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  • 1
    Electronic Resource
    Electronic Resource
    A systematic approach to the measurement of ideality factor, series resistance, and barrier height for Schottky diodes (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4739-4742 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nongraphical approach is proposed for measuring and evaluating the ideality n factor and the series resistance of a Schottky diode. The approach involves the use of an auxiliary function and a computer-fitting routine. This technique has been found to be both accurate and reliable. The validity of this has also been confirmed by way of I-V measurements using both commercially available and laboratory-prepared Schottky diodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352082
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical conduction in annealed semi-insulating InP (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3838-3842 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variable-temperature current–voltage has been used to study the conduction properties of Fe-doped semi-insulating (SI) InP in the as-grown and annealed states. It is found that the trap-filling (TF) process disappears gradually with lengthening of annealing time. This phenomenon is explained by the decrease of the concentration of the empty Fe deep level (Fe3+) that is caused by the thermally induced donor defect formation. The TF process cannot be observed in annealed undoped and long-time annealed Fe-doped SI InP material. The breakdown field of annealed undoped and Fe-doped SI InP is much lower than that of as-grown Fe-doped InP material. The breakdown field decreases with decreasing of temperature indicating an impact ionization process. This breakdown behavior is also in agreement with the fact that the concentration of the empty deep level in annealed InP is lowered. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372422
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  • 3
    Electronic Resource
    Electronic Resource
    Thermally induced conduction type conversion in n-type InP (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2361-2363 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: n-type semiconducting InP is changed into p-type semiconducting by short time annealing at 700 °C. Further annealing for a longer time leads to a second conduction-type conversion changing the material back to n type again but with a much higher resistivity. These conduction conversions indicate the formation of both acceptor and donor defects and the progressive variation of their relative concentrations during annealing. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371057
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of annealing on the electrical properties of Fe-doped InP (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 981-984 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe-doped liquid encapsulated Czochralski InP has been annealed between 500 and 900 °C for different durations. The electrical property of annealed InP has been studied by temperature-dependent Hall measurement. Defects in annealed Fe-doped InP have been detected by room-temperature transient photocurrent spectroscopy. Upon annealing, the change of electrical property in this material is indicative of the formation of a high concentration of defects. The formation process of these thermally induced defects is discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370835
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  • 5
    Electronic Resource
    Electronic Resource
    A deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4558-4562 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Beryllium implantation induced defects in 6H-SiC pn junctions have been investigated by deep level transient spectroscopy. Five defect centers labeled BE1, BE2, BE3, BE4, and BE5 have been detected in the temperature range 100–450 K. A comparative study has also been performed in low beryllium doped n-type 6H-SiC, which proved that the BE1, BE2, and BE3 centers are electron traps located at 0.34, 0.44, and 0.53 eV, respectively, below the conduction band edge. On the other hand, the BE4 and BE5 centers have been found to be hole traps which are situated at 0.64 and 0.73 eV, respectively, above the valence band edge. Possible defect configurations associated with these deep levels are discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287232
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  • 6
    Electronic Resource
    Electronic Resource
    Compensation defects in annealed undoped liquid encapsulated Czochralski InP (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 951-955 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: As-grown undoped n-type semiconducting and annealed undoped semi-insulating (SI) liquid encapsulated Czochralski (LEC) InP has been studied by temperature dependent Hall measurement, photoluminescence spectroscopy, infrared absorption, and photocurrent spectroscopy. P-type conduction SI InP can frequently be obtained by annealing undoped LEC InP. This is caused by a high concentration of thermally induced native acceptor defects. In some cases, it can be shown that the thermally induced n-type SI property of undoped LEC InP is caused by a midgap donor compensating for the net shallow acceptors. The midgap donor is proposed to be a phosphorus antisite related defect. Traps in annealed SI InP have been detected by photocurrent spectroscopy and have been compared with reported results. The mechanisms of defect formation are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370830
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  • 7
    Electronic Resource
    Electronic Resource
    Application of positron annihilation lifetime technique to the study of deep level transients in semiconductors (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3931-3933 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Unlike its conventional applications in lattice defect characterization, positron annihilation lifetime technique was applied to study temperature-dependent deep level transients in semiconductors. Defect levels in the band gap can be determined as they are determined by conventional deep level transient spectroscopy (DLTS) studies. The promising advantage of this application of positron annihilation over the conventional DLTS is that it could further extract extra microstructure information of deep-level defects, such as whether a deep level defect is vacancy related or not. A demonstration of EL2 defect level transient study in GaAs was shown and the EL2 level of 0.82±0.02 eV was obtained by a standard Arrhenius analysis, similar to that in conventional DLTS studies. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436551
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  • 8
    Electronic Resource
    Electronic Resource
    Native donors and compensation in Fe-doped liquid encapsulated Czochralski InP (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 86-90 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped and Fe-doped liquid encapsulated Czochralski (LEC) InP has been studied by Hall effect, current–voltage (I–V), and infrared absorption (IR) spectroscopy. The results indicate that a native hydrogen vacancy complex donor defect exists in as-grown LEC InP. By studying the IR results, it is found that the concentration of this donor defect in Fe-doped InP is much higher than that in undoped InP. This result is consistent with the observation that a much higher concentration of Fe2+ than the apparent net donor concentration is needed to achieve the semi-insulating (SI) property in InP. By studying the I–V and IR results of Fe-doped InP wafers sliced from different positions on an ingot, the high concentration of Fe2+ is found to correlate with the existence of this hydrogen complex. The concentration of this donor defect is high in wafers from the top of an ingot. Correspondingly, a higher concentration of Fe2+ can be detected in these wafers. These results reveal the influence of the complex defect on the compensation and uniformity of Fe-doped SI InP materials. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1331644
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  • 9
    Electronic Resource
    Electronic Resource
    Effects of Guanyl Nucleotides on [3H]Flunitrazepam Binding to Rat Hippocampal Synaptic Membranes: Equilibrium Binding and Dissociation Kinetics (1985)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 44 (1985), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The effects of guanyl nucleotides on the binding of [3H]flunitrazepam to rat hippocampal synaptic membranes were studied. In equilibrium binding studies, γ-amino-n-butyric acid (GABA) increased and GTP decreased the binding affinity of [3H]flunitrazepam; GTP also caused a decrease in binding capacity. The effect, however, is variable. In studies of the dissociation kinetics of [3H]flunitrazepam using diazepam and the antagonist Ro 15–1788 as the displacers, there was evidence of two dissociation rate constants. GTP increased both the fast and slow-dissociation rate constants and increased the ratio of the slow-dissociation binding state. The effect of GTP was mimickled by its nonhydrolyzable analogue 5′-guanylylimidodiphosphate but not by ATP and occurred when diazepam, but not when Ro 15–1788, was used as the displacer. GABA antagonized the effect of GTP on the dissociation of [3H]flunitrazepam. The nature of the benzodiazepine recepter, its actions, and the possible role of cyclic AMP as a second messenger are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1985.tb07135.x
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  • 10
    Electronic Resource
    Electronic Resource
    Characterization of Pt-Si interface by spectroscopic ellipsometry (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7423-7427 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic ellipsometric measurements for Pt/n-Si samples with different thickness of Pt films have been performed. The thickness of the Pt films determined with the three-phase model (air/Pt/Si) changes with the wavelength λ while that with the four-phase model (air/Pt/interface layer/Si) remains unchanged, showing the existence of an interface layer. At the same time, the apparent optical dielectric constants of the interface layer as a function of λ are also obtained. A calculation based on the effective medium theory is carried out to simulate the optical dielectric data of the interface layer. Some structural information of the interface layer is obtained from the calculation. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357968
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