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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 984-992 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth of GaAs and (Al,Ga)As doped with boron (from diborane) and silicon was investigated to examine the effect of boron on (DX) centers in silicon-doped material. The addition of diborane to the growth of GaAs and (Al,Ga)As results in the superlinear incorporation of boron into the solid with a concurrent reduction in the growth rate. Boron incorporation also decreases as the growth temperature is increased. Additionally, the AlAs mole fraction increases with increasing diborane during (Al,Ga)As growth. The DX center was not eliminated in (Al,Ga)As by the addition of boron. The thermal stability of these materials was also investigated.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4814-4819 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of dislocation-dislocation interactions on the relaxation behavior of biaxially stressed semiconductor thin films is considered by including interaction terms in an energy minimization. Both parallel and crossing interactions are considered and energies are calculated for orthogonal arrays of equally spaced 60° misfit dislocations, and it is shown that the parallel interactions can be either attractive or repulsive. The equilibrium misfit dislocation density is shown to be a function of the "cutoff'' distance for dislocation interactions in these structures.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 8279-8283 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality strain-relaxed SiGe templates with a low threading dislocation density and smooth surface are critical for device performance. In this work, SiGe films on low temperature Si buffer layers were grown by solid-source molecular beam epitaxy and characterized by atomic force microscope, double-axis x-ray diffraction, photoluminescence spectroscopy, and Raman spectroscopy. Effects of the growth temperature and the thickness of the low temperature Si buffer were studied. It was demonstrated that when using proper growth conditions for the low temperature Si buffer the Si buffer became tensily strained and gave rise to the compliant effect. The lattice mismatch between the SiGe and the Si buffer layer was reduced. A 500 nm Si0.7Ge0.3 film with a low threading dislocation density as well as smooth surface was obtained by this method. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6803-6810 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The wide rocking curves of matrix reflections of the in situ eutectic composite TaSi2–Si make wafers of this material attractive for use as wide-bandpass monochromators for synchrotron radiation, and characterization of wafers of TaSi2–Si for use with energies normally accessible at storage rings (i.e., 5–40 keV) is the focus of the present report. A wafer with [111]Si orientation and a wafer with [110]Si orientation are studied. The high degree of preferred orientation of the TaSi2 rods relative to the Si matrix is examined using synchrotron Laue patterns, and the 100TaSi2, 003TaSi2, 101TaSi2, and 102TaSi2 reflections are used to establish the orientation relationship and to determine that the spread of rod orientations is at least 5° and probably no greater than 6°. Double-axis diffractometry with Cu Kα radiation reveals matrix reflections with rocking curve widths that are about 20 times broader than those from perfect Si and with peak reflectivities approaching 20%. The rocking curves widths are found to be relatively insensitive to irradiated area, thus indicating that most of the observed width is not due to long-range bending. Triple-axis diffractometry with Cu Kα radiation reveals that considerable compressive strain exists in the matrix and that much of the width of the diffraction peak is due to mosaicity. The performance of the [111]Si TaSi2–Si wafer and a perfect [111] Si wafer as monochromators for microradiography are compared, and a gain of an order of magnitude in x-ray intensity delivered to the sample is demonstrated with the composite crystal. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2418-2420 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lifetimes at Ga1−xInxP/GaAs heterojunction interfaces determined by photoluminescence power dependence measurements and diffusion model calculations have been correlated to dislocation densities derived from high-resolution x-ray diffraction measurements. The diffusion model calculations are used to determine lifetimes in the region of misfit dislocations by fitting experimental power dependencies of buried-layer photoluminescence. High-resolution x-ray diffraction reveals dislocation densities through the broadening of diffraction peaks due to slight lattice tilts introduced by the dislocations. Lifetimes and dislocation density per dislocation length are correlated to show the functional relationship between the dislocation density and the density of the lifetime-limiting recombination center at the interface.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3362-3366 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thickness and composition of the InGaAs layer in GaAs/AlGaAs/InGaAs/AlGaAs/GaAs high-electron-mobility transistor devices were determined to within ±5 A(ring) and ±0.003, respectively, using high-resolution x-ray diffraction. The combined thickness of the capping AlGaAs and GaAs layers were also determined to within ±5 A(ring). Although the interference effects near the substrate peak in the diffraction pattern may be identical for structures with different InGaAs thicknesses, the peak from the buried InGaAs layer will be different. In other words, if the diffraction from the buried layer is measured, one can readily distinguish between structures whose interference peaks are otherwise the same. It is also shown that the use of different reflections removes the ambiguity associated with interference peaks.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2066-2069 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain and crystalline perfection of GaAs implanted with either carbon, gallium, or both carbon and gallium ions (5×1014 cm−2) were investigated using high-resolution triple axis diffractometry. We determined that a significant amount of carbon occupied substitutional sites after rapid thermal annealing only when gallium was co-implanted. The carbon in the carbon-implanted layer remained in nonsubstitutional sites after annealing. In both cases, most of the lattice strain in the implanted layer decreases upon annealing, but a defective crystalline structure with an extensive mosaic spread evolves. Conventional double-axis x-ray measurements were employed for comparison.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1979-1981 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intentional oxygen doping ((approximately-greater-than)1017 cm−3) of GaAs and Al0.30Ga0.70As epitaxial layers was achieved during metalorganic vapor phase epitaxy through use of an oxygen-bearing metalorganic precursor, dimethylaluminum methoxide (CH3)2AlOCH3. The incorporation of oxygen and very low levels of Al (AlAs mole fraction 〈0.005) in the GaAs layers leads to the compensation of intentionally introduced Si donors. Additionally, deep levels in GaAs associated with oxygen were detected. The introduction of dimethyl aluminum methoxide during AlxGa1−xAs growth did not alter Al mode fraction or degrade the crystallinity of the ternary layers, but did incorporate high levels of oxygen which compensated Si donors. The compensation in both GaAs and Al0.30Ga0.70As indicates that high resistivity buffer layers can be grown by oxygen doping during metalorganic vapor phase epitaxy.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1089-1091 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three distinct etch pit features in ZnSe based epitaxial layers have been identified. The features were observed with optical dark field microscopy and confirmed to be pits using scanning electron microscopy. Using transmission electron microscopy, we associated different etch pits with characteristic crystallographic defects which are common in epitaxially grown II–VI materials. Frank-type stacking faults form the largest etch pit followed by a paired configuration of Shockley- type stacking faults. The smallest etch pit is due to a single Shockley-type stacking fault. This study represents one of the first examples of identifying crystallographic defects in II–VI wide bandgap materials using etch pit delineation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1040-1042 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of GaAs have been grown by metalorganic molecular beam epitaxy (MOMBE) with atomic carbon concentrations ranging from 4×1017 to 3.5×1020 cm−3. The dependences of GaAs lattice parameter and hole concentration on atomic carbon concentration have been determined from x-ray diffraction, Hall effect, and secondary-ion mass spectrometry measurements. For atomic carbon concentrations in excess of 1×1019 cm−3, the hole concentrations are less than the corresponding atomic carbon concentrations. Lattice parameter shifts as large as 0.2% are observed for carbon concentrations in excess of 1×1020 cm−3, which results in misfit dislocation generation in some cases due to the lattice mismatch between the C-doped epilayer and undoped substrate. Over the entire range of carbon concentrations investigated, Vegard's law accurately predicts the observed lattice contraction.
    Type of Medium: Electronic Resource
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