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  • 1
    Electronic Resource
    Electronic Resource
    Magnetic properties and microstructures of dense branching morphology observed in Bi/Al/Mn/SiO multilayers : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6118-6120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new type of domain structure observed in the annealed Bi/Al/Mn/SiO films is described. The domain is embedded into a round colony called dense branching morphology. Increasing ramified branches and conspicuous circular envelopes are two distinguished features of the colony. Magnetic measurement indicated that the branches of different contrasts were relevant to the different magnetization orientations in the films. It was also revealed that the Kerr rotation topography in high spatial resolution could exactly match the branch geometry on the morphology. Composition analyses showed that intensive diffusion and segregation of Bi atoms during the thermal annealing contributed a lot to the formation of the domain structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352720
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  • 2
    Electronic Resource
    Electronic Resource
    Lattice damage and atomic mixing induced by As++ implantation and thermal annealing in AlAs/GaAs multiple quantum-well structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4181-4189 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice damage and the nature of the atomic intermixing of Al and Ga induced by As++ implantation and thermal annealing in AlAs/GaAs multiple quantum-well structures were investigated. The photoluminescence spectra, which show multiple peaks after implantation and annealing, were analyzed based on the shifts of the excitonic peaks arising from quantum wells located at different depths. The depth profiles of intermixing were obtained using a procedure of successive layer-by-layer chemical etching followed by photoluminescence measurements. It is found that the atomic mixing is maximum near the sample surface and decreases monotonically with depth, suggesting that the profiles follow more closely the ion induced damage than the ion density. It is also observed that the radiation damage extends beyond 1 μm. Within 0.3 μm from the surface, the damage is relatively heavy and the atomic intermixing increases rapidly with ion dose. Beyond 0.3 μm, the degree of intermixing is only sensitive to the anneal temperature but not to the implantation dose. The results show that both direct collisions and interdiffusion are responsible for the atomic mixing. For the samples implanted with ion doses below 1014 cm−2 and annealed at 650 °C, the optical activation from radiation damage is appreciable. However, the interdiffusion becomes important only at temperatures near and above 800 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349142
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  • 3
    Electronic Resource
    Electronic Resource
    Spectroscopic ellipsometry studies of YBa2Cu3O7−δ deposited on SrTiO3 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8272-8276 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric function ε=ε1−iε2 of the YBa2Cu3O7−δ high-Tc superconducting films grown on (100) SrTiO3 (c-axis oriented) and (110) SrTiO3 (ab-oriented) substrate was measured by spectroscopic polarization modulation ellipsometry (SPME) and changes in film orientation were studied by comparing films of various thicknesses. The films deposited on SrTiO3 (100) substrates demonstrated an isotropic ε1 that changed with film thickness. It is observed that the decrease in the metallic dielectric behavior associated with the increase in the thickness of the films grown on (100) SrTiO3 substrates is mainly due to a change in the orientation of the films. The films deposited on SrTiO3 (110) showed anisotropic dielectric behavior when the plane of polarization is parallel and perpendicular to the c-axis of the film. These studies show that for this high-temperature superconductor with anisotropic dielectric behavior, SPME is a highly sensitive technique capable of measuring small changes in the film orientation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347435
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  • 4
    Electronic Resource
    Electronic Resource
    Synthesis of diamond powder in acetylene oxygen plasma (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1247-1251 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond particles 10–500 nm in diameter were produced by microwave-assisted combustion of acetylene in oxygen. Both premixed and diffusion flame configurations were investigated. A mixture of cubic and hexagonal polytypes of diamond were identified. Larger particle sizes were observed at lower reactor pressure and higher C to O atomic ratios. C to O atomic ratios between 0.83 and 1.0 produced crystalline diamond powder while other ratios produced graphite, soot, and amorphous carbon phases. Diamond formation was not observed when reaction pressures were above 150 Torr.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346725
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  • 5
    Electronic Resource
    Electronic Resource
    Enhanced hydrogen desorption from Si sites during low-temperature Si1−xGex growth by disilane and solid-Ge molecular beam epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6920-6922 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A phenomenological model is proposed to explain quantitatively the interesting compositional dependence on the Ge incorporation rate during low-temperature growth of Si1−xGex by disilane and solid-Ge molecular beam epitaxy, based on enhanced hydrogen desorption from Si sites due to the presence of Ge atoms. The hydrogen desorption rate constant for disilane on Si sites is fitted to an exponential function of Ge incorporation rate and a possible physical explanation is discussed. Simulated results are in excellent agreement with experimental data. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370106
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  • 6
    Electronic Resource
    Electronic Resource
    Use of a diode laser to measure the polarization of an optically pumped ensemble of He(2 3S) atoms (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1684-1685 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A simple technique is described for determining the polarization of He(2 3S) atoms contained in an active discharge or afterglow. The polarization (and alignment) is obtained by measuring the attenuation of a circularly polarized probe beam provided by a 1.083 μm laser diode whose output frequency is scanned to allow separate measurements on the 2 3S1→2 3P0, 2 3S1→2 3P1, and 2 3S1→2 3P2 transitions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146864
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  • 7
    Electronic Resource
    Electronic Resource
    A high current pulse generator for magnetizing thin magnetic films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3948-3950 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A bipolar, high-current (10 000 A) pulse generator, used to magnetically saturate thin films during spin-polarized electron and dynamic response measurements, is described. Bipolar operation is achieved by discharging a bank of capacitors through selected pairs of high-power silicon-controlled rectifiers connected to a coil in an H bridge configuration. The pulse generator can be controlled either manually or by means of a computer. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147296
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  • 8
    Electronic Resource
    Electronic Resource
    Erythema nodosum associated with carcinoid tumour (2004)
    Oxford, UK : Blackwell Science Ltd
    Clinical and experimental dermatology 29 (2004), S. 0 
    Details
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2230.2004.01544.x
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  • 9
    Electronic Resource
    Electronic Resource
    An efficient design to reduce the flux leakage of a spindle motor : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5557-5559 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A small dc brushless spindle motor with small magnetic flux leakage must be used for a CD-ROM drive application because the magnetic flux leakage may affect the magnetic and electric control circuit of the pickup head. This paper presents a motor design that efficiently reduces magnetic flux leakage by using a pair of yokes on the rotor magnet. Using these yokes at a distance of 2.0 mm reduced the magnetic flux leakage from 344 to 29 G along the radial direction and from 117 to 10 G along the axial direction. After shielding for the magnetic flux leakage, the dynamic performance of the motor cannot be affected. The torque of the CD-ROM spindle motor can be controlled at the same range for shielded and unshielded spindle motors. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362241
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  • 10
    Electronic Resource
    Electronic Resource
    A study on the Kerr angle enhancement by the magnetic image effect (abstract) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5699-5699 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently, new mechanisms have been proposed to explain the giant enhancements of M-O Kerr effect. In this work, we use magnetic image effect to explain the Kerr angle enhancement of M-O media on Co-base amorphous films. The M-O layer and reflection layer were produced by using conventional dc magnetron sputtering processes. The Kerr hysteresis loops of M-O films were measured with wavelength from 500 to 860 nm, and the peak applied field was 9 kOe. We have studied the enhancements of Kerr angle in TbFeCo amorphous film which sandwiched by AlN layers and backed with Co-base amorphous film. There is a remarkable increase of Kerr angle with value 1.85° at wavelength 640 nm. At wavelength 780 nm, the Kerr angle of magneto-optic medium on Co-base amorphous ribbon has been significantly enhanced by a factor of 3.1 as compared to that on Al foil. Because of its high permeability and low coercivity, the Co-base amorphous film serve as a magnetic shielding material which can induce the magnetic image effect for M-O film. Theoretical calculations show that the Kerr angle can be enhanced by the image magnetic field. The calculated values of Kerr angle are in good agreement with experiment results. An explicit equation to calculate the Kerr angle will be discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362221
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