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  • 1
    Electronic Resource
    Electronic Resource
    Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1531-1533 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown film structures by molecular beam epitaxy which include GaAs buffer layers grown at low substrate temperatures (250 °C). The film structures have been examined using transmission electron microscopy. The layers grown at normal temperatures (600 °C) were free of defects or clusters. In contrast, the layer which was grown at low substrate temperatures contained precipitates which have been identified as hexagonal arsenic. The density of the arsenic precipitates is found to be very sensitive to the substrate temperature during growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103343
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Metal/(100) GaAs interface: Case for a metal-insulator-semiconductor-like structure (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 69-71 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Various models have been developed to address the problem of "Fermi level pinning,'' i.e., why the barrier height varies much less than the Schottky metal work function limit. The most widely accepted mechanism is some variant of the metal-induced gap state model. However, recent experimental data on (100)InxGa1−x As surfaces and interfaces (0≤x≤1) suggest that the surface or interface Fermi level can assume values which lie well outside the variance associated with Fermi level pinning; in fact, recent data suggest the achievement of the Schottky limit. Furthermore, studies of epitaxially grown layers where dopant incorporation is dependent on an interface Fermi level suggest that such Fermi level positions are not always pinned. In order to account for these recent results, along with the pinned values, we introduce the concept of an insulating layer like surface reconstruction. Recent calculations suggest that reconstructions of the GaAs(100) surface are insulating. Thus, we suggest that the GaAs(100) metal interface is often a metal (M)/surface reconstruction layer (I)/GaAs bulk (S), or MIS-like. This approach attempts to reconcile disparate models of interface behavior by showing the limits of validity of these models with respect to the actual physical structure of the interface in question.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102654
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  • 3
    Electronic Resource
    Electronic Resource
    Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1331-1333 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Arsenic precipitates have been observed in GaAs low-temperature buffer layers (LTBLs) used as "substrates'' for normal molecular beam epitaxy growth. Transmission electron microscopy has shown the arsenic precipitates to be hexagonal phase single crystals. The precipitates are about 6±4 nm in diameter with a density on the order of 1017 precipitates per cm3. The semi-insulating properties of the LTBL can be explained in terms of these arsenic precipitates acting as "buried'' Schottky barriers with overlapping spherical depletion regions. The implications of these results on LTBL resistivity stability with respect to doping and anneal temperature will be discussed as will the possible role of arsenic precipitates in semi-insulating liquid-encapsulated Czochralski-grown bulk GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103474
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  • 4
    Electronic Resource
    Electronic Resource
    Accumulation capacitance for GaAs-SiO2 interfaces with Si interlayers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1919-1921 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the properties of metal-oxide-semiconductor (MOS) structures fabricated by remote plasma-enhanced chemical vapor deposition of SiO2 upon GaAs substrates. For n-type GaAs, a silicon interlayer has been found to improve the interface properties. For our samples and this interlayer, integration of the quasi-static capacitance curve indicates a band-bending range of about 0.8 eV. For these samples, we observe a hysteresis of ∼0.6 V, and shifts of only 0.2 V in the midpoint of the rise from minimum to maximum capacitance upon changing frequency from 10 to 200 kHz at room temperature. Similar measurements for temperatures down to 80 K establish that even at such low temperatures an accumulation capacitance is observed. This sets an upper limit of about 70 meV for the separation between the interface Fermi level and the conduction-band minimum. This limit is a factor of two smaller than the best previously reported limit for approach to the conduction band of GaAs in a MOS structure. Spectroscopic ellipsometry establishes that nearly 2 A(ring) equivalent thickness of unoxidized silicon is at the SiO2/GaAs interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104012
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  • 5
    Electronic Resource
    Electronic Resource
    Application of spectroscopic ellipsometry to complex samples (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2426-2428 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several heterostructure samples of varying complexity were studied by spectroscopic ellipsometry. The analysis of this data, requiring computer modeling for optimum correlation between model and experiment, demonstrates the ability of this technique to apply multiparameter analysis to complex samples. Our results provide an absolute measure of up to seven material parameters, with 90% confidence limits in the range 0.1–2% for at least the four most sensitive parameters. Such accuracies are improved by a factor of 5–10 over previous reports for such complex samples. Furthermore, the method is demonstrated to provide sensitive detection of interfaces, even when buried under ≥0.5 μm of GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100411
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Reactions of Pd on (100) and (110) GaAs surfaces (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1519-1526 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reactions of Pd on atomically clean or air-exposed (100) and (110) GaAs surfaces at temperatures between 20 to 500 °C in different ambients were investigated by transmission electron microscopy. Interfacial reactions quite different from previous x-ray results were observed and two new Pd-Ga-As ternary phases were identified for the first time. At lower temperatures (T(approximately-less-than)250 °C) the formation of a ternary phase PdGa∼0.3As∼0.2, which has a hexagonal structure very similar to that of Pd2Ge or Pd2Si with a0=b0=0.672 nm and c0=0.340 nm, was observed. This ternary phase is epitaxially oriented with (12¯0)ternary(parallel)(100)GaAs and [001]ternary(parallel)[011]GaAs on (100) GaAs substrates, and with (11¯0)ternary(parallel)(110)GaAs and [001]ternary(parallel)[11¯0]GaAs on (110) GaAs substrates. At temperatures between 350 and 500 °C only one phase, PdGa, was observed to form in a high vacuum environment, whereas in a forming gas ambient, either a mixture of PdAs2 and another ternary phase PdGa∼0.6As∼0.4 (at 350 °C) or a mixture of PdAs2 and PdGa (at 500 °C) was observed. The ternary phase PdGa∼0.6As∼0.4 is also hexagonal in structure with a0=b0=0.947 nm and c0=0.374 nm. The PdGa phase formed at high temperature is epitaxially oriented on (100) substrates with (110) PdGa(parallel)(100)GaAs and [1¯11]PdGa(parallel)[011]GaAs, but is randomly oriented on (110) substrates. All these observations indicate that the Pd-GaAs reactions at T(approximately-greater-than)350 °C are very sensitive to the ambient conditions but not as sensitive to the GaAs surface cleanliness or substrate orientation. Correlation of these structural observations to ultraviolet and x-ray photoelectron spectroscopy data obtained from the same reacted interfaces are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336085
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  • 7
    Electronic Resource
    Electronic Resource
    Lifetime measurements on silicon-on-insulator wafers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 189-190 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report noncontact measurements of the effective minority carrier lifetime in the superficial silicon layer of silicon-on-insulator wafers. The carriers are excited by a pulse of short-wavelength photons (λ≤350 nm), all of which are absorbed in the first 500 A(ring) of the silicon layer. The carriers are detected by the change in microwave reflectance in a resonant circuit to which the wafer is coupled. The results obtained vary from ∼3 μs for a three year old separation by implanted oxygen (SIMOX) wafer to ∼25 μs for current vendor SIMOX and bond-etchback samples. The variation in free surface recombination velocity is eliminated by HF passivating the samples prior to measurement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110395
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