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  • 1
    Electronic Resource
    Electronic Resource
    Magnetic tunnel junctions with AlN and AlNxOy barriers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6871-6873 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonoxide tunnel barriers such as AlN are of interest for magnetic tunnel junctions to avoid the oxidation of the magnetic electrodes. We have investigated the fabrication and properties of thin AlN-based barriers for use in low resistance magnetic tunnel junctions. Electronic, magnetic and structural data of tunnel valves of the form Ta (100 Å)/PtMn (300 Å)/CoFe20 (20 Å–25 Å)/barrier/CoFe20 (10–20 Å)/NiFe16 (35–40 Å)/Ta (100 Å) are presented, where the barrier consists of AlN, AlNxOy or AlN/AlOx with total thicknesses between 8 and 15 Å. The tunnel junctions were sputter deposited and then lithographically patterned down to 2×2 μm2 devices. AlN was deposited by reactive sputtering from an Al target with 20%–35% N2 in the Ar sputter gas at room temperature, resulting in stoichiometric growth of AlNx (x=0.50±0.05), as determined by RBS. TEM analysis shows that the as-deposited AlN barrier is crystalline. For AlN barriers and AlN followed by natural O2 oxidation, we obtain tunnel magnetoresistance 〉10% with specific junction resistance Rj down to 60 Ωμm2. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1361046
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  • 2
    Electronic Resource
    Electronic Resource
    Low-resistance IrMn and PtMn tunnel valves for recording head applications (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7353-7355 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the use of ultrathin Al2O3 barriers to fabricate low-resistance tunnel-valve sensors suitable for recording heads. Tunnel valves of the type underlayer/(IrMn or PtMn)/CoFe/Al2O3/CoFe/NiFe/Cap layer have been fabricated by magnetron sputtering. Tunnel barriers are formed by Al metal deposition followed by in situ oxidation, and tunnel-junction test devices are built by photolithography with areas down to 1×1 μm2. Specific resistances as low as 13 Ω μm2 with 25% tunnel magnetoresistance have been obtained using Al thicknesses of 6–7 Å. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1361050
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  • 3
    Electronic Resource
    Electronic Resource
    Planarized growth of AlGaAs/GaAs heterostructures on patterned substrates by molecular beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2128-2130 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The profiles of AlGaAs/GaAs heterostructures grown by gas-source molecular beam epitaxy (GSMBE) on patterned substrates at different growth temperatures have been studied. It was found that at higher substrate temperature, the GSMBE growth results in Al clustering and the formation of high index planes. With a proper combination of low growth temperature and etched profile, a quasiplanarized surface is obtainable. A process simulation program is found to be capable of simulating the GSMBE growth profile at lower substrate temperature with reasonable accuracy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354739
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  • 4
    Electronic Resource
    Electronic Resource
    Determination of V/III ratios on phosphide surfaces during gas source molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 254-256 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phosphorus-controlled growth rate of homoepitaxial (100) InP, GaP, and AlP on GaP substrates by gas source molecular beam epitaxy was investigated. Elemental group-III sources and thermally cracked phosphine were used. The growth rate was monitored by the specular beam intensity oscillations of reflection high-energy electron diffraction. This technique gives exact values of V/III ratio on the surface by measuring the amount of phosphorus which is actually incorporated into the film. Here the V/III ratio is defined as P-controlled growth rate divided by group-III-controlled growth rate instead of the beam flux V/III ratio. Also the phosphorus surface desorption activation energies were measured to be 0.61 eV and in the range between 0.89 and 0.97 eV for InP and GaP, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104706
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  • 5
    Electronic Resource
    Electronic Resource
    Multichannel interactions in the resonant photoionization of HCl (1987)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 87 (1987), S. 6553-6558 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Vibrational state distributions of the A 2Σ+ excited state of HCl+ were measured by dispersed fluorescence following resonant photoionization. Autoionization of levels excited at the NeI resonance line strongly influence the vibrational branching ratios of the A 2Σ+ state although not in accord with the propensity rule expected for vibrational autoionization. Other measurements utilizing total fluorescence yields and synchrotron radiation confirm the presence of competing dissociation channels for autoionizing Rydberg states converging to the A 2Σ+ limit. These results are discussed in terms of the multichannel interactions responsible for determining the observed ion and fragment product distributions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.453439
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  • 6
    Electronic Resource
    Electronic Resource
    Highly stable biosensor using an artificial enzyme (1987)
    s.l. : American Chemical Society
    Analytical chemistry 59 (1987), S. 536-537 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00130a038
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  • 7
    Electronic Resource
    Electronic Resource
    Impact ionization coefficients in (100) GaInP (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3507-3509 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron and hole impact ionization coefficients in (100)Ga0.5In0.5P have been measured by photomultiplication measurements. The ratio of hole to electron ionization coefficients, β/α, is shown to decrease from 2 to 1 when the electric field is increased from 3.5×105 to 6.5×105 V/cm. As confirmation, breakdown voltages were measured for several p+−n−−n+ diodes with various concentrations in the n− region. The values observed showed good agreement with those calculated from the ionization coefficients. Typical breakdown voltages are on the order of 1.6 times higher than those expected for GaAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113779
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  • 8
    Electronic Resource
    Electronic Resource
    Quality Improvement of Mackerel Surimi with NADPH-Sulfite Reductase from Escherichia coli (2000)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 65 (2000), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: The application of NADPH-sulfite reductase, produced from Escherichia coli, on mackerel surimi was investigated. The activity of this reductase was very stable. There was about 70%, 80%, and 90% activity left even after 8–wk storage at 25 °C and 12–wk storage at 4 or -30 °C, respectively. Increase in mackerel-surimi gel properties containing reductase was consistent with the amounts of reactive sulfhydryl groups detected. SDS-PAGE indicated that NADPH-sulfite reductase could reconstitute myosin heavy-chain and increase soluble actomyosin. From the data obtained, E. coli NADPH-sulfite reductase effectively improved the gel properties of mackerel surimi.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.2000.tb10620.x
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  • 9
    Electronic Resource
    Electronic Resource
    Technical Approach to Simplify the Purification Method and Characterization of Microbial Transglutaminase Produced from Streptoverticillium ladakanum (2000)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 65 (2000), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: In order to fast and economically purify MTGase from Streptoverticillium ladakanum, a stepwise elution method was developed and compared with linear gradient elution method. MTGase was purified to electrophoretical homogeneity by using CM Sepharose CL-6B and Blue Sepharose Fast Flow chromatographies by linear gradient or stepwise methods. The recovery of MTGase by linear gradient and stepwise methods were 68.4% and 81.0%, respectively. The optimal temperature and pH were 40 °C and 5.5, respectively. It was stable at pH 5.0 to 7.0 and had a rate constant (KD) of 6.21 °o 10-5 min-1 for thermal inactivation at 45 °C. The purified MTGase was activated by K+ Na+, Ca2+, Mn2+, and Mg2+, not affected by Fe3+, EDTA, but inhibited by Cu2+, Zn2+, Hg2+, Ni2+, Co2+, Cd2+, PCMB, NEM, IAA, and PMSF. A simple stepwise method was developed for the purification of MTGase from S. ladakanum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.2000.tb15959.x
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  • 10
    Electronic Resource
    Electronic Resource
    Interferon for the Treatment of Infections (1987)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Medicine 38 (1987), S. 51-59 
    Details
    ISSN: 0066-4219
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.me.38.020187.000411
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