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  • 1
    Electronic Resource
    Electronic Resource
    Structural and optical studies of InxGa1−xAs/GaAs multiple quantum wells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 482-489 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained multiple quantum wells of InxGa1−xAs/GaAs were grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) and characterized by secondary ion mass spectrometry, x-ray diffraction, and optical spectroscopy. The structural analysis demonstrates the excellent control of the interface morphology and composition achieved by MOCVD growth. Temperature dependent optical absorption, photoluminescence, and magnetotransmission were used to evaluate the well-width dependence of the major excitonic properties. The samples show sharp excitonic resonances with distinct excited states evolving into Landau-type excited states in high magnetic field. The well-width dependence of the excitonic eigenstates and of the exciton binding energy as well reproduced by envelope function and variational calculations, also in the presence of external electric field. Finally, nonlinear electro-optic modulation induced by the quantum confined Stark effect is demonstrated in a Schottky diode with extremely low switching threshold. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362751
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  • 2
    Electronic Resource
    Electronic Resource
    Infrared distributed Bragg reflectors based on amorphous SiC/SiO2 heterostructures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2799-2800 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous SiC/SiO2 distributed Bragg reflectors (DBR) deposited by ion beam sputtering at room temperature is reported on in this letter. The DBR consists of only 2.5 pairs and exhibits high peak reflectivity (84%) around ∼1.7 μm with a full width at half maximum of about 1000 nm. The measured reflectivity spectrum is well reproduced by the equivalent layer theory by using the measured refractive indices of SiC and SiO2 and including absorption losses. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119063
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetism as a probe for wave function localization in GaSb/AlGaSb quantum wells (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1465-1471 
    Details
    ISSN: 0392-6737
    Keywords: Surface and interface electron states ; Excitons and related phenomena (including electron-hole drops) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary The localization of the wave function on the scale length of a single monolayer has been studied by magnetophotoluminescence in GaSb/AlGaSb quantum wells. The studied range of well width includes the direct-indirect transition involvingL-point conduction states and Γ-point valence states induced by quantum size effects. Separate carrier localization dominates at higher field values (B〉2T), whereas the excitonic effects are important only in the low field range. Variational calculations of the excitonic transverse extension provide a quantitative description of the experimental data. The dependence of the effective reduced mass on the well width has been obtained experimentally by magnetoluminescence that is highly sensitive to the modifications of the wave function, even on the scale of a single monolayer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457228
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetic-field effects in the luminescence of V-shaped quantum wires (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1681-1685 
    Details
    ISSN: 0392-6737
    Keywords: Surface and interface electron states ; Excitons and related phenomena (including electron-hole drops) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary Quantum wire heterostructures, such as V- and T-shaped wires, are very promising candidates for low-threshold lasing. A crucial issue is the excitonicvs. free-carrier nature of the radiative recombination. Here, we report on magnetophotoluminescence studies of GaAs and InGaAs V-shaped wires that allow to discriminate different regimes of radiative recombination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457263
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  • 5
    Electronic Resource
    Electronic Resource
    Optical transitions involving excitons in quantum wires (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1219-1228 
    Details
    ISSN: 0392-6737
    Keywords: Excitons and related phenomena (including electron-hole drops) ; Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; Optical properties of thin films surfaces and layer structures (superlattices, heterojunctions and multilayers) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We present a comprehensive discussion of the excitonic properties of V-shaped GaAs and InGaAs quantum wires grown on patterned substrates. Systematic linear and non-linear spectroscopic studies have been performed in order to clarify the impact of lateral confinement on the exciton wave function, namely: enhanced exciton binding energy, localization in magnetic field, recombination from excited states and multiphoton absorption. The careful evaluation of the electron confinement energies, based on the actual quantum wire profile obtained by TEM micrographs, including the internal piezoelectric field induced by off-diagnoal terms of strain tensor, reproduces quite well the measured one-dimensional states. Finally, application of quantum wires in a p-i-n wave guide for bistable operation is demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457193
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