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  • 1
    Electronic Resource
    Electronic Resource
    USA/Oxford, UK : Blackwell Science Ltd
    Cephalalgia 11 (1991), S. 0 
    ISSN: 1468-2982
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: A preliminary study was undertaken to provide clinical evidence to support the hypothesis that: “Migraine with aura, migraine without aura and aura alone are the same condition, which differ in degree rather than pathophysiology.” At the City of London Migraine Clinic, 50 patients consecutively attending the clinic with a past or present history of migraine with aura were questioned. Of the 50 patients questioned 36 (70%) had a combination of migraine with aura, migraine without aura andor aura alone; i.e. 70% had had more than one type of migraine attack. The duration, severity and frequency of attacks did not differ between migraine with and migraine without aura. Conclusion-the results support the hypothesis that migraine with and migraine without aura, and aura alone are not separate conditions, because: (1) most patients suffer from more than one type of migraine attack; (2) there are no significant differences in the characteristics of the migraine attacks in the different groups; (3) there are no significant differences in the characteristics of the subjects.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1292-1295 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Preferentially oriented epitaxial Y-Ba-Cu-O films were prepared on (100) SrTiO3 substrates by oxygen reactive ion beam sputtering. The epitaxial orientations were varied by controlling both substrate temperature and oxygen parital pressure. c-axis oriented films tended to be formed at higher substrate temperatures (〉620 °C) and lower oxygen pressures (〈3×10−3 Torr). In contrast, a/c- and a-axis oriented films were formed at lower substrate temperatures (〈600 °C) and higher oxygen pressures (〉3×10−3 Torr). The best Tc (end) of 82 K was observed in one of the c-axis oriented film without post-annealing. The tendency for preferential orientation can be well understood in terms of the lattice mismatch between the substrate and the film, the lattice constants of which depend on oxygen deficiency.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5689-5693 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper describes a vectorial finite element method for the analysis of electromagnetic waves propagating in helical systems. The present method can be as easily used as the methods for guided electromagnetic waves in systems with translational and axial symmetries. The functional for the vector Helmholtz equation is minimized using twisted coordinates in which the problem becomes two-dimensional. The spurious solutions, which do not satisfy the divergence-free condition, are removed on the basis of the penalty method. Two finite element equations for the covariant and contravariant components of electromagnetic fields are derived and boundary conditions for both formulations are described. The present method is applied to the analysis of a twisted waveguide with a rectangular cross section and the numerical solutions are shown to be in good agreement with the perturbed solutions for a small helical pitch.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2455-2457 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By introducing an epitaxial Cr(00l) buffer layer, single-crystal Fe(001)/Cr(001) superlattices having extremely flat interfaces were grown on MgO(001) substrates by molecular beam epitaxy. Sharp reflection high-energy electron diffraction patterns and low resistivity at 5 K show that the Fe/Cr superlattice has the highest quality of the interfaces among those so far reported. Results indicate that the interface roughness influences the magnitude of both residual resistivity and magnetoresistance.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1787-1790 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on an investigation of Co/Al multilayered films (MLFs). The samples had periodic layered structures and had in-plane easy axes. Nonmagnetic CoAl compound was formed at the Co/Al interfaces. Co/Al MLFs had a perpendicular interface anisotropy. This interface anisotropy energy (Ks) was estimated to be 0.25 erg/cm2. Taking account the volume contribution of Co layers, it was suggested that perpendicular magnetism would appear when the remaining unmixed Co layer thickness was under 6 A(ring). However, this surface anisotropy energy vanished when the Co layers were thinner than 9 A(ring). In Co/Al MLFs with thin Co layers, the island growth of Co on the initial stage was considered to be the reason for Ks=0.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4164-4166 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new hard magnet alloy, (Fe40Co40Mn20)98.6−xCxSi1.4(x∼ 0.4) was developed. The alloy permits heavy cold-working wherein optimum magnetic properties can be obtained by a suitable heat-treatment after the cold-working, that is, bHc=54.9–63.7 kA/m, Br=0.24–0.47 T, and (BH)max=5.6–11.2 kJ/m3. The alloy retains its high temperature fcc form (nonmagnetic phase) by a quenching, whereas a cold-working produces a small volume of ferromagnetic phase which is transformed in a martensitic style. Heat-treatment at about 400–600 °C causes a bcc phase precipitation, resulting in a fine lamella mixture of magnetic and nonmagnetic phases.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4795-4799 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Continuous ribbons of Ti-Zr-B ternary alloys, consisting of early transition metal and metalloid elements, were formed by a single-roller melt-spinning method. Details of the quenching method employing a modified levitation melting technique are herein described. Amorphous phases were obtained in the composition range of 15 at. %≤B≤25 at. % and 20 at. %≤Zr≤50 at. %. The crystallization of the amorphous alloy took place in two steps. Initially, the amorphous phase changed polymorphously into a boron supersaturated bcc-like phase, and then this bcc-like phase decomposed into a bcc phase and a (Ti, Zr)B compound phase. The crystallization temperature was extraordinarily low (∼320 °C) in contrast to the high melting point and the strong chemical bonding between the metal and metalloid elements.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 396-400 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-roller rapid quenching apparatus with a plasma-arc torch and a water-cooled copper hearth has been developed for the rapid quenching of high melting temperature alloys (mp〉2000 °C). Details of the apparatus and a mathematical analysis of thermal conditions during the quenching process are described together with the results obtained from high melting temperature alloy experiments. Amorphous ribbons were obtained from Nb80Si20, Nb3Ge, and Ta–(Si,B) alloys. Amorphous Nb3Ge ribbon was successfully converted into an A15 single phase by heat treatment, and showed a superconducting transition temperature as high as 18.3 K. Crystallization of Ta80Si10B10 amorphous ribbon was observed at a very high temperature of 1233 K.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 575-577 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of the Bi2(Sr,Ca)3Cu2Ox and YBa2Cu3O7−δ system were annealed at 400 °C in a high-density oxygen plasma and its effect on superconducting properties was investigated. After being annealed in the oxygen plasma, their superconducting transition temperatures decreased by about 10 K and 2 K, respectively, and the c-axis lattice constants of these films were also found to decrease as a result of the annealing in the oxygen plasma. These results suggest that excessive oxygen incorporated into the films by the annealing in the oxygen plasma caused the excessive hole carriers, which deteriorated the superconducting transition temperatures of these films.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2364-2366 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial film growth of artificial (Bi-O)/(Sr-Ca-Cu-O) layered structures on MgO substrates was carried out using reactive-oxygen-gas dual ion beam sputtering and shuttering technique. A 12 A(ring) Sr-Ca-Cu-O buffer layer seems suitable for perfect epitaxial film growth. Single-phase films having periodicities of 12, 15, and 18 A(ring) (which correspond to bulk 24, 30, and 36 A(ring) phases in Bi oxide superconductors) were selectively grown by adjusting the thickness of a Sr-Ca-Cu-O layer sandwiched by Bi-O bi-planes. A high Tc phase film with a total thickness of about 300 A(ring) showed an onset Tc of 110 K and a zero resistivity temperature of 45 K without post-deposition annealing. The shuttering technique seems to enable the layer-by-layer film growth, and it is very effective for the formation of smooth and perfect epitaxial structures.
    Type of Medium: Electronic Resource
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