ISSN:
1432-0630
Keywords:
61.70 Tm
;
66.30 Lw
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The diffusion behaviour of implanted boron in silicon was investigated using the10B(n,α)7 Li nuclear reaction. An anomalous behavior with a strong reduction of the diffusivity above an effective solubility limit at 1.5×1019, 6×1019, and 1.1×1020 cm−3 was found for annealing temperatures of 800, 900, and 1,000°C, respectively.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00897929
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