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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6066-6069 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nitridation of GaAs, InAs, and InSb by low-energy N2+ ion bombardment at room temperature was studied by near-edge x-ray absorption fine structure (NEXAFS) and x-ray photoelectron spectroscopy measurements. The formation of thin surface nitride layers, consisting mostly of GaN or InN but also containing minor amounts of mixed nitrides, was observed. Besides the nitride-related features, sharp peaks in the NEXAFS due to π* resonance at 401.0 eV and correlated peaks at 403.8 eV in N 1s core level spectra were detected. Both spectral features could be assigned to the presence of interstitial nitrogen, most likely molecular nitrogen. It was found that the amount of interstitial nitrogen in the surface layer strongly depends on the AIII–BV semiconductor system and may be affected by modification of the conditions during low energy ion bombardment. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 526-532 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ infrared (IR) spectroscopy and visible-light (VIS) spectroscopic ellipsometry over the spectral range from 700 to 2000 cm−1 and 1.5–3.5 eV, respectively, were used to investigate the optical behavior of boron nitride (BN) thin films at temperatures from room temperature (RT) to 600 °C. The polycrystalline hexagonal (h) and mixed-phase h- and cubic (c)-BN thin films were deposited by magnetron sputtering on [001] silicon. We observe a reversible moisture incorporation process in as-grown h-BN samples. When stored in normal ambient, the h-BN thin films absorb water into thin-film micropores. When annealed in ultrahigh vacuum or a dry nitrogen atmosphere, the samples expel moisture but retain their microstructure. This is observable by reduction of the thin-film refractive indices in accordance with changes in the IR lattice resonance behavior. The optical properties of high c-BN content thin films remain unchanged during annealing. And both intrinsic h- and c-BN thin-film VIS refractive indices are nearly temperature independent, at least up to 600 °C. Therefore, RT BN optical constants can be used for feedback loop control in in situ thin-film growth at temperatures up to 600 °C.
    Type of Medium: Electronic Resource
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