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  • 1
    Electronic Resource
    Electronic Resource
    Electroreflectance study of Hg1−xMnxTe in the E1 and E1+Δ1 energy regions (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1135-1138 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report electrolyte electroreflectance studies of the ternary semimagnetic semiconductor Hg1−xMnxTe for compositions below x=0.2. The dependence of E1 and E1+Δ1 transition energies on the composition was determined on the basis of the low field approximation. The present results are compared and discussed in relation to experimental data obtained previously and the theoretical predictions reported in the literature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337357
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  • 2
    Electronic Resource
    Electronic Resource
    Electroreflectance studies above the fundamental gap on InxGa1−xAs layers deposited on GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 266-267 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interband transitions E1 and E1+Δ1 were investigated using the electrolyte electroreflectance technique for various compositions of InxGa1−xAs layers deposited on GaAs by molecular-beam epitaxy. A discrepancy in the results for layers deposited with lattice mismatch and bulk materials was noticed. The results were compared with the predictions of the scaled-virtual-crystal-approximation method for transition energy dependence on composition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336875
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of dc bias on electrolyte electroreflectance spectra (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 368-371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of a constant component of electric field (dc bias) across an electrolyte–semiconductor interface are studied and discussed. The change of bias causes variations in spectral features depending on the type of the semiconducting material and the position of a feature in relation to the interband transition energy. The phenomena are illustrated in experiments carried out on GaAs and HgMnTe. It is experimentally shown that dc bias in conjunction with the electrolyte electroreflectance technique can be used to determine the type of the material, to locate the flat-band potential, and to study the surface states. It has also been shown that dc bias can be used to determine low field conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337655
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  • 4
    Electronic Resource
    Electronic Resource
    Modulated reflectance study of strain in epitaxial GaAs on silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4862-4865 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrolyte electroreflectance technique was used to study the nature of the strain in epitaxial layers of GaAs grown by laser-assisted metalorganic chemical vapor deposition on (100) Si substrate. The GaAs epilayer, about 140 nm thick, was chemically etched in steps of about 20 nm and spectra of the differential reflectivity (ΔR/R) versus energy were recorded in the 2.4–4.0 eV region immediately following each etch procedure. The E1 and E1+Δ1 transitions of GaAs and their broadening parameters were calculated using the low-field analysis of the electrolyte electroreflectance line shapes. The uniformity of carriers and the effects of the etching procedure were studied with three-dimensional amplitude maps. The variations of the spectral characteristics are interpreted in terms of strains and electronic changes as one approaches the GaAs-Si interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343804
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  • 5
    Electronic Resource
    Electronic Resource
    Raman scattering by epitaxial GaAs on a Si substrate (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4946-4949 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain distribution and the lattice disorder of GaAs on a Si substrate were studied by Raman scattering technique as a function of distance from the GaAs/Si interface. Epitaxial layers of GaAs grown by the laser-assisted metalorganic chemical vapor deposition technique on a Si substrate were subjected to slow chemical etching in successive steps, and Raman spectra were observed after each etch procedure. The asymmetry of the longitudinal optical (LO) phonon peak and the ratio of the integrated intensity of LO phonon to that of the transverse optical phonon Raman peaks increase for successive chemical etching, and the LO-phonon peak shifts to lower energies. Our Raman results indicate changes in lattice stacking, disorder, and strain in the epilayer as a function of distance from the GaAs/Si interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343766
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  • 6
    Electronic Resource
    Electronic Resource
    Correlation of interference effects in photoreflectance spectra with GaAs homolayer thickness (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4656-4661 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped GaAs epilayers grown by metalorganic chemical vapor deposition on Zn- and Si-doped GaAs substrates were studied using the technique of photoreflectance (PR) spectroscopy. Oscillations were observed in the PR spectra of the samples grown on n-type substrates below the fundamental band gap of GaAs. The origin of these oscillations was investigated in terms of interference between the light beam reflected from the air/film interface and the modulated beam reflected from the film/substrate interface. The latter is due to the modulation of the index of refraction of the substrate. The thickness of each film was calculated by a model which was used to fit the experimental spectra of the differential change in reflectance (ΔR/R) versus energy. The observed changes in the period of these oscillations as a function of film thickness were in good agreement with the calculated results. Scanning electron microscope measurements of the thicknesses of the films supported these calculations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346176
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  • 7
    Electronic Resource
    Electronic Resource
    Lattice damage and atomic mixing induced by As++ implantation and thermal annealing in AlAs/GaAs multiple quantum-well structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4181-4189 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice damage and the nature of the atomic intermixing of Al and Ga induced by As++ implantation and thermal annealing in AlAs/GaAs multiple quantum-well structures were investigated. The photoluminescence spectra, which show multiple peaks after implantation and annealing, were analyzed based on the shifts of the excitonic peaks arising from quantum wells located at different depths. The depth profiles of intermixing were obtained using a procedure of successive layer-by-layer chemical etching followed by photoluminescence measurements. It is found that the atomic mixing is maximum near the sample surface and decreases monotonically with depth, suggesting that the profiles follow more closely the ion induced damage than the ion density. It is also observed that the radiation damage extends beyond 1 μm. Within 0.3 μm from the surface, the damage is relatively heavy and the atomic intermixing increases rapidly with ion dose. Beyond 0.3 μm, the degree of intermixing is only sensitive to the anneal temperature but not to the implantation dose. The results show that both direct collisions and interdiffusion are responsible for the atomic mixing. For the samples implanted with ion doses below 1014 cm−2 and annealed at 650 °C, the optical activation from radiation damage is appreciable. However, the interdiffusion becomes important only at temperatures near and above 800 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349142
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  • 8
    Electronic Resource
    Electronic Resource
    Spectroscopic ellipsometry studies of YBa2Cu3O7−δ deposited on SrTiO3 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8272-8276 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric function ε=ε1−iε2 of the YBa2Cu3O7−δ high-Tc superconducting films grown on (100) SrTiO3 (c-axis oriented) and (110) SrTiO3 (ab-oriented) substrate was measured by spectroscopic polarization modulation ellipsometry (SPME) and changes in film orientation were studied by comparing films of various thicknesses. The films deposited on SrTiO3 (100) substrates demonstrated an isotropic ε1 that changed with film thickness. It is observed that the decrease in the metallic dielectric behavior associated with the increase in the thickness of the films grown on (100) SrTiO3 substrates is mainly due to a change in the orientation of the films. The films deposited on SrTiO3 (110) showed anisotropic dielectric behavior when the plane of polarization is parallel and perpendicular to the c-axis of the film. These studies show that for this high-temperature superconductor with anisotropic dielectric behavior, SPME is a highly sensitive technique capable of measuring small changes in the film orientation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347435
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  • 9
    Electronic Resource
    Electronic Resource
    Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3601-3606 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrolyte electroreflectance (EER) experiments were performed on In0.22Ga0.78As/GaAs single quantum wells grown by the conventional molecular-beam-epitaxy (MBE) shutter operation, and also by modified MBE shutter operation intended to form more compositionally abrupt normal and inverted interfaces. The latter included controlled thermal desorption of the surface segregated In at the InGaAs layer surface (flash off), and the deposition of In at the InGaAs/GaAs interface to eliminate compositional broadening (predeposition). The fundamental energy gap and subband transitions were determined experimentally, and compared with an accurate calculation of the potential well problem including strain. These results confirmed the segregation of In atoms near the interface. The segregation was maximum in the conventional (normal) MBE sample and least with the modified growth incorporating predeposition and flash off, as expected. The segregated atoms are observed to act as dopants and form junctions near the InGaAs/GaAs interface. This study shows that EER can be used as an effective tool for studying the segregation process in MBE growth. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365476
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  • 10
    Electronic Resource
    Electronic Resource
    Automatic topographic examination of semiconductors using modulated reflectance (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 268-272 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A modified cell design for studies of electrolyte electroreflectance of solids is reported. A new type of electrolyte cell design for ensuring easy and proper contacts with the surface of the sample wafer is described. The modified system is shown to be suitable for fast and convenient acquisition and display of spectra, or the variation of composition or carrier concentration as a function of position on the sample. Typical results for GaAs:Si and MBE-grown Ga1−xAlxAs/GaAs samples are shown.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138342
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