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  • 1
    Electronic Resource
    Electronic Resource
    Formation of interface layers in GaxIn1−xAs/InP heterostructures: A re-evaluation using ultrathin quantum wells as a probe (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1501-1510 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the metalorganic vapor phase epitaxy growth of ultrathin GaInAs/InP and GaAs/InP quantum well (QW) structures using photoluminescence (PL) spectra as a probe for interface effects. In parallel we have also studied InAsxP1−x "interface QWs'' formed by simply exposing InP to AsH3. We see a correlation between QW properties (PL peak position, effective thickness, PL half-width) and the surface phase during the growth of the QW material. For GaAs QWs grown under conditions where typically the As-excess c(4×4)/d(4×4)- or (1×2)-like (with As double layers) surface reconstructions, we find a strong red-shift of the PL peak positions. The red-shift becomes smaller the closer the growth conditions come toward the border to the (2×4) reconstruction (with only one As-termination layer). We thus conclude that the surface itself is one source for As carryover. For GaInAs QWs a boundary between an As-excess/no As-excess surface reconstruction seems to exist at higher AsH3/lower T values. Near to this border GaInAs QWs can be deposited which show PL-half-widths between 7 and 11 meV even for the range of 1–5 ML nominal thickness. The P/As replacement reaction at the lower interface is for short AsH3 interaction times (≤1 s) restricted to less than 1 ML and contributes a relatively constant amount to the effective thickness of the QW. Similarly, we show that InAsxP1−x interface QWs formed by short time interaction of InP and AsH3, originate less from a reaction into the depth of the InP, but more from a consumption of the As which is adsorbed onto the InP surface after the AsH3 treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356385
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  • 2
    Electronic Resource
    Electronic Resource
    Damage induced by plasma etching: On the correlation of results from photoluminescence and transport characterization techniques (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1403-1405 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma dry etching, used for the fabrication of low-dimensional structures, is known to create defects in the material which affect both the optical and the transport properties of the sample. We compare the results obtained from three different methods of characterizing the damage induced by electron cyclotron resonance metalorganic reactive ion etching to the two-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures: photoluminescence, transport measurements, and electron paramagnetic resonance. Etching impairs the quality of luminescence and decreases the single-particle relaxation time, while the concentration of a surface related paramagnetic defect (probably dangling bonds) is increased. However, detailed experiments show no correlation between the density of defects and transport or luminescence properties, nor between transport and luminescence properties. In particular, hydrogen passivation, which improves the luminescence properties after etching, leads to deteriorated transport properties. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113215
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  • 3
    Electronic Resource
    Electronic Resource
    Band filling at low optical power density in semiconductor dots (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1905-1907 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied band filling in strained InP dots grown on GaInP. Compared to quantum wells, the dots show band filling at two orders of magnitude lower optical excitation power density. We show that the emission attributed to band filling originates from the dots by using spatially resolved photoluminescence recording emission from single dots with very high spectral resolution. With time-resolved photoluminescence spectra we follow the dynamic relaxation of the charge carriers in the dots. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114372
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  • 4
    Electronic Resource
    Electronic Resource
    Excited states of individual quantum dots studied by photoluminescence spectroscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 749-751 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence from individual InP quantum dots embedded in a matrix of GaInP has been studied. In addition to the ground state emission that consists of several peaks, we observe excited states of the dot. These states are observed either via state filling or with photoluminescence excitation spectroscopy. We observe a fast relaxation to the set of states with lowest energy but no relaxation between these states. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117879
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  • 5
    Electronic Resource
    Electronic Resource
    Spectroscopic studies of ultra-thin quantum-wells of GaAs and GaInAs in InP grown by MOVPE
    Amsterdam : Elsevier
    Solid State Electronics 37 (1994), S. 899-904 
    Details
    ISSN: 0038-1101
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1101(94)90322-0
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