Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
82 (1997), S. 5416-5421
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A sealed tube method has been adopted to prepare Zn-diffused InP layers. Both Zn3P2 and Zn+InP have been used as sources. The samples were prepared at 500 °C. The diffusion time ranged from 5 up to 120 min. Both S- and Zn-doped InP crystals have been used as substrates. The Zn depth profile has been measured by secondary ion mass spectroscopy, while the lattice strain produced by diffusion has been carefully investigated by x-ray double crystal diffraction and the standing-waves method of recording photoelectrons. The results show that in the S-doped crystal the diffused/virgin interface is very sharp and the diffused layers are lattice contracted. The concentration of Zn, as well as the lattice strain, do not depend on the diffusion time, whereas the thickness of the diffused layer increases with time. The plot of diffused layer thickness versus the square root of the diffusion time showed different slopes depending on the diffusion sources. Both lattice strain and diffusion depth depend on the diffusion source, whereas the concentration of Zn is not influenced by the type of diffusion source. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.365569
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