ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Recently, a method has been proposed in order to measure the threading dislocation density in epitaxial layers, based on x-ray diffraction and the analysis of the Bragg peak width β. According to this model, β is broadened by a strain effect (a modification of the lattice parameter near the dislocation line) and by a tilt effect (a bending of lattice planes caused by the dislocation), independent of each other. In the present work, this method is applied on GaAs/InAs and InAs/GaAs heterostructures. Different geometrical conditions and reflections, including (004), (115), (335), (444), and (117), have been investigated, showing a strong difference in β when, the reflection fixed, the grazing incidence or grazing emergence geometry is chosen. We demonstrate that this effect can be explained in terms of a lateral nonuniformity of the eplilayer induced by the misfit dislocations. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116955
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