'γ variants of bulk amorphous silica.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346059
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  • 7
    Electronic Resource
    Electronic Resource
    Mechanism of negative-bias-temperature instability (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1712-1720 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Although negative-bias-temperature instability in metal-oxide-semiconductor integrated circuits has been minimized empirically, the exact mechanism is unknown. We argue in this paper that the mechanism of negative-bias-temperature instability can be modeled by a first-order electrochemical reaction between hydrogenated trivalent silicon, a neutral water-related species located in the oxide near the Si-SiO2 interface, and holes at the silicon surface to form neutral trivalent silicon and a positively charged water-related species. To show that such a reaction describes the phenomenon, we show that (1) water must be present in the oxide near the Si-SiO2 interface, (2) induced interface and oxide-fixed charge densities are equal, (3) the saturation interface-trap and oxide-fixed charge densities depend on the initial hole concentration at the silicon surface or aging field, (4) the buildup of these charge densities follows first-order reaction kinetics, and (5) time constants for this charge buildup are independent of aging field. The measurements which are done to demonstrate these features combine room-temperature charge measurement using the Q-C method with current measurements during accelerated aging.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347217
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  • 8
    Electronic Resource
    Electronic Resource
    Silicon damage caused by CCl4 reactive ion etching: Its characterization and removal by rapid thermal annealing (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 862-866 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that CCl4 reactive ion etching produces lattice damage, chlorine contamination, and modified electrical properties at etched silicon surfaces. The structural and electrical property changes caused by the chemical-physical etching of CCl4 reactive ion etching are found to be similar to the structural and electrical property changes caused by the physical etching of inert gas ion beam etching. Rapid thermal anneals of 1100 °C for 10 sec are shown to give both structural recovery and electrical property recovery to CCl4-etched silicon surfaces. The chlorine contamination is also shown to be driven off by this rapid thermal anneal. Although it has been reported that rapid thermal annealing does not restore reactive ion-etched silicon surfaces in the case of certain other etching gases, it is effective here in a case where no substantial residue layer is present after etching and impurities present after etching evolve out during the rapid heat pulse.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336156
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  • 9
    Electronic Resource
    Electronic Resource
    Low-temperature electron spin resonance investigations of silicon paramagnetic defects in silicon nitride (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2417-2419 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have reproduced and extended some recently reported electron spin resonance (ESR) measurements related to the nature of the dominant charge traps in silicon nitride. We detected defect centers at low temperatures using ESR, in both as-deposited and ultraviolet-irradiated silicon nitride powders and films prepared by low-pressure chemical vapor deposition (LPCVD). Only two silicon dangling bond defects were observed in the silicon nitride, one at g=2.003 (⋅Si≡N3), and the other at g=2.005 (⋅Si≡Si3). The signal intensity at g=2.003 is by far the dominant signal in the LPCVD films and powders subjected to UV illumination; the signal at g=2.005 is only about 3% of its intensity. These results support the idea that there is just one dominant silicon paramagnetic center (⋅Si≡N3), which is responsible for charge trapping in silicon nitride.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104889
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  • 10
    Electronic Resource
    Electronic Resource
    Electron paramagnetic resonance of nitrogen pairs and triads in 6H-SiC: Analysis and identification (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1858-1860 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of electron paramagnetic resonance (EPR) of nitrogen-doped 6H-SiC is reported here. By use of both first- and second-harmonic EPR detection, the predicted spectral fingerprints for nitrogen pairs and triads were found at low temperatures. The pair spectrum was present in the second harmonic, while the spectral feature for both nitrogen pairs and triads was evidenced in the first harmonic. At least one nitrogen donor of the identified pairs and triads is located at one of the two available quasicubic carbon sites, and the other(s) could be at any one of the two quasicubic sites and the hexagonal carbon site. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118713
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