Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 3507-3509
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Electron and hole impact ionization coefficients in (100)Ga0.5In0.5P have been measured by photomultiplication measurements. The ratio of hole to electron ionization coefficients, β/α, is shown to decrease from 2 to 1 when the electric field is increased from 3.5×105 to 6.5×105 V/cm. As confirmation, breakdown voltages were measured for several p+−n−−n+ diodes with various concentrations in the n− region. The values observed showed good agreement with those calculated from the ionization coefficients. Typical breakdown voltages are on the order of 1.6 times higher than those expected for GaAs. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.113779
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