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  • 1
    Electronic Resource
    Electronic Resource
    A vectorial finite element formulation for electromagnetic wave propagation in helical systems (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5689-5693 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper describes a vectorial finite element method for the analysis of electromagnetic waves propagating in helical systems. The present method can be as easily used as the methods for guided electromagnetic waves in systems with translational and axial symmetries. The functional for the vector Helmholtz equation is minimized using twisted coordinates in which the problem becomes two-dimensional. The spurious solutions, which do not satisfy the divergence-free condition, are removed on the basis of the penalty method. Two finite element equations for the covariant and contravariant components of electromagnetic fields are derived and boundary conditions for both formulations are described. The present method is applied to the analysis of a twisted waveguide with a rectangular cross section and the numerical solutions are shown to be in good agreement with the perturbed solutions for a small helical pitch.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350503
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  • 2
    Electronic Resource
    Electronic Resource
    Growth of epitaxial Fe/Cr superlattices having extremely flat interfaces (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2455-2457 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By introducing an epitaxial Cr(00l) buffer layer, single-crystal Fe(001)/Cr(001) superlattices having extremely flat interfaces were grown on MgO(001) substrates by molecular beam epitaxy. Sharp reflection high-energy electron diffraction patterns and low resistivity at 5 K show that the Fe/Cr superlattice has the highest quality of the interfaces among those so far reported. Results indicate that the interface roughness influences the magnitude of both residual resistivity and magnetoresistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351110
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  • 3
    Electronic Resource
    Electronic Resource
    Structure and magnetic properties of Co/Al multilayered films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1787-1790 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on an investigation of Co/Al multilayered films (MLFs). The samples had periodic layered structures and had in-plane easy axes. Nonmagnetic CoAl compound was formed at the Co/Al interfaces. Co/Al MLFs had a perpendicular interface anisotropy. This interface anisotropy energy (Ks) was estimated to be 0.25 erg/cm2. Taking account the volume contribution of Co layers, it was suggested that perpendicular magnetism would appear when the remaining unmixed Co layer thickness was under 6 A(ring). However, this surface anisotropy energy vanished when the Co layers were thinner than 9 A(ring). In Co/Al MLFs with thin Co layers, the island growth of Co on the initial stage was considered to be the reason for Ks=0.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346610
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  • 4
    Electronic Resource
    Electronic Resource
    Epitaxial growth study of Bi2(Sr,Ca)3Cu2Ox films on cleaved MgO substrates (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1092-1094 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ epitaxial growth of Bi2(Sr0.6Ca0.4)3Cu2Ox films by ion beam sputtering on cleaved MgO substrates was studied. The crystallographic structures were analyzed by in situ reflection high-energy electron diffraction, a four-circle x-ray diffractometer, and a scanning electron microscope. While the epitaxial films on polished MgO substrates commonly showed the fourfold symmetry, epitaxial films having twofold symmetry were grown on cleaved MgO substrates and the films contained two types of equivalently misoriented domains. The epitaxial relationship between these domains and cleaved MgO substrates was such that the b axis of each domain deviated approximately ±13° from [010]MgO where the cleavage steps ran along [100]MgO. The step edges seemed to play an important role in the occurrence of the twofold epitaxial relationship, where the incommensurate modulation tended to align its direction so as to avoid the step edges.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104381
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of oxygen plasma annealing on superconducting properties of Bi2(Sr,Ca)3Cu2Ox and YBa2Cu3O7−δ thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 575-577 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of the Bi2(Sr,Ca)3Cu2Ox and YBa2Cu3O7−δ system were annealed at 400 °C in a high-density oxygen plasma and its effect on superconducting properties was investigated. After being annealed in the oxygen plasma, their superconducting transition temperatures decreased by about 10 K and 2 K, respectively, and the c-axis lattice constants of these films were also found to decrease as a result of the annealing in the oxygen plasma. These results suggest that excessive oxygen incorporated into the films by the annealing in the oxygen plasma caused the excessive hole carriers, which deteriorated the superconducting transition temperatures of these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103302
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  • 6
    Electronic Resource
    Electronic Resource
    Preparation of Bi-Sr-Ca-Cu-O thin film by coevaporation and its thermal stability (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 572-574 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin film with a high Tc single phase was prepared on a (100)MgO substrate at a substrate temperature of about 620 °C by coevaporation of Bi2O3, Sr, Ca, and Cu metal. The resistive superconducting transition with onset Tc of 80 K was observed for this film. By post-deposition annealing at 850 °C, the high Tc phase was transformed into a low Tc phase, while films annealed at a higher temperature such as 890 °C maintained the high Tc phase. These results indicated that the high Tc phase can exist only at the high-temperature region (∼890 °C) while the stable phase existing at the low-temperature region (∼850 °C) is the low Tc phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101460
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  • 7
    Electronic Resource
    Electronic Resource
    Composition dependence of superconducting properties in Bi2(Sr1−xCax)n+1CunOy (n=2, 3) thin films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1213-1215 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of the Bi2(Sr1−xCax)n+1CunOy (n=2, 3) system were prepared on (100)MgO substrates by coevaporation of Bi2O3, Sr-Ca alloy, and Cu metal. The lattice constant of the c axis of the low Tc (∼85 K) phase (n=2) decreased with increasing Ca composition x. The superconducting transition temperatures of both the low Tc phase and high Tc (∼110 K) phase (n=3) decreased with increasing x. These tendencies indicated that both the low Tc phase and the high Tc phase have a mutual solubility between Ca and Sr atoms in this Bi system and that the Tc 's of these two phases are related to the c-axis lattice constant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100668
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  • 8
    Electronic Resource
    Electronic Resource
    As-grown superconducting Bi-Sr-Ca-Cu-O thin films by coevaporation (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 702-704 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting Bi-Sr-Ca-Cu-O thin films have been prepared on (100) MgO substrates at about 600 °C by coevaporation. The c-axis lattice constant of this system was controlled to the values of 24–43 A(ring) by changing film composition. Superconducting transition temperatures of these films were affected by substrate temperature and by a post-deposition annealing at a low temperature. The highest zero resistance temperature (Tc, zero) of the as-grown Bi2(Sr,Ca)3Cu2Ox film was 79 K. The best Bi2(Sr, Ca)4Cu3Ox film showed an onset temperature of 105 K and Tc, zero zero of 78 K after annealing at 400 °C for 1 h.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101574
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial film growths of artificial (Bi-O)/(Sr-Ca-Cu-O) layered structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2364-2366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial film growth of artificial (Bi-O)/(Sr-Ca-Cu-O) layered structures on MgO substrates was carried out using reactive-oxygen-gas dual ion beam sputtering and shuttering technique. A 12 A(ring) Sr-Ca-Cu-O buffer layer seems suitable for perfect epitaxial film growth. Single-phase films having periodicities of 12, 15, and 18 A(ring) (which correspond to bulk 24, 30, and 36 A(ring) phases in Bi oxide superconductors) were selectively grown by adjusting the thickness of a Sr-Ca-Cu-O layer sandwiched by Bi-O bi-planes. A high Tc phase film with a total thickness of about 300 A(ring) showed an onset Tc of 110 K and a zero resistivity temperature of 45 K without post-deposition annealing. The shuttering technique seems to enable the layer-by-layer film growth, and it is very effective for the formation of smooth and perfect epitaxial structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101529
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  • 10
    Electronic Resource
    Electronic Resource
    In situ epitaxial growth of Bi2(Sr,Ca)3Cu2Ox films by ion beam sputtering with an atomic oxygen source (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 295-297 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ epitaxial growth of Bi2(Sr,Ca)3Cu2Ox films was performed by ion beam sputtering in atomic oxygen ambience at the substrate temperature of 640 °C. The films showed an epitaxial growth in which the a and b axes were parallel to 〈100〉 MgO, and the superstructure according to the incommensurate modulation along the b axis was also observed. The superconducting properties of the as-grown films seemed to sensitively depend on the oxidation treatment during the cooling down process. The zero resistivity temperature Tc(R=0) of a 600-A(ring)-thick film cooled down in the same atomic oxygen density as the film growth ambience was 60 K, but it increased up to 80 K after a post-deposition annealing at 500 °C for 1 h in air. In contrast, as-grown films cooled down in insufficient oxidation ambience showed the Tc(R=0) of 76 K without post-deposition annealing. The control of the oxygen concentration is critical for the superconductivity of as-grown films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103286
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