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  • 1
    Electronic Resource
    Electronic Resource
    First and second harmonics of the laser response to current modulation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 689-699 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nonsteady-state generalization of the laser current-voltage and power characteristic model is obtained and used to derive the small-signal systems of equations for first- and second-order laser distortion to current modulation. The model takes into account the heating of the electron-hole gas in the active region and intrinsic leakage current associated with escape of the particles through the heterojunctions. The intrinsic diode capacitances and general form impedance are included in the small-signal equations. The quantitative analysis of the laser response to the current modulation is carried out on the specific example of the 1.3 μm laser based on an InGaAsP compound. A dependence of the light first and second harmonics on the thickness of the cladding layer (due to change of the leakage current) is demonstrated. It is shown that for thicknesses larger than several microns the influence of the leakage is negligible. It is found that modulation of the electron-hole gas temperature (due to heating effect) dramatically increases the second harmonic just in the range of frequencies (〈500 MHz) important for laser applications in the transmission of the analog video signals in cable television systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357812
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  • 2
    Electronic Resource
    Electronic Resource
    Thermionic-tunneling-diffusion model of the laser current-voltage and power characteristics (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7669-7680 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical model of the laser-diode current-voltage (I-V) characteristics based on the generalized thermionic-tunneling-diffusion mechanism of carrier transport through heterointerfaces has been proposed. It is valid for any degree of the carrier distribution degeneracy, not only in the laser active region but in the cladding layers as well. The model combines the laser rate equations with current flow equations and permits the evaluating of power-current and power-voltage characteristics. It is assumed that the temperature of the electron-hole gas in the active layer is different from the lattice temperatures. Under appropriate circumstances this allows one to consider the gas heating effect. In the present paper it is supposed that the temperature of the carriers in the laser active layer is proportional to the current in order to investigate the influence of heating on the laser I-V and power characteristics. The sequence of steps which must be carried out in the application of the model is described in detail. Analysis of the formation of different current components is carried out for lasing and unlasing laser diodes using as an example the 1.3 μm laser based on an InGaAsP compound. The influence of the heating effect and leakage current on the low-frequency linear response function is also presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356598
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  • 3
    Electronic Resource
    Electronic Resource
    A new analytical model for heterostructure field-effect transistors (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2116-2120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a new analytical model for heterostructure field-effect transistors. This model is based on detailed consideration of different forces acting on carriers in a two-dimensional gas and on the analysis of the difference between the electric potential and electron quasi-Fermi level. We also propose an approximate analytical model that takes into account the velocity saturation in the channel. This model incorporates an arbitrary dependence of the carrier concentration in the channel on the gate voltage. The obtained results are in good agreement with experimental data for n-channel heterostructure insulated gate field-effect transistors. Similar analytical models can also be developed for other devices such as p-channel transistors, superlattice field-effect transistors, and quantum well field-effect transistors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342859
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  • 4
    Electronic Resource
    Electronic Resource
    The role of diffusion in long-channel field-effect transistors under condition of the velocity saturation (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4699-4705 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical modulation-doped field-effect transistor model including field-dependent mobility and diffusion transport of the electrons in the gradual channel approximation is proposed. The main aim of the model is to clarify the role of diffusion in the condition of the velocity saturation and its influence on the mechanism of the current saturation. Current-voltage characteristics are obtained in the parametric form. An explicit form of the I-V characteristic is deduced for a subthreshold region of the device operation. The influence of the velocity saturation and diffusion on the current flow in different parts of the channel and regions of the I-V characteristic is analyzed. It is shown that diffusion plays an important role in the entire range of the I-V characteristic and cannot be ignored in any realistic model. It follows from the model that in the final stage of current saturation, the latter is governed by the process of diffusion, and change of the current does not depend on the value of the saturated velocity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340125
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  • 5
    Electronic Resource
    Electronic Resource
    Quantum well emission transistor with tunneling output current (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 425-429 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a novel tunneling quantum well emission transistor (TQWET), in which the gate-induced modulation of the Fermi level in the quantum well leads to a strong variation of the tunneling current to the collector through the specially designed collector barrier. The device is calculated to possess a high transconductance and a large current drive. Low-temperature utilization of the transistor implies a high electron mobility in the quantum well (QW) and, therefore, low lateral resistance along the QW, a major current and speed limitation of the device. With this limitation taken into account, the TQWET shows the delay times ∼1.4 and 1.5 ps for temperatures 10 and 77 K, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343840
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  • 6
    Electronic Resource
    Electronic Resource
    Space-charge-limited current and capacitance in double-junction diodes (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1181-1189 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical theory is given for the space-charge-limited current in n-i-n or p-i-p diodes. The exact I-V characteristic is obtained in a parametric form. In the limit of high currents or for a large width of the intrinsic (i) base region the characteristics reduce to a Mott–Gurney form. In the low-current limit a linear I-V characteristic is obtained. The space-charge barrier presents a conceptually different case from a conventional barrier current in that the position of the barrier moves depending on the biasing condition. It is this motion which is responsible for the linear regime—which extends over a substantial range (∼10kT/e) of the applied voltage. The distribution of the electrostatic potential and of the quasi-Fermi level in the base, as well as the position of the potential maximum (the virtual cathode), are shown for different current levels. The differential capacitance of the double-junction diode is calculated and shown to be strongly dependent on the applied bias.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338165
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of image charges on impurity scattering of two-dimensional electron gas in AlGaAs/GaAs (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 382-386 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The theory of impurity scattering of electrons in the two-dimensional electron gas in (Al,Ga) As-GaAs modulation doped structures is modified to include the effects of image charges in the neutral doped AlGaAs layer. The effect of the finite width of the electron wave function in the two-dimensional gas is also included. Our model calculation shows that impurity scattering is substantially diminished by the image charges in the doped AlGaAs layer. In samples with large thicknesses of an undoped AlGaAs spacer layer, the mobility of the two-dimensional gas at low temperatures may be limited by compensated ionized impurities in the undoped spacer layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335689
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  • 8
    Electronic Resource
    Electronic Resource
    Analytical model of the modulation doped field-effect transistors including electron diffusion and drift velocity saturation (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1537-1538 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical modulation doped-field-effect transistors model including field-dependent mobility and diffusion transport of the electrons in the gradual channel approximation is proposed. Current-voltage characteristics are obtained in the parametric form. An explicit form of the I-V characteristic is deduced for a subthreshold region of the device operation. The influence of the velocity saturation and diffusion on the current flow is analyzed. It is shown that diffusion plays an important role in the entire region of I-V characteristic. It follows from the model that in the final stage of current saturation the latter is governed by the process of diffusion, and change of the current does not depend on the value of the saturated velocity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339623
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  • 9
    Electronic Resource
    Electronic Resource
    Impurity scattering of a two-dimensional gas calculated in the charge-sheet approximation (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 195-197 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simplified form of the screened impurity potential is used in the calculation of the impurity-scattering limited mobility. The simplification is based on modeling the two-dimensional gas as a charge sheet removed from the interface by some distance. It is shown that for the practical values of electron concentrations (1011–1012 cm−2), a good agreement with the exactly calculated mobility can be reached if one takes this distance equal to 0.55zav, where zav is the average separation of the two-dimensional electrons from the interface. The relative error does not exceed 20% in the case of scattering by the interface impurity centers and 10% in the case of the scattering by the remote centers. In the latter case the error decreases with the increased thickness of an undoped spacer layer. The proposed sheet model of the two-dimensional gas can be used in numerical calculations of the impurity scattering effects where accuracy of the calculated mobility plays a secondary role.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339181
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  • 10
    Electronic Resource
    Electronic Resource
    Modulation-doped structures with graded heterointerfaces (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1242-1246 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy subbands of the two-dimensional electron gas in the potential well at the heterointerface of the AlGaAs/GaAs heterostructures are calculated for different grading of AlGaAs composition. The concentration nso of the two-dimensional gas in the AlGaAs/GaAs modulation-doped structures with graded heterointerface is shown to increase with the increase in the grading length WGR at small values of WGR. At large values of WGR nso starts to decrease because of the diminishing interface peak of the conduction-band edge. Depending on composition and doping of the AlGaAs layer, the maximum value of nso is achieved for WGR between 20 and 70 A(ring). An increase in the concentration of the 2-D gas may lead to a larger device transconductance and to a large current swing. The obtained results indicate that extremely sharp heterointerfaces are not required for modulation-doped devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334520
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