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  • 1
    Electronic Resource
    Electronic Resource
    Tensile and compressive strain relief in InxGa1−xAs epilayers grown on InP probed by Raman scattering (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 803-809 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strain relaxation has been investigated by means of Raman scattering in strained InxGa1−xAs layers (with x ranging from 0 to 1) grown on In0.53Ga0.47As/InP (001). The epilayers are either under tensile (x〈0.53) or compressive (x〉0.53) strain. Relaxation coefficients have been deduced from the frequency shifts of the GaAs-like optical phonons. A marked dissymmetry in strain relief is found over the whole composition range between equivalent tensile and compressive misfits. Disorder activated Raman scattering features have been analyzed and correlated to the structural defects resulting from the strain relief in the two and three-dimensional growth modes. Strain inhomogeneities resulting from surface corrugation are evidenced by micro-Raman measurements on layers with tensile misfits. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365775
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  • 2
    Electronic Resource
    Electronic Resource
    High strain effects evidenced by Raman scattering in arsenic clusters in As-implanted GaAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1927-1929 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering has been used to track structural information on arsenic clusters in GaAs obtained by annealing of high dose As-implanted GaAs layers. Beyond the good crystalline quality of both the clusters and the matrix, high tensile stresses within the precipitates have been originally deduced from the A1g and Eg mode frequency shifts. The results are well explained in terms of the difference between the thermal expansion coefficients of the two materials. The temperature dependence of the stresses corroborates this interpretation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113279
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  • 3
    Electronic Resource
    Electronic Resource
    Coupling of GaN- and AlN-like longitudinal optic phonons in Ga1−xAlxN solid solutions (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2674-2676 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Long-wavelength optical phonons of Ga1−xAlxN solid solutions have been identified in a wide compositional range by Raman spectroscopy. The A1 and E1 polar phonon frequencies evolve continuously with x from one-member crystal to the other. The same behavior seems to hold true for the silent B1 mode, which manifests itself by an interference with an unidentified continuum. Coupling of the longitudinal-optic (LO) modes associated with the two types of bonds, via the macroscopic electric field, is treated by a generalization of the dielectric model [D. T. Hon and W. L. Faust, J. Appl. Phys. 1, 241 (1973)]. This approach accounts for the observed frequencies and supports the apparent one-mode behavior of the polar LO phonons. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121095
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  • 4
    Electronic Resource
    Electronic Resource
    Phonons as probes in self-organized SiGe islands (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3856-3858 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show how optical phonons can be used as efficient probes in self-organized Si1−xGex islands grown on Si(001). Both the alloy composition and residual strain in the islands were originally determined from the phonon frequencies and Raman intensities. The experimental results are in good agreement with the strain relaxation simulated by means of the finite element method. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120525
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  • 5
    Electronic Resource
    Electronic Resource
    Strain in InAs islands grown on InP(001) analyzed by Raman spectroscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 943-945 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering has been used to investigate strained InAs islands grown on InP(001), in correlation with transmission electron microscopy. Symmetry arguments, selective resonance at the InAs E1-like transition and comparison with a single-quantum-well structure allowed to distinguish between the islands and remaining wetting layer signals. Whereas the vibrational modes of the 2D thin layers are greatly affected by interface roughness and confinement, strain effects mainly account for the phonon frequency shifts in the islands. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116951
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  • 6
    Electronic Resource
    Electronic Resource
    Localization of the 34 kDa polyhedron envelope protein inSpodoptera frugiperda cells infected withAutographa california nuclear polyhedrosis virus (1990)
    Springer
    Archives of virology 111 (1990), S. 103-114 
    Details
    ISSN: 1432-8798
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Using immuno-electron microscopy the 34 kDa polyhedron envelope (PE) phosphoprotein (pp 34) was localized in cells infected withAutographa californica multiple-nucleocapsid nuclear polyhedrosis virus (AcMNPV). In wild-type AcMNPV-infected cells this protein was found associated with electron-dense “spacers” and the polyhedron envelopes demonstrating their structural relationship. In these cells pp 34 was also found associated with fibrillar structures present in the nucleus and cytoplasm of infected cells. However, when cells were infected with an AcMNPV mutant with an inactivated pp 34 gene, antiserum against pp 34 still localized in fibrillar structures. In cells infected with AcMNPV mutants lacking p 10, and thus devoid of fibrillar structures, pp 34 localized normally with both electron-dense “spacers” and polyhedron envelopes. These data confirm that fibrillar structures are not essential for the morphogenesis of polyhedron envelopes and demonstrate that the association of anti pp 34 serum with these structures is specific but fortuitous.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01310508
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  • 7
    Electronic Resource
    Electronic Resource
    Integrated map of AFLP, SSLP and RFLP markers using a recombinant inbred population of rice (Oryza sativa L.) (1998)
    Springer
    Theoretical and applied genetics 97 (1998), S. 370-380 
    Details
    ISSN: 1432-2242
    Keywords: Key words Amplified fragment length polymorphism (AFLP) ; Simple-sequence length polymorphism (SSLP) ; Restriction fragment length polymorphism (RFLP) ; Rice (Oryza sativa L.) ; Molecular map
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  A molecular map of rice consisting of 231 amplified fragment length polymorphisms (AFLPs), 212 restriction fragment length polymorphisms (RFLPs), 86 simple-sequence length polymorphisms (SSLPs), five isozyme loci, and two morphological mutant loci [phenol staining of grain (Ph), semi-dwarf habit (sd-1)] has been constructed using an F11 recombinant inbred (RI) population. The mapping population consisted of 164 RI lines and was developed via single-seed descent from an intercross between the genetically divergent parents Milyang 23 (M) (tongil type) and Gihobyeo (G) ( japonica type). A subset of previously mapped RFLP and SSLP markers were used to construct the map framework. The AFLP markers were derived from ten EcoRI(+2) and MseI(+3) primer combinations. All marker types were well distributed throughout the 12 chromosomes. The integrated map covered 1814 cM, with an average interval size of 3.4 cM. The MG map is a cornerstone of the Korean Rice Genome Research Program (KRGRP) and is being continuously refined through the addition of partially sequenced cDNA markers derived from an immature-seed cDNA library developed in Korea, and microsatellite markers developed at Cornell. The population is also being used for quantitative trait locus (QTL) analysis and as the basis for marker-assisted variety development.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s001220050907
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