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  • 1
    Electronic Resource
    Electronic Resource
    High-concentration Ce doping at n- and p-type Al/GaAs Schottky barrier interfaces (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2403-2405 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al/GaAs Schottky barriers are fabricated with 2.5–20-A(ring) thick doping layers of Ce of concentrations 1020 cm−3 and 1021 cm−3 situated below the GaAs surface. Schottky barrier heights (SBHs) are determined from current- and capacitance-voltage measurements. n-type SBHs decrease with increasing Ce doping layer thickness, while p-type SBHs increase, but to a lesser degree. A cross-sectional image taken by high-resolution transmission electron microscopy shows that Ce is located in the substitutional sites of the doping layers. The changes in the SBHs are attributed to strain induced by Ce atoms in the substitutional sites. The difference in the magnitudes of change observed for n- and p-type SBHs is discussed in relation to the inhomogeneity observed in the density of Ce atoms at the interface regions.〈pc;normal〉
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106029
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  • 2
    Electronic Resource
    Electronic Resource
    Conductance oscillations and transport spectroscopy of a quantum dot (1991)
    Springer
    The European physical journal 85 (1991), S. 357-366 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Results are reported for low temperature measurements of the conductance through small regions of a two-dimensional electron gas (2 DEG). An unconventional GaAs heterostructure is used to form a 2 DEG whose density can be tuned by the gate voltage applied to its conductive substrate. Electron beam lithography is used to pattern a narrow channel in the 2 DEG interrupted by two constrictions, defining a small 2 DEG island between them. The conductance is found to oscillate periodically with the gate voltage, namely with electron density. Calculations of the capacitance between the substrate and the island show that the period of oscillation corresponds to adding one electron to the island. The oscillatory behavior results primarily from the discreteness of charge and the Coulomb interaction between electrons. However, the observed temperature dependence of these oscillations requires a more sophisticated treatment which includes the quantized electron energy levels as well. The magnetic field dependence of the oscillations allows us to extract the discrete energy spectrum of the quantum dot in the quantum-Hall regime.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01307631
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    Paper (German National Licenses)
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