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  • 1
    Electronic Resource
    Electronic Resource
    A versatile stable scanning proximal probe microscope (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 1759-1763 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a novel scanning proximal probe microscope design utilizing a piezoelectric driven coarse positioning mechanism in x, y, and z, while maintaining relatively small lateral dimensions. The instrument is suitable for insertion into a Dewar. The primary purpose of this work is to develop a stable yet versatile instrument in order to meet the signal averaging limitations imposed by low signal level measurements. We have implemented a near field scanning optical microscope with this system, whose key features include simultaneous detection of reflected and transmitted signals, unique "center of mass" tip oscillator for shear force feedback, and overall microscope stability. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147988
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  • 2
    Electronic Resource
    Electronic Resource
    Ballistic electron studies and modification of the Au/Si interface (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2826-2828 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Au/Si(111) interface has been investigated with ballistic electron emission microscopy. The Schottky barrier (SB) height and ballistic transmittance have been measured on interfaces which have been prepared with different types of monolayer-level dopants. Transmission rates but not the SB are found to depend strongly on the resulting degree of interdiffusion of the Au and Si at the interface. An irreversible modification in the transport properties of the buried interface can occur when the system is stressed with electrons injected at several volts above the Schottky barrier.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103754
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  • 3
    Electronic Resource
    Electronic Resource
    A structural and electrical comparison of thin SiO2 films grown on silicon by plasma anodization and rapid thermal processing to furnace oxidation (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5027-5035 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used capacitance-voltage (C-V) techniques and x-ray photoelectron spectroscopy (XPS) to study for the first time the electrical and structural properties of thin SiO2 films grown on silicon by plasma anodization and rapid thermal processes (RTO) and then compared them to furnace oxides. We have compared the SiO4 tetrahedral ring structure and the suboxide content of the ∼3-nm-thick interfacial region of these oxides and have found significant structural differences. By correlating these differences with measured electrical differences, we have identified the structural causes of some of the electrical characteristics of the plasma and RTO oxides. In plasma oxides we see larger amounts of silicon dangling bonds, Pb centers, at the Si-SiO2 interface and have identified these dangling bonds as the source of a localized peak of interface states found at 0.3 eV above the silicon valence band. Low-temperature rapid thermal annealing of the plasma oxides relieves localized compressive interfacial strain, apparently by allowing the completion of oxidation at the interface, and reduces the amount of dangling bonds. However, this strain relief simultaneously increases the average SiO4 ring structure at the interface. A larger interfacial SiO4 ring structure is also seen in rapid thermal oxides and has been attributed to the very rapid cooling which takes place at the end of the rapid thermal process. Post-growth thermal processing has been shown to reduce the average ring structure by relieving localized tensile interfacial stress, but this stress relief is accompanied by the appearance of a peak of interface states at about 0.8 eV above the valence band which is attributed to Si–O bonds broken during the anneal. Long furnace anneals of rapid thermal oxides remove these states and give interface state densities comparable to those of furnace oxides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340450
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  • 4
    Electronic Resource
    Electronic Resource
    Origins and effects of thermal processes on near-field optical probes (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2597-2599 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An aluminum-coated tapered fiber probe, as used in near-field scanning optical microscopy (NSOM), is heated by the light coupled into it. This can destroy the probe or may modify the sample, which can be problematic or used as a tool. To study these thermal effects, we couple modulated visible light of various power through probes. Simultaneously coupled infrared light senses the thermal effects. We report their magnitude, their spatial and temporal scales, and real-time probe damage observations. A model describes the experimental data, the mechanisms for induced IR variation, and their relative importance. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115143
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  • 5
    Electronic Resource
    Electronic Resource
    Raman imaging with near-field scanning optical microscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2483-2485 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy in conjunction with near-field scanning optical microscopy is used to image Rb-doped KTiOPO4 within a spectral feature with high spatial resolution. We present Raman spectra as well as the first Raman images obtained in the near field. Differences between near-field and far-field Raman measurements are discovered and discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114615
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  • 6
    Electronic Resource
    Electronic Resource
    Scanning Hall probe microscopy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1974-1976 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the implementation of a scanning Hall probe microscope of outstanding magnetic field sensitivity (∼0.1 G) and unprecedented spatial resolution (∼0.35 μm) to detect surface magnetic fields at close proximity to a sample. Our microscope combines the advantages of a submicron Hall probe fabricated on a GaAs/Al0.3Ga0.7As heterostructure chip and the scanning tunneling microscopy technique for precise positioning. We demonstrate its usefulness by imaging individual vortices in high Tc La1.85Sr0.15CuO4 films and superconducting networks, and magnetic bubble domains.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108334
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  • 7
    Electronic Resource
    Electronic Resource
    Optical imaging of carrier dynamics in silicon with subwavelength resolution (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1656-1658 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Characteristic rate variations of carrier processes are imaged using near-field scanning optical microscopy. We couple both a visible pump and an infrared probe light through a subwavelength aperture to investigate the interband recombination and intraband diffusion of excess carriers in oxidized silicon. Typical values of the locally measured life time constants agree well with those obtained by conventional space-averaged techniques. Moreover, the images locate defects, reveal variations, and can map the regions in which a recombination process is active. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118661
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  • 8
    Electronic Resource
    Electronic Resource
    Electromigration in YBa2Cu3O7−δ using a metal clad near-field scanning optical microscope probe (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2127-2129 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromigration or electron-induced-migration (EIM) of oxygen in the hightemperature superconductor YBa2Cu3O7−δ alters the superconducting properties through variations in the oxygen concentration. We study this process with unprecedented spatial resolution and find that the transport of oxygen through a grain boundary into a neighboring grain is unlikely, and that hot electron effects dominate the mechanism for EIM in this system. The extent of the EIM effects implies that grain boundary scattering is strong for these electrons. EIM is induced with the tunnel current from the metal cladding on a near-field optical microscope (NSOM). Variations in the oxygen concentration due to fabrication, aging, and electromigration are imaged optically and corroborated to the grain structure. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1314296
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  • 9
    Electronic Resource
    Electronic Resource
    Surface enhancement in near-field Raman spectroscopy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3911-3913 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intensity and selection rules of Raman spectra change as a metal surface approaches the sample. We study the distance dependence of the new Raman modes with a near-field scanning optical microscope (NSOM). The metal-coated NSOM probe provides localized illumination of a metal surface with good distance control. Spectra are measured as the probe approaches the surface, and the changes elucidated with difference spectra. Comparisons to a theoretical model for Raman excitation by evanescent light near the probe tip indicate that while the general trends are well described, the data show oscillations about the model. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126818
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