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  • 1
    Electronic Resource
    Electronic Resource
    Influence of thin protective InAs layers on the optical quality of AlGaAs and quantum wells (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2449-2452 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Influence of a thin protective but subsequently evaporated InAs layer on the regrowth of AlGaAs has been studied. It was found that although most of the InAs could be evaporated by thermal desorption, some would react with Al0.36Ga0.64As to form InAlGaAs. These InAlGaAs islands act as potential wells for carrier recombination and dominate the photoluminescence spectrum. Transmission electron microscopy photographs show that dislocations are formed near the islands. These defects are caused by lattice mismatch between AlGaAs and InAlGaAs. These islands and defects strongly affect the optical quality of surrounding Al0.36Ga0.64As and quantum wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351590
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  • 2
    Electronic Resource
    Electronic Resource
    Instability in surface emitting lasers due to external optical feedback (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 16-20 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Instability in the output of dc-biased surface emitting lasers due to an external cavity effect was observed. The output power spectrum exhibited multiple peaks with spacing corresponding to exactly the round-trip delay in silica fibers with length ranging from 2 m to 2 km. The magnitude of the peaks was enhanced in the spectral region centered at the laser relaxation frequency. With increased feedback, the background of the output spectrum was found to increase, indicating the presence of optical chaos. Numerical simulation based on the rate equation analysis was found to agree with the experiment, indicating the surface emitting lasers are well described by the rate equation and are susceptible to feedback as the edge emitting lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353880
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  • 3
    Electronic Resource
    Electronic Resource
    Argonne National Laboratory X6B beamline at NSLS: A versatile facility : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1688-1690 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: With high-intensity, high-energy resolution, energy tunability, and flexibility of operation, the Argonne National Laboratory X6B beamline at the National Synchrotron Light Source (NSLS) has become a versatile facility for a variety of x-ray diffraction, scattering, and spectroscopy experiments. The beamline can be operated in either focused or unfocused beam mode, depending on the requirement of specific experiments. We describe the x-ray optics and beamline performance, and present selected experimental results to demonstrate the main features of the X6B beamline. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145884
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  • 4
    Electronic Resource
    Electronic Resource
    InAsSbBi alloys grown by organometallic vapor-phase epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2857-2863 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A major remaining challenge for III/V semiconductor materials is the development of materials for photonic devices operating in the infrared region of the spectrum. Atmospheric transmission windows exist in the wavelength ranges from 2 to 4.5 and from 8.5 to 12 μm. Thus, emitters and, particularly, detectors operating in these wavelength ranges are important for many applications. Materials for devices operating in the longer-wavelength 8–12 μm region have typically not been III/V semiconductors because the lowest-band-gap conventional III/V alloy is InAsSb, with a 77 K band gap of 0.145 eV, corresponding to a wavelength of 8.5 μm. Previous work has shown that the addition of Bi to InAsSb alloys grown by organometallic vapor-phase epitaxy results in a rapid reduction in the band-gap energy. However, very low temperatures were required to obtained significant levels of Bi incorporation into the solid, due to the immiscibility of Bi in InAsSb. The low growth temperatures result in high carbon contamination levels using conventional precursors. Clearly, new precursors are required for low-temperature growth of these alloys without excessive levels of carbon contamination. New results for the organometallic vapor-phase-epitaxy growth of InAs1−x−ySbxBiy alloys are presented using the novel precursors tertiarybutylarsine, tertiarybutyldimethyl-antimony, and ethyldimethylindium. Alloys have been studied over the entire range of Sb/As ratios in the solid. For growth at 350 °C, the maximum Bi concentration yielding layers without the presence of a liquid second phase was found to be highest for x=0 (y=0.045) and lowest for x=0.7 (y=0.015). These levels of Bi incorporation yield calculated 77 K band gaps of 0.08 eV for the alloy with x=0.5 and y=0.015. These layers have several orders of magnitude lower levels of carbon contamination than reported previously.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356179
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  • 5
    Electronic Resource
    Electronic Resource
    Direct current and microwave characterization of integrated resonant tunneling diodes (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6616-6625 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an integrated device fabrication sequence for GaAs/AlGaAs resonant tunneling diodes and the results of dc and microwave characterization of the integrated devices. The development of an integrated structure represents a first step toward monolithic or hybrid integration for applications such as oscillators in the 100 GHz–1 THz range. The use of a proton implant in addition to a mesa etch for device isolation allows low parasitic capacitance connections to bond pads, interconnects, or radiating elements. The dc and microwave measurement procedures and an equivalent circuit topology for the integrated device are described. Several features associated with the integrated geometry, including a decrease in peak current density with increasing device diameter, are observed in a study of the current-voltage characteristics of devices with various diameters. Contact resistances are determined from a physically based model and compared with experimental results. Microwave characterization techniques are used to obtain microwave equivalent circuit parameters for the integrated diodes. Device capacitance and conductance are presented as functions of device dimension and bias voltage. Parasitic circuit elements, including series resistance and a capacitance and resistance associated with the proton bombardment used to define the mesa, are also determined from the microwave analysis. The results obtained from microwave impedance measurements are compared with parameters obtained from dc characterization and numerical simulations of comparable device structures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360483
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  • 6
    Electronic Resource
    Electronic Resource
    Temperature dependence of Fermi level obtained by electroreflectance spectroscopy of undoped n+-type doped GaAs (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3889-3891 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electroreflectance (ER) spectra of an undoped n+-type doped GaAs have been measured over a range of temperature from 25 to 400 K. Many Franz–Keldysh oscillations were observed above the band-gap energy, which enabled the electric field strength and, hence, also the Fermi level to be determined. The photovoltaic effect is shown to be negligible, even at the low temperature. The experiment shows that the Fermi level decreases with increasing temperature and has almost the same temperature dependence as the energy gap. It is pinned at about 0.63 of energy gap below the conduction band. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120535
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  • 7
    Electronic Resource
    Electronic Resource
    Improvements in the organometallic heteroepitaxy of indium phosphide directly on silicon (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 236-238 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Specular single-crystal InP epilayers have been grown directly on Si(100) substrates by low-pressure organometallic vapor phase epitaxy. The effects of the initial nucleation process on the structure properties of the films were investigated, and improvements in the growth technique leading to higher quality InP films are reported. The InP/Si epilayer grown under optimum conditions exhibits high optical quality compared with that of the InP homoepilayer. Post-growth thermal annealing at 780 °C was also confirmed to be effective in improving the overall quality of InP-on-Si. The results presented are superior to those reported previously for InP/Si heteroepitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101017
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  • 8
    Electronic Resource
    Electronic Resource
    Optical studies of InxGa1−xAs/GaAs strained-layer quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2026-2028 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intense single-peak photoluminescences of free-exciton origin were observed in InxGa1−x As/GaAs strained-layer quantum wells with x ranging from 0.09 to 0.20. Band lineups in these strained-layer heterostructures were determined by the dependence of luminescence energy on the well thickness. The heterojunction discontinuity in the heavy hole valence bands was found to be about 30% of the gap difference and independent of x. Exciton-phonon coupling was determined by temperature-dependent absorption measurements and the coupling strength was found to be similar to that of unstrained GaAs/AlxGa1−x As quantum wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101181
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  • 9
    Electronic Resource
    Electronic Resource
    Characterization of InP/GaAs epilayers grown on Si substrates by low-pressure organometallic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 880-882 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial growth of InP on Si with an intermediate GaAs buffer layer by low-pressure organometallic vapor phase epitaxy is reported. Excellent crystallinity of InP epilayers with specular surfaces can be reproducibly obtained. The carrier concentration profile shows that the carrier distribution in the InP layer is very uniform, while an apparent reduction in concentration occurs at the InP/GaAs interface. The 77 K photoluminescence (PL) of the InP layer exhibits a strong near-band-edge emission. No evident shift in PL peak energy for the InP/GaAs/Si sample compared with that for the InP homoepitaxial sample was first observed in this study. These results are superior to those reported previously for the InP/Si heteroepitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99260
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  • 10
    Electronic Resource
    Electronic Resource
    Interface structure and lattice mismatch of epitaxial CoSi2 on Si(111) (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1176-1178 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used the x-ray standing-wave technique and bulk x-ray diffraction to investigate the structural properties of thin CoSi2 layers grown epitaxially on Si(111). The perpendicular lattice mismatch with respect to the Si substrate was found to be −0.0152±0.0003 and −0.016±0.001 for 6-nm-thick and 16-nm-thick layers, respectively. The distance between Si(111) and the first Co layer was measured to be (0.288±0.005) nm and is thus stretched by (0.014±0.005) nm compared with a value determined by Si-like bulk bond length. The Co atoms are attached to the Si(111) dangling bonds in agreement with the model of fivefold coordinated metal atoms at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98724
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