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  • 1
    Electronic Resource
    Electronic Resource
    Formation of device-grade epitaxial silicon films at extremely low temperatures by low-energy bias sputtering (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4756-4766 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Device-grade epitaxial single silicon layers have been formed at extremely low temperatures of about 300 °C by low-energy bias sputtering in conjunction with in situ substrate surface cleaning and an ultraclean processing environment. Dopant impurities in the target material are fully incorporated into the sputter-deposited silicon film and these impurities are 100% electrically activated without any additional heat cycles. An epitaxial silicon film having a resistivity as low as 0.0014 Ω cm has been obtained using a heavily arsenic-doped silicon block as a target material. A p-n junction diode formed by directly depositing a phosphorus-doped n-type epilayer on a p-type substrate indicates a reverse current level as low as 1.88×10−9 A/cm2 at a reverse bias voltage of 5 V, thus verifying that the in situ substrate surface cleaning by low-energy Ar ion bombardment is very effective and damage free. The electrical characteristics of a grown film have shown a good correlation to the crystal structure of the film, which is primarily determined by the energy of ions concurrently bombarding the growing film surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343786
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  • 2
    Electronic Resource
    Electronic Resource
    In situ substrate-surface cleaning for very low temperature silicon epitaxy by low-kinetic-energy particle bombardment (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 45-47 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A very low temperature in situ substrate-surface cleaning process utilizing low-kinetic-energy particle bombardment has been developed. Dramatic improvements have been achieved in the crystallinity of epitaxial silicon films grown by the newly developed low-kinetic-energy particle process, in which argon ions having precisely controlled energies are continuously bombarding the film surface during the entire growth operation. With the optimized substrate-surface cleaning conditions, in which the contaminants on the surface of silicon substrates are removed without introducing any damages to the substrates, the epitaxial silicon layer with a perfect crystallinity has been obtained at such very low temperatures below 350 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100121
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  • 3
    Electronic Resource
    Electronic Resource
    Crystal structure analysis of epitaxial silicon films formed by a low kinetic energy particle process (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 523-525 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Formation of high quality epitaxial silicon films at 350 °C by a low kinetic energy particle process has been verified by a series of crystal structure analyses performed on these films. It was found that the crystallinity of a grown film is drastically changed by the energy of Ar ions concurrently bombarding the growing silicon film surface. The epitaxially grown film with an optimum ion bombardment energy is defect-free both at the interface and in the bulk of the film as revealed by high-resolution transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100919
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  • 4
    Electronic Resource
    Electronic Resource
    Low-temperature silicon epitaxy by low-energy bias sputtering (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 364-366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bias sputtering at low energies, i.e., comparable to typical crystal interatomic binding energies, has been utilized to control the kinetics of thin-film growth. It was found that the crystallographic structures of sputter-deposited silicon films are drastically changed by the energy of ions incident at the substrate. As a result, formation of high quality epitaxial silicon films on (100) silicon substrates has been realized at such low temperatures as 320–350 °C. At the same time, low-temperature impurity doping of the epitaxial layer has been also demonstrated. Furthermore, the low-energy bias sputtering process has made it possible to perform very effective substrate surface cleaning at extremely low temperatures without introducing any damage to the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99914
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  • 5
    Electronic Resource
    Electronic Resource
    Manipulation of nucleation sites and periods over amorphous substrates (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1231-1233 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A selective nucleation based crystal growth technique over amorphous substrates is originated. The method manipulates nucleation sites and periods, and hence, controls the grain boundary location by modifying the substrate surface. In Si, Si3 N4 provides artificial nucleation sites, 1–2 μm in diameter, 100 μ m in period, which is surrounded by SiO2 . One Si nucleus is formed exclusively in a small portion of Si3 N4 . The highly faceted and periodically located nuclei grow over SiO2 up to 100 μm in diameter before impingement. A field-effect transistor fabricated inside the island operates comparably to the bulk Si control.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99675
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  • 6
    Electronic Resource
    Electronic Resource
    Correspondence (2001)
    Oxford, UK : Blackwell Science Ltd
    Histopathology 38 (2001), S. 0 
    Details
    ISSN: 1365-2559
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2559.2001.01051-2.x
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  • 7
    Electronic Resource
    Electronic Resource
    Flexural strength of rebased denture polymers (2000)
    Oxford, UK : Blackwell Science Ltd
    Journal of oral rehabilitation 27 (2000), S. 0 
    Details
    ISSN: 1365-2842
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The properties of denture base and reline resins may be affected by daily changes between room temperature and mouth temperature. The purpose of the study was to evaluate the effect of thermocycling on the flexural strength of the relined denture base polymer with reline resin. Three denture base resins, three hard reline resins and their combinations were tested. Fourteen specimens, 65×10×2·5 mm, were fabricated for each material. Polymer combination specimens were made using 1·5 mm hard reline resin on 1·0 mm cured denture base resins. Half of the specimens were stored for 50±2 h in distilled water at 37 °C, while the other half were thermocycled for 20 000 cycles between 4 and 60 °C. Three point bending tests were conducted on a universal testing machine at a cross-head speed of 0·5 cm/s. The flexural strengths were measured and a statistical analysis was performed on the data using three-way anova (P〈0·05). The results showed that the flexural strength of relined denture base polymer was significantly higher than that of hard reline polymer. Thermocycling did not affect the flexural strength of the relined denture base polymers, whereas the denture base polymer and reline polymer alone showed a decrease in strength after thermocycling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2842.2000.00552.x
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  • 8
    Electronic Resource
    Electronic Resource
    Influence of lining design of three processed soft denture liners on cushioning effect (1999)
    Oxford, UK : Blackwell Science Ltd
    Journal of oral rehabilitation 26 (1999), S. 0 
    Details
    ISSN: 1365-2842
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The purpose of this study was to evaluate the influence of the lining design of a soft denture liner on its cushioning effect, using a free drop test and an accelerometer. The peak instantaneous acceleration value was computed. The materials tested were SuperSoft® (SS), Kurepeet-Dough® (KD), and Molloplast-B® (MB). Soft denture liners 2 mm in thickness were placed in test denture bases using three different configurations. Specimens were tested at 24 h and at 180 days after storage in distilled water at 37 °C. A three-way anova was used to analyse the data (P=0·05) and Tukey intervals were computed. It was found that all three materials were effective in reducing the impact force. The lining design that had the soft denture liner extended to the periphery of the denture base demonstrated the greatest shock absorbability of all the tested designs. A silicone denture liner using lining design 1 was the most effective in reducing the shock transmitted to the denture bases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2842.1999.00467.x
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  • 9
    Electronic Resource
    Electronic Resource
    Primary structures of multiple forms of urotensin II in the urophysis of the carp, Cyprinus carpio
    Amsterdam : Elsevier
    General and Comparative Endocrinology 55 (1984), S. 133-141 
    Details
    ISSN: 0016-6480
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0016-6480(84)90137-0
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  • 10
    Electronic Resource
    Electronic Resource
    Distribution of mucus glycoprotein in four compartments of lamb and sheep stomach
    Amsterdam : Elsevier
    Comparative Biochemistry and Physiology -- Part B: Biochemistry and 82 (1985), S. 419-423 
    Details
    ISSN: 0305-0491
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0305-0491(85)90003-3
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